Abstract: A light emitting device includes a substrate, a light emitting chip, a first electrode, and a second electrode. The light emitting chip includes a first and a second semiconductor layers. The first semiconductor layer is disposed on the substrate. The second semiconductor layer is stacked on the first semiconductor layer and forms a light emitting junction with the first semiconductor layer. The first electrode connects to the first semiconductor layer and the second electrode connects to the second semiconductor layer. The light emitting device may further include a transparent layer that is disposed on the substrate and surrounds and contacts the lateral of the light emitting chip. A refraction index of the transparent layer is between a refraction index of the light emitting chip and that of a vacuum. The first electrode may penetrate the second semiconductor layer to connect to the first semiconductor.

Abstract: A light emitting diode includes a semiconductor structure, a first electrode, a second electrode, and an extending electrode. The semiconductor structure has at least one sidewall and includes a light emitting layer, a first semiconductor layer, and a second semiconductor layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer of the semiconductor structure. The first semiconductor layer is disposed between the light emitting layer and the first electrode. The second electrode is electrically connected to the second semiconductor layer of the semiconductor structure. The second semiconductor layer is disposed between the light emitting layer and the second electrode. The extending electrode is disposed on the sidewall of the semiconductor structure and is electrically connected to the second electrode.

Abstract: A micro-light-emitting diode device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer. The second semiconductor layer and the active layer have an interface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-light-emitting diode device. A distance between the light-exiting surface and the interface decreases from a central axis of the second semiconductor layer to an edge of the second semiconductor layer, so as to provide a focusing effect for the light by the light-exiting surface.

Abstract: A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer includes a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer disposed on the active layer includes a second bottom surface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-LED device. The second semiconductor layer has different thicknesses, in which a minimum thickness of the second semiconductor layer is located at an edge or at least one side of the second semiconductor layer. Vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface are substantially the same.

Abstract: A light emitting device includes a substrate, a light emitting chip, a first electrode, and a second electrode. The light emitting chip includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The second semiconductor layer is stacked on the first semiconductor layer and forms a light emitting junction with the first semiconductor layer. The first electrode connects to the first semiconductor layer and is isolated from the second semiconductor layer. The second electrode connects to the second semiconductor layer and is isolated from the first electrode. The light emitting device may further include a transparent layer that is disposed on the substrate and surrounds and contacts the lateral of the light emitting chip. A refraction index of the transparent layer is between a refraction index of the light emitting chip and that of a vacuum.

Abstract: A method for transferring micro devices is provided. The method includes the following operations: providing a carrier substrate and forming micro devices on the carrier substrate; forming a fixing layer on the carrier substrate, in which the fixing layer is at least in contact with bottom parts of the micro devices; patterning the fixing layer to selectively expose a portion of the micro devices; providing a transfer device correspondingly located on the carrier substrate, and picking up the exposed micro devices by the transfer device; and providing a receiving substrate and transferring the exposed micro devices to the receiving substrate.

Abstract: A method for transferring micro devices is provided. The method includes the following operations: providing a carrier substrate and forming micro devices on the carrier substrate; forming a fixing layer on the carrier substrate, in which the fixing layer is at least in contact with bottom parts of the micro devices; patterning the fixing layer to selectively expose a portion of the micro devices; providing a transfer device correspondingly located on the carrier substrate, and picking up the exposed micro devices by the transfer device; and providing a receiving substrate and transferring the exposed micro devices to the receiving substrate.

Abstract: A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer includes a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer disposed on the active layer includes a second bottom surface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-LED device. The second semiconductor layer has different thicknesses, in which a minimum thickness of the second semiconductor layer is located at an edge or at least one side of the second semiconductor layer. Vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface are substantially the same.

Abstract: A pixel structure includes a plurality of sub-pixels. Each of the sub-pixels includes a first light-emitting diode (LED) and a second LED. The first LED is configured to emit a first color light. The second LED is configured to emit a second color light. Each of the first LED and the second LED includes an anode and a cathode. The anode of the first LED and the anode of the second LED are coupled to a same signal line. The cathode of the first LED and the cathode of the second LED are coupled to different signal lines.

