Abstract: A temple is provided for a spectacle frame without nose pads. The temple comprises an elongate body, and a supporting part. The body has a first end and a second end. The first end is configured to be connected to a front without nose pads. The second end is configured to be mounted on a ear of a wearer. The supporting part is connected to the body, and configured to be mounted a zygomatic region of the wearer. The body has an elongate through hole extending along a longitudinal direction of the body near the second end. Levitation of the second end above the ear of the wearer being prevented by penetration of hair of the wearer through the through hole.

Abstract: An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.

Abstract: A temple is provided for a spectacle frame without nose pads. The temple comprises an elongate body, and a supporting part. The body has a first end and a second end. The first end is configured to be connected to a front without nose pads. The second end is configured to be mounted on a ear of a wearer. The supporting part is connected to the body, and configured to be mounted a zygomatic region of the wearer. The body has an elongate through hole extending along a longitudinal direction of the body near the second end. Levitation of the second end above the ear of the wearer being prevented by penetration of hair of the wearer through the through hole.

Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.

Abstract: An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.

Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.

Abstract: An electronic component includes: a substrate; a functional portion provided on the substrate; an interconnection line provided on the substrate and electrically connected to the functional portion; a metal wall provided on the substrate so as to surround the functional portion and the interconnection line; and a seal portion that contacts the metal wall and covers the functional portion and the interconnection line so as to define a cavity above the functional portion, the seal portion being made of liquid crystal polymer.

Abstract: A method for manufacturing an acoustic wave device includes: adhering wafer-shaped first and second piezoelectric substrates to a front face of a first and second adhesive sheet respectively and dividing the first and the second piezoelectric substrates into rectangles; adhering a third and fourth adhesive sheet to the first and second piezoelectric substrates respectively and moving at least one divided portions of the first and second piezoelectric substrates selectively to the third and fourth adhesive sheet respectively; moving the first piezoelectric substrate on the first adhesive sheet to the fourth adhesive sheet; and moving the second piezoelectric substrate on the second adhesive sheet to the third adhesive sheet.

Abstract: An electronic component includes: an element that is located on a substrate; a signal wiring that is located on the substrate and electrically connected to the element; a metal plate that is located so as to form a cavity on a functional part of the element and covers an upper surface of the cavity; a support post that is located on the substrate so as not to be located on the signal wiring, and supports the metal plate; and an insulating portion that covers the metal plate and the support post, and contacts a side surface of the cavity.

Abstract: A method for manufacturing an acoustic wave device includes: adhering wafer-shaped first and second piezoelectric substrates to a front face of a first and second adhesive sheet respectively and dividing the first and the second piezoelectric substrates into rectangles; adhering a third and fourth adhesive sheet to the first and second piezoelectric substrates respectively and moving at least one divided portions of the first and second piezoelectric substrates selectively to the third and fourth adhesive sheet respectively; moving the first piezoelectric substrate on the first adhesive sheet to the fourth adhesive sheet; and moving the second piezoelectric substrate on the second adhesive sheet to the third adhesive sheet.

Abstract: The present invention provides an eyeglass frame without nose pads that can adapt to difference in face size and can exert sufficient fixation force. A nose pad-less eyeglass frame 1 that is not provided with nose pads, wherein supporting members 3 for fixing an eyeglass frame to a face are attached on temples 2, and the supporting members 3 are movable in longitudinal directions of the temples 2 so that the positions of the supporting members 3 are adjustable.

Abstract: An electronic component includes: a substrate; a functional portion provided on the substrate; an interconnection line provided on the substrate and electrically connected to the functional portion; a metal wall provided on the substrate so as to surround the functional portion and the interconnection line; and a seal portion that contacts the metal wall and covers the functional portion and the interconnection line so as to define a cavity above the functional portion, the seal portion being made of liquid polymer.

Abstract: The present invention provides an eyeglass frame without nose pads that can adapt to difference in face size and can exert sufficient fixation force. [Solving Means] A nose-pad-less eyeglass frame 1 that is not provided with nose pads, wherein supporting members 3 for fixing an eyeglass frame to a face are attached on temples 2, and the supporting members 3 are movable in longitudinal directions of the temples so that the positions of the supporting members 3 are adjustable.

