Abstract: In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.

Abstract: A stencil mask capable of attaining long durability without any special processing thereon, wherein an inversion means for inverting the front and back of the stencil mask formed with an opening pattern penetrating in the thickness direction is provided, so that positions can be changed, that is, a surface irradiated with charged particles can be on the side of facing to a substrate subjected to processing, and a surface faced to the substrate can be on the side of receiving irradiation of charged particles, and the inversion means comprises a mask holder for electrostatically sticking with an outer circumferential part of the stencil mask and a rotation means for rotating the mask holder about an axis of a supporting portion.

Abstract: In an ion implantation system including (a) ion source means, (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate, the ion source means consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected, mass-separated ions from the ion source are led to the acceleration portion, and stencil mask means is arranged approximately to the semiconductor substrate in the end station chamber.