Patents by Inventor Tsutomu Shimokawa
Tsutomu Shimokawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11384172Abstract: Provided is a polymer having antimicrobial and disinfecting properties against a wide range of kinds of germs. A polymer, including: a polymer chain having a repeating unit represented by the following formula (1); and a partial structure (excluding the polymer chain) derived from a compound containing a group represented by —NH—. [In formula (1), R1 represents a hydrogen atom or a methyl group, Z represents a group forming an organic ammonium salt, —NR5R6 (where R5 and R6 each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group), or a substituted or unsubstituted nitrogen-containing heterocyclic group, and X represents a single bond, or a divalent linking group.Type: GrantFiled: December 13, 2016Date of Patent: July 12, 2022Assignees: JSR CORPORATION, JAPAN AS REPRESENTED BY DIRECTOR-GENERAL OF NATIONAL INSTITUTE of INFECTIOUS DISEASES, JSR LIFE SCIENCES CORPORATIONInventors: Hidenori Naruse, Atsushi Itou, Shigeru Ikawa, Tsutomu Shimokawa, Masato Suzuki, Mari Matsui, Satowa Suzuki, Keigo Shibayama, Kazuhiro Ikkyuu
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Patent number: 10415011Abstract: The invention is an adherend recovery method capable of recovering adherends such as cells no matter the types of adherends. An adherend recovery method for recovering an adherend from a support includes exposing a stack disposed on the support, the stack including a photosensitive gas generation layer, an adhesive layer and the adherend in this order on the support, generating a gas from the photosensitive gas generation layer by the exposure to separate the support and the stack from each other by the action of the gas, and recovering the adherend from the support by recovering the stack separated.Type: GrantFiled: February 24, 2016Date of Patent: September 17, 2019Assignee: JSR CORPORATIONInventors: Katsuhiko Hieda, Tsutomu Shimokawa, Hiroto Kubo, Takashi Doi
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Publication number: 20180360033Abstract: Provided is a polymer having antimicrobial and disinfecting properties against a wide range of kinds of germs. A polymer, including: a polymer chain having a repeating unit represented by the following formula (1); and a partial structure (excluding the polymer chain) derived from a compound containing a group represented by —NH—. [In formula (1), R1 represents a hydrogen atom or a methyl group, Z represents a group forming an organic ammonium salt, —NR5R6 (where R5 and R6 each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group), or a substituted or unsubstituted nitrogen-containing heterocyclic group, and X represents a single bond, or a divalent linking group.Type: ApplicationFiled: December 13, 2016Publication date: December 20, 2018Applicants: JSR CORPORATION, JAPAN AS REPRESENTED BY DIRECTOR-GENERAL OF NATIONAL INSTITUTE OF INFECTIOUS DISEASES, JSR LIFE SCIENCES CORPORATIONInventors: Hidenori NARUSE, Atsushi ITOU, Shigeru IKAWA, Tsutomu SHIMOKAWA, Masato SUZUKI, Mari MATSUI, Satowa SUZUKI, Keigo SHIBAYAMA, Kazuhiro IKKYUU
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Publication number: 20160168532Abstract: The invention is an adherend recovery method capable of recovering adherends such as cells no matter the types of adherends. An adherend recovery method for recovering an adherend from a support includes exposing a stack disposed on the support, the stack including a photosensitive gas generation layer, an adhesive layer and the adherend in this order on the support, generating a gas from the photosensitive gas generation layer by the exposure to separate the support and the stack from each other by the action of the gas, and recovering the adherend from the support by recovering the stack separated.Type: ApplicationFiled: February 24, 2016Publication date: June 16, 2016Applicant: JSR CORPORATIONInventors: Katsuhiko HIEDA, Tsutomu SHIMOKAWA, Hiroto KUBO, Takashi DOI
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Patent number: 9348226Abstract: A radiation-sensitive resin composition comprising an acid-labile group-containing resin obtained by living radical polymerization having a specific structure which is insoluble or scarcely soluble in alkali, but becomes alkali soluble by the action of an acid, and a photoacid generator, wherein the ratio of weight average molecular weight to number average molecular weight (weight average molecular weight/number average molecular weight) of the acid-labile group-containing resin is smaller than 1.5.Type: GrantFiled: December 24, 2003Date of Patent: May 24, 2016Assignee: JSR CORPORATIONInventors: Isao Nishimura, Kouichi Fujiwara, Eiichi Kobayashi, Tsutomu Shimokawa, Atsushi Nakamura, Eiji Yoneda, Yong Wang