Abstract: A resonator includes a piezoelectric thin-film provided on a main surface of a substrate, a first electrode film provided on a first surface of the piezoelectric thin-film, a second electrode film provided on a second surface of the piezoelectric thin-film, a frequency adjustment film provided on one of the first and second electrode films, the frequency adjustment film comprising a film laminate including a first adjustment film provided on said one of the first and second electrode films, and a second adjustment film provided on the first adjustment film. The first adjustment film is used for ?f adjustment, and the second adjustment film is used for correcting frequency deviations generated in the filter manufacturing process. Thus, it is possible to accurately control the center frequency of the filter in which the multiple resonators are connected.

Abstract: A duplexer includes: first and second filters including film bulk acoustic resonators (FBARs) arranged in a ladder form; first and second integrated-passive devices (IPDs) provided between a common terminal and the first and second filters; and a substrate on which the first and second filters and the first and second IPDs are mounted. The substrate includes conductive patterns that realize inductances connected between the first and second filters and ground. The first and second IPDs includes inductors connected to the first and second filters.

Abstract: The present invention provides the stress detection method for force sensor device with multiple axis sensor device and force sensor device employing this method, whose installation angle is arbitrary. The stress detection method includes, first and second force sensors whose detection axes are orthogonal to each other. When the detection axis of first force sensor forms angle ? with direction of detected stress Ax, and the stress component of direction perpendicular to direction of the detected stress Ax is Az, output Apx of the axis direction of first force sensor is found as Apx=?x (Ax×cos ?+Az×sin ?), and output Apz of the axis direction of the second force sensor is found as Apz=?z (Ax×sin ?+Az×cos ?), and, when ?x and ?z are detection sensitivity coefficients of first and second force sensors respectively, the detection sensitivity coefficient ?z of second force sensor is set as ?z=?x tan ?, and the detected stress Ax is found as Ax=(Apx?Apz)/?x(cos ??tan ?×sin ?).

Abstract: A piezoelectric thin-film resonator includes a device substrate and a laminated body provided on the device substrate and composed of a lower electrode, an upper electrode and a piezoelectric film sandwiched between the lower and upper electrodes. The laminated body has a membrane portion in which the upper and lower electrodes overlap with each other through the piezoelectric film, and a gap has a dome shape being formed between the device substrate and the lower electrode and located below the membrane portion.

Abstract: The present invention provides the stress detection method for force sensor device with multiple axis sensor device and force sensor device employing this method, whose installation angle is arbitrary. The stress detection method includes, first and second force sensors whose detection axes are orthogonal to each other. When the detection axis of first force sensor forms angle ? with direction of detected stress Ax, and the stress component of direction perpendicular to direction of the detected stress Ax is Az, output Apx of the axis direction of first force sensor is found as Apx=?x (Ax×cos ?+Az×sin ?), and output Apz of the axis direction of the second force sensor is found as Apz=?z (Ax×sin ?+Az×cos ?), and, when ?x and ?z are detection sensitivity coefficients of first and second force sensors respectively, the detection sensitivity coefficient ?z of second force sensor is set as ?z=?x tan ?, and the detected stress Ax is found as Ax=(Apx?Apz)/?x(cos ??tan ?×sin ?).

Abstract: An acceleration sensor that suppresses fluctuations in the offset voltage and with an enhanced temperature characteristic is provided. The acceleration sensor comprises an weight that is formed in the center of a semiconductor substrate; a frame that is formed at the circumference of the weight; a beam or diaphragm that connects the weight and frame; a detection element that is formed on the beam or diaphragm and which detects bending of the beam or diaphragm that corresponds with the applied acceleration; and a lead that is formed on the beam or diaphragm and which guides the detection output of the detection element to a pad that is provided on the frame, wherein a dummy lead comprising a plurality of dot patterns which are at least electrically independent of the lead formed on the beam or diaphragm is formed on the beam or diaphragm.

Abstract: A piezoelectric thin-film resonator includes a substrate, a lower electrode arranged on the substrate, a piezoelectric film arranged on the lower electrode, and an upper electrode arranged on the piezoelectric film. A region in which the upper electrode overlaps with the lower electrode through the piezoelectric film has an elliptical shape, and a condition such that 1<a/b<1.9 is satisfied where a is a main axis of the elliptical shape, and b is a sub axis thereof.