Abstract: [Object] To freeze droplets of a raw material liquid in a shorter drop distance while maintaining a cooling velocity, which is a super high speed, without deteriorating a solute or dispersoid.

Abstract: A freeze vacuum drying apparatus includes: a spraying unit; a pipe unit; a heating unit; and a collection unit. The spraying unit sprays a raw material liquid into a vacuum chamber. The pipe unit has a non-linear shape, includes a first opening end and a second opening end, and traps frozen particles via the first opening end, the frozen particles being formed by self-freezing of liquid droplets formed by spraying the raw material liquid into the vacuum chamber. The heating unit heats the frozen particles in the pipe unit for sublimation drying, the frozen particles moving in the pipe unit from the first opening end toward the second opening end by kinetic energy produced during spraying. The collection unit collects dried particles that are formed by sublimation drying of the frozen particles in the pipe unit and released from the second opening end of the pipe unit.

Abstract: A freeze vacuum drying apparatus includes: a spraying unit; a pipe unit; a heating unit; and a collection unit. The spraying unit sprays a raw material liquid into a vacuum chamber. The pipe unit has a non-linear shape, includes a first opening end and a second opening end, and traps frozen particles via the first opening end, the frozen particles being formed by self-freezing of liquid droplets formed by spraying the raw material liquid into the vacuum chamber. The heating unit heats the frozen particles in the pipe unit for sublimation drying, the frozen particles moving in the pipe unit from the first opening end toward the second opening end by kinetic energy produced during spraying. The collection unit collects dried particles that are formed by sublimation drying of the frozen particles in the pipe unit and released from the second opening end of the pipe unit.

Abstract: An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.

Abstract: The following abstract replace prior abstract in the application. It is an object to provide a simple and practical method capable of producing a magnetic storage medium of a type such as a bit-patterned type, a magnetic storage medium of the above-mentioned type and an information storage device which may be produced by such a simple and practical method, and in a method of producing a magnetic disk, there are performed: a film-forming process of forming, on a glass substrate 61, a magnetic film 62 so that the Curie temperature becomes 600 K or lower; and an ion injection process (C) of injecting ions locally into an area other than a predetermined protected area on the magnetic film 62.

Abstract: A magnetic recording medium having a high magnetic pattern contrast is manufactured. By changing an acceleration voltage that accelerates ions in a process gas, depths (peak depths D0 and D1) from a magnetic layer 44, at which an injection amount of a target element is the maximum, can be made with set depths even if a film thickness of an ion permeation portion 48, which is a thin film portion of a resist 49, decreases. Since the set depths are achieved for the peak depths D0 and D1, a portion to be processed 43 of the magnetic film 44 is made non-magnetized from a top surface to a bottom surface, and a magnetic portion is separated; thus, the magnetic recording medium with a high magnetic pattern contrast can be obtained.

Abstract: It is an object to produce a magnetic storage medium of a high recording density by a production method that does not impair mass productivity, and a magnetic storage medium 10 is produced by a production method including: a magnetic-film forming step of forming a magnetic film 61 on a substrate 62; and a dots separating step of reducing saturation magnetization by locally injecting mixed ions of N2+ ion and N+ ion into an area, of the substrate 62, other than plural areas which respectively become magnetic dots 62c where information is to be magnetically recorded, thereby forming, between the magnetic dots 62c, a between-dot separator 62d having saturation magnetization smaller than saturation magnetization of the magnetic dots 62c.

Abstract: It is an object to provide a simple method capable of producing a magnetic storage medium, a magnetic storage medium and an information storage device which may be produced by a simple production method with a high recording density, and a magnetic disk is produced by a production method having: a film-forming process of forming, on a substrate 61, a magnetic film made of a Co—Cr—Pt alloy and having a thickness of less than 10 nm; and an ion injection process of forming, by reducing saturation magnetization by locally injecting ions into a point other than plural points that become magnetic dots on each of which information is magnetically recorded, a between-dot separator having saturation magnetization smaller than saturation magnetization of the magnetic dots, between the magnetic dots.

Abstract: A magnetic recording medium is manufactured without the disappearance of the surface of a substrate that comprises a magnetic recording layer by ion milling and without being influenced by the atmosphere. A magnetic recording medium manufacturing device manufactures a magnetic recording medium by implanting an ion beam into a substrate that comprises a magnetic recording layer and removing by ashing the surface of the substrate that comprises the magnetic recording layer after the ion beam is implanted. The magnetic recording medium manufacturing device comprising an ion implantation chamber for implanting the ion beam into the substrate that comprises the magnetic recording layer coated with a resist film or a metal mask, and an ashing chamber for removing, by ashing, with plasma, the resist film or the metal mask of the substrate that comprises the magnetic recording layer coated with the resist film or the metal mask. The ion implantation chamber and the ashing chamber are coupled in a vacuum state.

Abstract: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Abstract: A manufacturing method of a magnetic recording medium includes: forming a magnetic film having an artificial lattice structure by laminating plural types of atomic layers alternately on a substrate; and separating dots, which forms a dot separation band by implanting an ion, to reduce saturation magnetization locally, into portions of the magnetic film other than plural portions of the magnetic film. Each of the plural portions is made into a magnetic dot in which information is to be magnetically recorded. The saturation magnetization of the dot separation band is smaller than that of the magnetic dot.

Abstract: An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.

Abstract: To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°. In the ion implantation device, first, second and third chambers 12A, 14A and 16A are arranged in predetermined places on a beam line, first and second gaps 20A and 22A intervene between the first chamber 12A and the second chamber 14A and between the second chamber 14A and the third chamber 16A, the second chamber 14A is electrically insulated from the first and third chambers 12A and 16A via first and second electrode pairs 26A and 28A attached to the first and second gaps 20A and 22A, respectively, the first and second electrode pairs 26A and 28A obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamber 14 is connected to a scanning power source 40A which applies an electric potential having desired scanning waveform.

Abstract: An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.

Abstract: An ion implantation device that suppresses diffusion of an ion beam, can finely control a scanning waveform, and can obtain a large scanning angle of about 10°. In the ion implantation device, first, second, and third chambers are arranged in predetermined places on a beam line, first and second gaps intervene between the first chamber and the second chamber and between the second chamber and the third chamber. The second chamber is electrically insulated from the first and third chambers via first and second electrode pairs attached to the first and second gaps, respectively. The first and second electrode pairs obliquely cross a standard axis of the ion beam at a predetermined angle in opposite directions, and the second chamber is connected to a scanning power source that applies an electric potential having a desired scanning waveform.

Abstract: The present invention provides a vibration isolation system which can prevent transmission of vibration from a transfer unit or other unit to a vacuum chamber, and can accurately perform positioning of the vacuum chamber connected to an elastic member having a simple structure and a transfer space therein. The present invention includes a vacuum chamber (11) placed on a vibration isolation unit, a transfer chamber (13) having a transfer space through which a work is transferred into the vacuum chamber (11), an elastic member (15) for connecting the vacuum chamber (11) and the transfer chamber (13), an actuator (24, 24) for elastically supporting the vacuum chamber (11) with respect to a fixed-side member, a position sensor (22) for detecting a displacement of the vacuum chamber (11) with respect to the fixed-side member, and a control unit (23) for controlling the actuator (24) based on output of the position sensor.