Patents by Inventor Tsung-Wen Lee

Tsung-Wen Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010010353
    Abstract: An active pixel sensor including low threshold voltage transistors advantageously provides an increased output swing over an active pixel sensor of the prior art. The low threshold voltage transistor can be achieved using either a native transistor or a depletion mode transistor. In a process in which a threshold adjustment implant step is separately masked, the active pixel sensor of the present invention can be manufactured with no additional masking requirements. In one embodiment, a low threshold voltage (VTN) allows a transistor acting as a reset switch to operate in the linear region, and allowing the reset switch transistor to share a common supply voltage source with a readout amplifier transistor.
    Type: Application
    Filed: March 20, 2001
    Publication date: August 2, 2001
    Inventors: Richard B. Merrill, Tsung-Wen Lee
  • Patent number: 6265248
    Abstract: In a SOI structure according to the invention, a substrate region directly adjacent and underlying the buried oxide layer is doped with a dopant having a conductivity type opposite that of the substrate. This produces a junction between the doped layer and the substrate. Appropriately biasing this junction creates a depletion layer, which effectively extends the width of the buried oxide layer deep into the substrate, thereby reducing parasitic capacitance in the SOI structure, particularly for inductors, interconnects, and other passive circuit elements. Reducing parasitic capacitance reduces associated substrate losses and RC propagation delays. These benefits become increasingly important at high frequencies encountered in RF wireless communication and high speed digital applications.
    Type: Grant
    Filed: May 7, 1999
    Date of Patent: July 24, 2001
    Assignee: National Semiconductor Corporation
    Inventors: Johan Darmawan, Christian Olgaard, Tsung Wen Lee
  • Patent number: 6242728
    Abstract: An active pixel sensor including low threshold voltage transistors advantageously provides an increased output swing over an active pixel sensor of the prior art. The low threshold voltage transistor can be achieved using either a native transistor or a depletion mode transistor. In a process in which a threshold adjustment implant step is separately masked, the active pixel sensor of the present invention can be manufactured with no additional masking requirements. In one embodiment, a low threshold voltage (VTN) allows a transistor acting as a reset switch to operate in the linear region, and allowing the reset switch transistor to share a common supply voltage source with a readout amplifier transistor.
    Type: Grant
    Filed: August 20, 1998
    Date of Patent: June 5, 2001
    Assignee: Foveon, Inc.
    Inventors: Richard B. Merrill, Tsung-Wen Lee
  • Patent number: 5994759
    Abstract: In a SOI structure according to the invention, a substrate region directly adjacent and underlying the buried oxide layer is doped with a dopant having a conductivity type opposite that of the substrate. This produces a junction between the doped layer and the substrate. Appropriately biasing this junction creates a depletion layer, which effectively extends the width of the buried oxide layer deep into the substrate, thereby reducing parasitic capacitance in the SOI structure, particularly for inductors, interconnects, and other passive circuit elements. Reducing parasitic capacitance reduces associated substrate losses and RC propagation delays. These benefits become increasingly important at high frequencies encountered in RF wireless communication and high speed digital applications.
    Type: Grant
    Filed: November 6, 1998
    Date of Patent: November 30, 1999
    Assignee: National Semiconductor Corporation
    Inventors: Johan Darmawan, Christian Olgaard, Tsung Wen Lee