Abstract: An electronic device and a back cover thereof are provided. The electronic device comprises a body and the back cover. The back cover includes a near field communication chip, a controller, an antenna and a first security terminal. The body includes a security chip and a second security terminal. The controller is coupled to a first security terminal, and the controller is coupled to an antenna via the NFC chip. The controller is communicated with a body of the electronic device via the first security terminal.

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes an opaque layer or a black light filter layer in conjunction with an opaque layer, covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer and the black light filter layer where the light blocking portion is desired, but not over the active section. The method also provides for forming microlenses over the photosensors in the active section.

Abstract: An electrophoresis display apparatus includes an electronic-ink layer, a passive-matrix substrate, and a conducting layer. The passive-matrix substrate has an electrode surface, and the electrode surface has a plurality of electrodes. The conducting layer has a predetermined shape. The conducting layer is disposed between the electronic-ink layer and the electrode surface of the passive-matrix substrate and is used for transmitting the signals on the electrodes contacting the conducting layer to the electronic-ink layer, so that the electronic-ink layer can display an image with the predetermined shape.

Abstract: An electronic device includes a first component, a second component and a combining unit. The first component is disposed correspondingly to the second component, and the combining unit is disposed between the first component and the second component so as to combine the first component with the second component. The combining unit includes a plurality of spacing structures. The spacing structures are used to define an accommodation space between the first component and the second component. Each of the spacing structures has a first end and a second end opposite to the first end. A width of the first end is wider than a width of the second end.

Abstract: An electronic device with speakerphone and microphone is provided. The electronic device comprises a housing, a sound input unit, a sound output unit, an audio signal receiving terminal, an acoustic processing unit, a signal line and a sealing member. The housing has a microphone shell, a speaker shell and a soundproof structure. The soundproof structure is connected between the microphone shell and the speaker shell. The soundproof structure has a line output hole. The acoustic processing unit connects the sound input unit and the audio signal receiving terminal respectively to receive and mix two audio signals so as to generate an audio output signal. The audio output signal is transmitted to the sound output unit through a signal line. The sealing member is disposed around the line output hole and seals the line output hole.

Abstract: A mobile device is disclosed. The mobile device includes a display, a touch panel, and a buffer structure. The touch panel is disposed on one side of the display. The buffer structure has a gas fluid layer and is disposed between the display and the touch panel.

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes an opaque layer or a black light filter layer in conjunction with an opaque layer, covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer and the black light filter layer where the light blocking portion is desired, but not over the active section. The method also provides for forming microlenses over the photosensors in the active section.

Abstract: A touch panel and a method of manufacturing the same are disclosed in this invention. The touch panel is with a central induction region and a peripheral region, and at least includes an upper electrode portion having an upper substrate located in the central induction region and the peripheral region, a first signal induction layer located in the central induction region and the peripheral region, and a first circuit layer located in the peripheral region only. The first signal induction layer covers the upper substrate in the central induction region. The first circuit layer is sandwiched between the upper substrate and the first signal induction layer, and electrically connected the first signal induction layer.

Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes an opaque layer or a black light filter layer in conjunction with an opaque layer, covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer and the black light filter layer where the light blocking portion is desired, but not over the active section. The method also provides for forming microlenses over the photosensors in the active section.

Abstract: A touch display panel module includes a display panel module, a touch panel module, and a combining unit. The display panel module is for displaying images, and the display panel module has a first side, a second side opposite to the first side and a plurality of lateral sides between the first side and the second side. The touch panel module is disposed on the first side of the display panel module for sensing touch input. The combining unit includes an anti-permeation tape and an optical adhesive layer. The anti-permeation tape continuously covers on at least one of edges around the first side of the display panel module. The optical adhesive layer is formed between the display panel module and the touch panel module for combining the display panel module and the touch panel module.

Abstract: A patient lift and transfer device includes a base with casters for moving on a ground surface, a mast extending upwardly from the base, a carriage guided to slide along the mast by a mechanical linear drive assembly and having a forwardly extending beam, and a resting module for a patient to sit or lie thereon. The resting module is detachably connected to the beam to be suspended from the ground surface, and is raised or lowered with the carriage so as to lift and transfer the patient in a safe and comfortable manner.