Patents by Inventor Tsutomu Shimokawa

Tsutomu Shimokawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11384172
    Abstract: Provided is a polymer having antimicrobial and disinfecting properties against a wide range of kinds of germs. A polymer, including: a polymer chain having a repeating unit represented by the following formula (1); and a partial structure (excluding the polymer chain) derived from a compound containing a group represented by —NH—. [In formula (1), R1 represents a hydrogen atom or a methyl group, Z represents a group forming an organic ammonium salt, —NR5R6 (where R5 and R6 each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group), or a substituted or unsubstituted nitrogen-containing heterocyclic group, and X represents a single bond, or a divalent linking group.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: July 12, 2022
    Assignees: JSR CORPORATION, JAPAN AS REPRESENTED BY DIRECTOR-GENERAL OF NATIONAL INSTITUTE of INFECTIOUS DISEASES, JSR LIFE SCIENCES CORPORATION
    Inventors: Hidenori Naruse, Atsushi Itou, Shigeru Ikawa, Tsutomu Shimokawa, Masato Suzuki, Mari Matsui, Satowa Suzuki, Keigo Shibayama, Kazuhiro Ikkyuu
  • Patent number: 10415011
    Abstract: The invention is an adherend recovery method capable of recovering adherends such as cells no matter the types of adherends. An adherend recovery method for recovering an adherend from a support includes exposing a stack disposed on the support, the stack including a photosensitive gas generation layer, an adhesive layer and the adherend in this order on the support, generating a gas from the photosensitive gas generation layer by the exposure to separate the support and the stack from each other by the action of the gas, and recovering the adherend from the support by recovering the stack separated.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: September 17, 2019
    Assignee: JSR CORPORATION
    Inventors: Katsuhiko Hieda, Tsutomu Shimokawa, Hiroto Kubo, Takashi Doi
  • Publication number: 20180360033
    Abstract: Provided is a polymer having antimicrobial and disinfecting properties against a wide range of kinds of germs. A polymer, including: a polymer chain having a repeating unit represented by the following formula (1); and a partial structure (excluding the polymer chain) derived from a compound containing a group represented by —NH—. [In formula (1), R1 represents a hydrogen atom or a methyl group, Z represents a group forming an organic ammonium salt, —NR5R6 (where R5 and R6 each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group), or a substituted or unsubstituted nitrogen-containing heterocyclic group, and X represents a single bond, or a divalent linking group.
    Type: Application
    Filed: December 13, 2016
    Publication date: December 20, 2018
    Applicants: JSR CORPORATION, JAPAN AS REPRESENTED BY DIRECTOR-GENERAL OF NATIONAL INSTITUTE OF INFECTIOUS DISEASES, JSR LIFE SCIENCES CORPORATION
    Inventors: Hidenori NARUSE, Atsushi ITOU, Shigeru IKAWA, Tsutomu SHIMOKAWA, Masato SUZUKI, Mari MATSUI, Satowa SUZUKI, Keigo SHIBAYAMA, Kazuhiro IKKYUU
  • Publication number: 20160168532
    Abstract: The invention is an adherend recovery method capable of recovering adherends such as cells no matter the types of adherends. An adherend recovery method for recovering an adherend from a support includes exposing a stack disposed on the support, the stack including a photosensitive gas generation layer, an adhesive layer and the adherend in this order on the support, generating a gas from the photosensitive gas generation layer by the exposure to separate the support and the stack from each other by the action of the gas, and recovering the adherend from the support by recovering the stack separated.
    Type: Application
    Filed: February 24, 2016
    Publication date: June 16, 2016
    Applicant: JSR CORPORATION
    Inventors: Katsuhiko HIEDA, Tsutomu SHIMOKAWA, Hiroto KUBO, Takashi DOI
  • Patent number: 9348226
    Abstract: A radiation-sensitive resin composition comprising an acid-labile group-containing resin obtained by living radical polymerization having a specific structure which is insoluble or scarcely soluble in alkali, but becomes alkali soluble by the action of an acid, and a photoacid generator, wherein the ratio of weight average molecular weight to number average molecular weight (weight average molecular weight/number average molecular weight) of the acid-labile group-containing resin is smaller than 1.5.
