Abstract: The resistor of the present invention comprises a substrate, a pair of upper electrode layers disposed on one surface of the substrate, and a resistor layer connected to the pair of upper electrode layers, wherein the upper electrode layer includes a first thin film layer that strongly adheres to the substrate and the resistor layer, and a second thin film layer having volume resistivity lower than the volume resistivity of the first upper electrode thin film layer. Further, the resistor of the present invention comprises a pair of side electrodes, electrically connected to the upper electrode layers, at the end portion of the substrate, and the side electrode includes a first side thin film layer and a second side thin film layer, and the material that forms the second side thin film layer has a solid solubility with the first side thin film layer.

Abstract: A method for treating a patient suffering from a renal failure progressed to a stage at which an initiation of a dialysis therapy is required, comprising combining a peritoneal dialysis and an administration of a spherical carbon, is disclosed.

Abstract: A method for treating a patient suffering from a renal failure progressed to a stage at which an initiation of a dialysis therapy is required, comprising combining a peritoneal dialysis and an administration of a spherical carbon, is disclosed.

Abstract: The present invention relates to an infrared detector element to detect infrared rays by means of a pyroelectric material, and an infrared sensor unit and an infrared detecting device using the infrared detector element and has an object of realizing an omnidirectional infrared detector element that can gain an output against an object to be detected moving in whatever directions.

Abstract: It is the object to minimize a magnetic influence, on the outside, of a semiconductor chip which is formed on a substrate includes inductor conductors. A semiconductor chip 2 including inductor conductors is mounted on a substrate 1 and a plurality of through holes 8 are formed in the area on the outside of the mounting position. Shielding members 4 are formed on the chip mounting side and the opposite side of the substrate 1 and in the through holes 8 so as to cover the semiconductor chip 2 with the shielding members 4 from both sides of the substrate 1. Therefore, magnetic fluxes from a circuit formed on the semiconductor chip 2 do not leak out from the shielding members 4, but circulate inside the shielding members 4.

Abstract: A tuning amplifier 1 is provided with an oscillation circuit 10 incorporating an amplifier circuit 11 and a feedback circuit 12, an input circuit 14 which inputs signals to the oscillation circuit 10, and an automatic gain control (AGC) circuit 16 which controls the output amplitude of the oscillation circuit 10. When signals are inputted to the oscillation circuit 10 through the input circuit 14, such tuning that only signals having frequencies near the oscillation frequency of the oscillation circuit 10 are allowed to pass through is possible.

Abstract: A tuning circuit which has a wide tuning bandwidth. The tuning bandwidth of the tuning frequency can be easily changed. The tuning circuit 1 is composed of two cascade-connected tuning amplifier sections 2 and 3. Each of the sections 2 and 3 is provided with cascade-connected phase-shifting circuits 10C and 30C, a voltage dividing circuit 60, and an adding circuit composed of a feedback resistor 70 and an input resistor 74. Prescribed tuning operation is performed by shifting the phase of a prescribed frequency by 360.degree. by means of the phase shifting circuits 10C and 30C and setting the open loop gain of a feedback loop at less than 1 when the output of the voltage dividing circuit 60 is feedback. The resistance ratio between the feedback resistor 70 and input resistor 74 of each tuning amplifier section is adjusted in order that the maximum damping of each tuning amplifier section becomes smaller and the tuning bandwidth of each amplifier section becomes wider.

Abstract: A tuning circuit which has a wide tuning bandwidth. The tuning bandwidth or the tuning frequency can be easily changed. The tuning circuit 1 is imposed of two cascade-connected tuning amplifier sections 2 and 3. Each of the sections 2 and 3 is provided with cascade-connected phase-shifting circuits 10C and 30C, a non-inverting circuit 50, a voltage dividing circuit 160, and an adding circuit composed of a feedback resistor 70 and an input resistor 74. Prescribed tuning operation is performed by shifting the prescribed frequency 360.degree. by means of the phase shifting circuits 10C and 30C and setting the open loop gain of a feedback loop at less than 1 when the output of the voltage dividing circuit 160 is feedback. The resistance ratio between the feedback resistor 70 and the input resistor 74 of each section 2, 3 is adjusted so that the maximum damping of each section 2, 3 may become smaller and the tuning bandwidth of each section 2, 3 becomes wider.

Abstract: There are provided on a substrate a block layer having an electron affinity smaller than that of the substrate, a p-type strained superlattice structure having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer for accommodating a bending portion of the energy band. The superlattice structure is formed of a multilayer in which a strained well layer and a barrier layer are alternately laminated plural times. The strained well layer has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer has a conduction band lower in energy than that of the strained well layer and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure due to compressive stress in the strained well layer.

Abstract: An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy.

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy.

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy.

Abstract: An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 and gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

Abstract: This invention relates to a rotary structure adapted to be used as a spindle unit for a miniature motor or miniature rotor or as a tape guide roller for a VTR. In the structure of the rotary mechanism, instead of a conventional expensive radial ball bearing, a substantially V-shaped groove is formed on a shaft itself so as to hold balls provided between this groove and the tapered surface or concave spherical ball receiving surface of an outer race provided around the groove.

Abstract: A rotary structure adapted to be used as a spindle unit for a miniature motor or miniature rotor or as a tape guide roller for a VTR. In the structure of the rotary mechanism, instead of a conventional expensive radial ball bearings, a substantially V-shaped groove is formed in the shaft itself so as to hold balls between this groove and the tapered surface or concave spherical ball receiving surface of an outer race provided around the groove.

Abstract: A spindle unit adapted to be used for miniature motors and miniature rotors.

Abstract: This invention is to provide a ball bearing which has a performance close to that of the conventional radial ball bearing, is simple in the formation and is low in the cost for such bearing as for fitting the disc of a disc recording and reproducing device or the roller of the drawer of a desk or the like.

Abstract: This invention relates to a rotary head assembly to be used for digital audio tape recorders (DAT) and the like. A magnetic tape can be made to run parallelly with a drum, the apparatus can be made small and light and the mechanism can be simplified.

Abstract: This invention relates to a rotary structure adapted to be used for a spindle unit of a miniature motor or miniature rotor or for a tape guide roller of a VTR or the like. In the structure of the rotary mechanism, instead of the conventional expensive radial ball bearings, recessed step parts are formed in the shaft itself and balls are held by and between the recessed step parts and ball receiving surfaces formed as tapered surfaces surfaces on outer races provided around the periphery of the shaft.