Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: In some embodiments, a method may include preparing building forms including at least some cementitious materials. The method for preparing forms may include mixing substantially dry cementitious material particles with closed cell foam particles to form a substantially dry composition. In some embodiment, at least some of the cementitious material particles may adhere to at least some surface deformations on the surface of the closed cell foam particles. In some embodiments, the method may include mixing a second portion of water with the substantially dry composition for a second period of time to form a partially wet composition. In some embodiments, a method may include forming a building form including at least some cementitious materials from the partially wet composition. In some embodiments, the closed cell foam particles may include expanded polystyrene. In some embodiments, a ratio of the water to cementitious material particles may range from 0.20 to 0.40.

Abstract: A single layer complementary memory cell includes a conductive base layer, a memristive matrix layer disposed onto the base layer, the memristive matrix comprising distinct memristive devices formed within. The memory cell further includes conductive lines disposed onto the memristive matrix that connect to the distinct memristive devices such that the distinct memristive devices form a mutually complementary relation to each other.

Abstract: A three-device non-volatile memory cell includes a first resistive device, a second resistive device connected to the first resistive device in a mutual complementary manner, and a third resistive device connected to both said first resistive device and said second resistive device in a mutual complementary manner. A memory array includes a set of read lines intersecting a set of bit lines, a set of program lines intersecting said bit lines, memory cells disposed at intersections between the intersecting set of bit lines. Each of the memory cells includes a program resistive device connected to one of the program lines, a read resistive device connected to one of the read lines, and a bit resistive device connected to one of the bit lines and connected to the program device and the read device in a mutual complementary manner.

Abstract: A single layer complementary memory cell includes a conductive base layer, a memristive matrix layer disposed onto the base layer, the memristive matrix comprising distinct memristive devices formed within. The memory cell further includes conductive lines disposed onto the memristive matrix that connect to the distinct memristive devices such that the distinct memristive devices form a mutually complementary relation to each other.

Abstract: A three-device non-volatile memory cell includes a first resistive device, a second resistive device connected to the first resistive device in a mutual complementary manner, and a third resistive device connected to both said first resistive device and said second resistive device in a mutual complementary manner. A memory array includes a set of read lines intersecting a set of bit lines, a set of program lines intersecting said bit lines, memory cells disposed at intersections between the intersecting set of bit lines. Each of the memory cells includes a program resistive device connected to one of the program lines, a read resistive device connected to one of the read lines, and a bit resistive device connected to one of the bit lines and connected to the program device and the read device in a mutual complementary manner.

Abstract: An active pixel sensor including low threshold voltage transistors advantageously provides an increased output swing over an active pixel sensor of the prior art. The low threshold voltage transistor can be achieved using either a native transistor or a depletion mode transistor. In a process in which a threshold adjustment implant step is separately masked, the active pixel sensor of the present invention can be manufactured with no additional masking requirements. In one embodiment, a low threshold voltage (VTN) allows a transistor acting as a reset switch to operate in the linear region, and allowing the reset switch transistor to share a common supply voltage source with a readout amplifier transistor.

Abstract: The high Q inductor process for reducing substrate interaction of integrated inductors includes etching away some of the silicon substrate after the inductor has been formed on the substrate. A first etch process is performed to form an opening in the center of the inductor exposing the silicon substrate. A second etch process is performed to etch the exposed silicon substrate to form a trench in the silicon substrate. A third etch process is performed to etch the trench into an inverted pyramidal cavity within the substrate and extending beneath the inductor. The pyramidal cavity is then filled with a solution, such as spin-on-glass thereby providing mechanical support for the inductor.

Abstract: An active pixel sensor including low threshold voltage transistors advantageously provides an increased output swing over an active pixel sensor of the prior art. The low threshold voltage transistor can be achieved using either a native transistor or a depletion mode transistor. In a process in which a threshold adjustment implant step is separately masked, the active pixel sensor of the present invention can be manufactured with no additional masking requirements. In one embodiment, a low threshold voltage (VTN) allows a transistor acting as a reset switch to operate in the linear region, and allowing the reset switch transistor to share a common supply voltage source with a readout amplifier transistor.

Abstract: In a SOI structure according to the invention, a substrate region directly adjacent and underlying the buried oxide layer is doped with a dopant having a conductivity type opposite that of the substrate. This produces a junction between the doped layer and the substrate. Appropriately biasing this junction creates a depletion layer, which effectively extends the width of the buried oxide layer deep into the substrate, thereby reducing parasitic capacitance in the SOI structure, particularly for inductors, interconnects, and other passive circuit elements. Reducing parasitic capacitance reduces associated substrate losses and RC propagation delays. These benefits become increasingly important at high frequencies encountered in RF wireless communication and high speed digital applications.