    Type: Grant
    Filed: December 24, 2003
    Date of Patent: May 24, 2016
    Assignee: JSR CORPORATION
    Inventors: Isao Nishimura, Kouichi Fujiwara, Eiichi Kobayashi, Tsutomu Shimokawa, Atsushi Nakamura, Eiji Yoneda, Yong Wang
  • Publication number: 20140363773
    Abstract: A radiation-sensitive resin composition includes a resin including a repeating unit shown by a following general formula (1), a photoacid generator and a photodisintegrating base shown by a following general formula (8). R1 represents a hydrogen atom or a methyl group, and each of R2s individually represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, a linear or branched alkyl group having 1 to 4 carbon atoms, or the like. Each of R18 to R20 individually represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group or a halogen atom, and Z? represents OH?, R—COO?, R—SO3? or an anion shown by a following formula (10), wherein R represents an alkyl group, an aryl group or an alkaryl group.
    Type: Application
    Filed: August 21, 2014
    Publication date: December 11, 2014
    Applicant: JSR Corporation
    Inventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
  • Patent number: 8450045
    Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: May 28, 2013
    Assignee: JSR Corporation
    Inventors: Hikaru Sugita, Nobuji Matsumura, Daisuke Shimizu, Toshiyuki Kai, Tsutomu Shimokawa
  • Patent number: 8431324
    Abstract: A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, an acid diffusion controller, and a mixed solvent. The radiation-sensitive acid generator includes a compound (I) shown by a following general formula (I). The mixed solvent includes about 50 mass % to about 90 mass % of propylene glycol monomethyl ether acetate, wherein M+ represents a sulfonium cation or an iodonium cation, R represents a hydrogen atom or a hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, n represents an integer from 1 to 10, and m represents an integer from 1 to 4.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: April 30, 2013
    Assignee: JSR Corporation
    Inventors: Tsutomu Shimokawa, Takuma Ebata
  • Patent number: 8377627
    Abstract: A compound shown by the following formula (1).
    Type: Grant
    Filed: July 30, 2008
    Date of Patent: February 19, 2013
    Assignee: JSR Corporation
    Inventors: Daisuke Shimizu, Ken Maruyama, Toshiyuki Kai, Tsutomu Shimokawa
  • Patent number: 8211624
    Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: July 3, 2012
    Assignee: JSR Corporation
    Inventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
  • Publication number: 20120156621
    Abstract: A radiation-sensitive resin composition includes a resin including a repeating unit shown by a following general formula (1), a photoacid generator and a photodisintegrating base shown by a following general formula (8). R2 represents a hydrogen atom or a methyl group, and each of R2s individually represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, a linear or branched alkyl group having 1 to 4 carbon atoms, or the like. Each of R18 to R20 individually represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group or a halogen atom, and Z? represents OH?, R—COO?, R—SO3? or an anion shown by a following formula (10), wherein R represents an alkyl group, an aryl group or an alkaryl group.
    Type: Application
    Filed: February 23, 2012
    Publication date: June 21, 2012
    Applicant: JSR Corporation
    Inventors: Atsushi NAKAMURA, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
  • Publication number: 20120122036
    Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.
    Type: Application
    Filed: January 18, 2012
    Publication date: May 17, 2012
    Applicant: JSR Corporation
    Inventors: Hikaru SUGITA, Nobuji MATSUMURA, Daisuke SHIMIZU, Toshiyuki KAI, Tsutomu SHIMOKAWA
  • Patent number: 8173348
    Abstract: A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: May 8, 2012
    Assignee: JSR Corporation
    Inventors: Daisuke Shimizu, Hikaru Sugita, Nobuji Matsumura, Toshiyuki Kai, Tsutomu Shimokawa
  • Patent number: 8173351
    Abstract: A compound shown by the following formula (1) can be used as a material for a radiation-sensitive composition capable of forming a resist film which effectively responds to electron beams or the like, exhibits low roughness, and can form a high precision minute pattern in a stable manner.