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Publication number: 20140363773Abstract: A radiation-sensitive resin composition includes a resin including a repeating unit shown by a following general formula (1), a photoacid generator and a photodisintegrating base shown by a following general formula (8). R1 represents a hydrogen atom or a methyl group, and each of R2s individually represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, a linear or branched alkyl group having 1 to 4 carbon atoms, or the like. Each of R18 to R20 individually represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group or a halogen atom, and Z? represents OH?, R—COO?, R—SO3? or an anion shown by a following formula (10), wherein R represents an alkyl group, an aryl group or an alkaryl group.Type: ApplicationFiled: August 21, 2014Publication date: December 11, 2014Applicant: JSR CorporationInventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
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Patent number: 8450045Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.Type: GrantFiled: January 18, 2012Date of Patent: May 28, 2013Assignee: JSR CorporationInventors: Hikaru Sugita, Nobuji Matsumura, Daisuke Shimizu, Toshiyuki Kai, Tsutomu Shimokawa
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Patent number: 8431324Abstract: A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, an acid diffusion controller, and a mixed solvent. The radiation-sensitive acid generator includes a compound (I) shown by a following general formula (I). The mixed solvent includes about 50 mass % to about 90 mass % of propylene glycol monomethyl ether acetate, wherein M+ represents a sulfonium cation or an iodonium cation, R represents a hydrogen atom or a hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, n represents an integer from 1 to 10, and m represents an integer from 1 to 4.Type: GrantFiled: May 7, 2010Date of Patent: April 30, 2013Assignee: JSR CorporationInventors: Tsutomu Shimokawa, Takuma Ebata
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Patent number: 8377627Abstract: A compound shown by the following formula (1).Type: GrantFiled: July 30, 2008Date of Patent: February 19, 2013Assignee: JSR CorporationInventors: Daisuke Shimizu, Ken Maruyama, Toshiyuki Kai, Tsutomu Shimokawa
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Patent number: 8211624Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.Type: GrantFiled: May 21, 2008Date of Patent: July 3, 2012Assignee: JSR CorporationInventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
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Publication number: 20120156621Abstract: A radiation-sensitive resin composition includes a resin including a repeating unit shown by a following general formula (1), a photoacid generator and a photodisintegrating base shown by a following general formula (8). R2 represents a hydrogen atom or a methyl group, and each of R2s individually represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, a linear or branched alkyl group having 1 to 4 carbon atoms, or the like. Each of R18 to R20 individually represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group or a halogen atom, and Z? represents OH?, R—COO?, R—SO3? or an anion shown by a following formula (10), wherein R represents an alkyl group, an aryl group or an alkaryl group.Type: ApplicationFiled: February 23, 2012Publication date: June 21, 2012Applicant: JSR CorporationInventors: Atsushi NAKAMURA, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
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Publication number: 20120122036Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.Type: ApplicationFiled: January 18, 2012Publication date: May 17, 2012Applicant: JSR CorporationInventors: Hikaru SUGITA, Nobuji MATSUMURA, Daisuke SHIMIZU, Toshiyuki KAI, Tsutomu SHIMOKAWA
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Patent number: 8173348Abstract: A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.Type: GrantFiled: June 21, 2007Date of Patent: May 8, 2012Assignee: JSR CorporationInventors: Daisuke Shimizu, Hikaru Sugita, Nobuji Matsumura, Toshiyuki Kai, Tsutomu Shimokawa
