Abstract: A method of storing data in a multi-level charge-trapping memory array is described. An incidence-of-occurrence (i.e., frequency) analysis is performed on data to be programmed to identify data words combining a high programming voltage with a high frequency of occurrence. Those words are reassigned in order to reduce programming time.

Abstract: A method of efficiently programming charge-trapping memory cells includes sense amplifiers being dynamically connected to cells to be programmed, by switching bit lines. The method increases a number of cells that can be programmed simultaneously, such that an optimal use of sense amplifier resources is obtained.

Abstract: A memory apparatus and a method thereof for operating a memory are provided herein. The apparatus has the memory and a controller. The memory has a plurality of memory cells, and each the memory cells has a first side and the second side. Each of the first side and the second side is programmable to store one bit of data. The controller programs the first sides and the second sides of the memory cells to different levels. Several threshold voltage distributions of the programmed memory cells could be overlapped with each other. The controller distinguishes the bits of the memory cells by comparing the threshold voltages of the memory cells with the different levels and by comparing the threshold voltages with those of neighbor sides.

Abstract: Methods are disclosed to compensate for a second-bit effect during programming and reading of charge-trapping memory cells having left and right data regions. When only one of the left and right data regions is to be programmed, a two-step programming procedure is performed on the data region to be programmed. When the memory cell is to be read, threshold voltages for the left and right data regions are sensed with a joint decision regarding left and right data bit values being reached depending upon both sensed threshold voltage values.

Abstract: A method and apparatus are described that efficiently program charge-trapping memory cells by dynamically switching sense amplifiers and corresponding drivers depending upon data to be programmed. When a number of sense amplifier/drivers can be operated simultaneously, cells to be programmed to a same level are selected and programmed simultaneously employing up to the number of simultaneously operable sense amplifier/drivers.

Abstract: A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell current corresponding to the first and the second bits respectively with a voltage applying on the memory cell. The control unit determines a digital state of the first bit by comparing a first reference current with the first cell current or by comparing a reference data with a first delta current between the first cell current and the second cell current.

Abstract: With the present invention, buses and silicon IPs are simulated together. A virtual platform is provided for designing hardware and system. And correct and fast simulations of I/Os are provided through the I/Os on a FPGA. Thus, software performances are monitored and system bottlenecks are acquired.

Abstract: The invention provides a method for reading a first data storage of a memory cell. The method comprises sensing a first current of the memory cell by applying a first bit line voltage on the memory cell. When the first current is larger than a first reference current with respect to the first bit line voltage, the first data storage is determined to be at an un-programmed state. Otherwise, a second current of the memory cell is sensed by applying a second bit line voltage on the memory cell. When the difference between the first current and the second current is larger than the difference between the first reference current and the second reference current, the first data storage is determined to be at the un-programmed state.

Abstract: A memory apparatus and a method thereof for operating a memory are provided herein. The apparatus has the memory and a controller. The memory has a plurality of memory cells, and each the memory cells has a first side and the second side. Each of the first side and the second side is programmable to store one bit of data. The controller programs the first sides and the second sides of the memory cells to different levels. Several threshold voltage distributions of the programmed memory cells could be overlapped with each other. The controller distinguishes the bits of the memory cells by comparing the threshold voltages of the memory cells with the different levels and by comparing the threshold voltages with those of neighbor sides.

Abstract: A ground-plane slotted type signal transmission circuit board is proposed, which is designed for use with a high-speed digital signal processing system for providing a low-loss signal transmission function. The proposed circuit board structure is characterized by the formation of a slotted structure (i.e., elongated cutaway portion) in the ground plane at the beneath of each signal line. Since the slotted structure is a void portion, the electric field of a gigahertz signal being transmitting through the overlaying signal line would be unable to induce electric currents in the void portion of the ground plane. This feature allows the prevention of a leakage current that would otherwise flow from the signal line to the ground plane, and therefore can help prevent unnecessary power loss of the transmitted signal.

Abstract: A method of fabricating a mask ROM is provided, gate dielectric and a plurality of first conductive strips are sequentially formed over a substrate. A first dielectric layer is formed over the substrate and the first conductive strips. The first dielectric layer is patterned to form a plurality of first coding openings. Each first coding opening exposes the first conductive layer. A plurality of first wells is formed in the first conductive layer at the bottom of the first coding openings. A plurality of second conductive strips is formed over the first dielectric layer and inside the first coding openings to connect electrically with corresponding first wells and form a diode memory cell array. Additional diode memory cell arrays may stack over the diode memory cell array to increase device integration.

Abstract: A method of fabricating a mask ROM is provided. gate dielectric and a plurality of first conductive strips are sequentially formed over a substrate. A first dielectric layer is formed over the substrate and the first conductive strips. The first dielectric layer is patterned to form a plurality of first coding openings. Each first coding opening exposes the first conductive layer. A plurality of first wells is formed in the first conductive layer at the bottom of the first coding openings. A plurality of second conductive strips is formed over the first dielectric layer and inside the first coding openings to connect electrically with corresponding first wells and form a diode memory cell array. Additional diode memory cell arrays may stack over the diode memory cell array to increase device integration.