    Type: Grant
    Filed: January 8, 2008
    Date of Patent: May 8, 2012
    Assignee: JSR Corporation
    Inventors: Daisuke Shimizu, Ken Maruyama, Toshiyuki Kai, Tsutomu Shimokawa
  • Patent number: 8119324
    Abstract: A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: February 21, 2012
    Assignee: JSR Corporation
    Inventors: Hikaru Sugita, Nobuji Matsumura, Daisuke Shimizu, Toshiyuki Kai, Tsutomu Shimokawa
  • Publication number: 20110143279
    Abstract: A radiation-sensitive resin composition includes a sulfonate or sulfonic acid group-containing photoacid generator and a resin. The sulfonate or sulfonic acid group-containing photoacid generator includes a partial structure shown by a following formula (1), wherein R1 represents a substituted or unsubstituted linear or branched monovalent hydrocarbon group having 1 to 30 carbon atoms, a substituted or unsubstituted cyclic or partially cyclic monovalent hydrocarbon group having 3 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted cyclic monovalent organic group having 4 to 30 carbon atoms that include a hetero atom.
    Type: Application
    Filed: January 13, 2011
    Publication date: June 16, 2011
    Applicant: JSR Corporation
    Inventors: Tsutomu SHIMOKAWA, Takuma Ebata, Kaori Sakai, Yoshifumi Oizumi, Akimasa Soyano, Noboru Otsuka
  • Publication number: 20110117489
    Abstract: A compound shown by the following formula (1).
    Type: Application
    Filed: July 30, 2008
    Publication date: May 19, 2011
    Applicant: JSR Corporation
    Inventors: Daisuke Shimizu, Ken Maruyama, Toshiyuki Kai, Tsutomu Shimokawa
  • Patent number: 7897821
    Abstract: A compound is shown by the following formula (5) in which at least one of Rf groups represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A? represents a substituted or unsubstituted, linear or branched alkylene group having 1 to 20 carbon atoms, an alkylene group having at least one hetero atom, or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mm+ represents an onium cation, m represents a natural number of 1 to 3, and p represents a natural number of 1 to 8.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: March 1, 2011
    Assignee: JSR Corporation
    Inventors: Tomoki Nagai, Eiji Yoneda, Takuma Ebata, Takanori Kawakami, Makoto Sugiura, Tsutomu Shimokawa, Makoto Shimizu
  • Publication number: 20100324329
    Abstract: A compound is shown by the following formula (5) in which at least one of Rf groups represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A? represents a substituted or unsubstituted, linear or branched alkylene group having 1 to 20 carbon atoms, an alkylene group having at least one hetero atom, or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mm+ represents an onium cation, m represents a natural number of 1 to 3, and p represents a natural number of 1 to 8.
    Type: Application
    Filed: August 31, 2010
    Publication date: December 23, 2010
    Applicant: JSR Corporation
    Inventors: Tomoki Nagai, Eiji Yoneda, Takuma Ebata, Takanori Kawakami, Makoto Sugiura, Tsutomu Shimokawa, Makoto Shimizu
  • Publication number: 20100285405
    Abstract: A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, an acid diffusion controller, and a mixed solvent. The radiation-sensitive acid generator includes a compound (I) shown by a following general formula (I). The mixed solvent includes about 50 mass % to about 90 mass % of propylene glycol monomethyl ether acetate, wherein M+ represents a sulfonium cation or an iodonium cation, R represents a hydrogen atom or a hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, n represents an integer from 1 to 10, and m represents an integer from 1 to 4.
    Type: Application
    Filed: May 7, 2010
    Publication date: November 11, 2010
    Applicant: JSR Corporation
    Inventors: Tsutomu SHIMOKAWA, Takuma Ebata