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Patent number: 8173351Abstract: A compound shown by the following formula (1) can be used as a material for a radiation-sensitive composition capable of forming a resist film which effectively responds to electron beams or the like, exhibits low roughness, and can form a high precision minute pattern in a stable manner.Type: GrantFiled: January 8, 2008Date of Patent: May 8, 2012Assignee: JSR CorporationInventors: Daisuke Shimizu, Ken Maruyama, Toshiyuki Kai, Tsutomu Shimokawa
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Patent number: 8119324Abstract: A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided.Type: GrantFiled: July 27, 2007Date of Patent: February 21, 2012Assignee: JSR CorporationInventors: Hikaru Sugita, Nobuji Matsumura, Daisuke Shimizu, Toshiyuki Kai, Tsutomu Shimokawa
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Publication number: 20110143279Abstract: A radiation-sensitive resin composition includes a sulfonate or sulfonic acid group-containing photoacid generator and a resin. The sulfonate or sulfonic acid group-containing photoacid generator includes a partial structure shown by a following formula (1), wherein R1 represents a substituted or unsubstituted linear or branched monovalent hydrocarbon group having 1 to 30 carbon atoms, a substituted or unsubstituted cyclic or partially cyclic monovalent hydrocarbon group having 3 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted cyclic monovalent organic group having 4 to 30 carbon atoms that include a hetero atom.Type: ApplicationFiled: January 13, 2011Publication date: June 16, 2011Applicant: JSR CorporationInventors: Tsutomu SHIMOKAWA, Takuma Ebata, Kaori Sakai, Yoshifumi Oizumi, Akimasa Soyano, Noboru Otsuka
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Publication number: 20110117489Abstract: A compound shown by the following formula (1).Type: ApplicationFiled: July 30, 2008Publication date: May 19, 2011Applicant: JSR CorporationInventors: Daisuke Shimizu, Ken Maruyama, Toshiyuki Kai, Tsutomu Shimokawa
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Patent number: 7897821Abstract: A compound is shown by the following formula (5) in which at least one of Rf groups represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A? represents a substituted or unsubstituted, linear or branched alkylene group having 1 to 20 carbon atoms, an alkylene group having at least one hetero atom, or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mm+ represents an onium cation, m represents a natural number of 1 to 3, and p represents a natural number of 1 to 8.Type: GrantFiled: August 31, 2010Date of Patent: March 1, 2011Assignee: JSR CorporationInventors: Tomoki Nagai, Eiji Yoneda, Takuma Ebata, Takanori Kawakami, Makoto Sugiura, Tsutomu Shimokawa, Makoto Shimizu
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Publication number: 20100324329Abstract: A compound is shown by the following formula (5) in which at least one of Rf groups represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A? represents a substituted or unsubstituted, linear or branched alkylene group having 1 to 20 carbon atoms, an alkylene group having at least one hetero atom, or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mm+ represents an onium cation, m represents a natural number of 1 to 3, and p represents a natural number of 1 to 8.Type: ApplicationFiled: August 31, 2010Publication date: December 23, 2010Applicant: JSR CorporationInventors: Tomoki Nagai, Eiji Yoneda, Takuma Ebata, Takanori Kawakami, Makoto Sugiura, Tsutomu Shimokawa, Makoto Shimizu
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Publication number: 20100285405Abstract: A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, an acid diffusion controller, and a mixed solvent. The radiation-sensitive acid generator includes a compound (I) shown by a following general formula (I). The mixed solvent includes about 50 mass % to about 90 mass % of propylene glycol monomethyl ether acetate, wherein M+ represents a sulfonium cation or an iodonium cation, R represents a hydrogen atom or a hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, n represents an integer from 1 to 10, and m represents an integer from 1 to 4.Type: ApplicationFiled: May 7, 2010Publication date: November 11, 2010Applicant: JSR CorporationInventors: Tsutomu SHIMOKAWA, Takuma Ebata