Patents by Inventor Tsutomu Takai

Tsutomu Takai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11349451
    Abstract: An elastic wave device includes a SiNx layer stacked directly or indirectly on a supporting substrate made of a semiconductor material, a piezoelectric film stacked on directly or indirectly the SiNx layer, and an interdigital transducer electrode stacked directly or indirectly on at least one main surface of the piezoelectric film. In the SiNx layer, x is about 1.34 or more and about 1.66 or less.
    Type: Grant
    Filed: January 8, 2019
    Date of Patent: May 31, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tsutomu Takai, Koji Yamamoto, Hideki Iwamoto
  • Patent number: 11271544
    Abstract: A multiplexer includes N acoustic wave filters each including one end connected in common and having a different pass band, in which when the N acoustic wave filters are in order from a side of a lower frequency of the pass band, at least one n-th acoustic wave filter among the N acoustic wave filters excluding an acoustic wave filter having the highest frequency of the pass band includes one or more acoustic wave resonators including a support substrate, a silicon nitride film laminated on the support substrate, a silicon oxide film laminated on the silicon nitride film, a piezoelectric body laminated on the silicon oxide film, and an IDT electrode provided on the piezoelectric body. All acoustic wave filters having a pass band in a higher frequency than a frequency of a pass band of the n-th acoustic wave filter satisfy fh1_t(n)>fu(m) or fh1_t(n)<fl(m).
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: March 8, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryo Nakagawa, Shou Nagatomo, Hideki Iwamoto, Tsutomu Takai
  • Publication number: 20220029599
    Abstract: An acoustic wave device includes a support substrate including silicon, a piezoelectric layer in which a rotated Y-cut X-propagation lithium tantalate is included, and an IDT electrode. A film thickness of the piezoelectric layer is less than or equal to about 1?. When ?111 is an angle between a directional vector k111, and a direction of silicon and n is an arbitrary integer, the angle ?111 is in a range of about 0°+120°×n??111?45°+120°×n or in a range of about 75°+120°×n??111?120°+120°×n when the IDT electrode is on a positive surface of the piezoelectric layer and the angle ?111 is in a range of about 15°+120°×n??111?105°+120°×n when the IDT electrode is on the negative surface of the piezoelectric layer.
    Type: Application
    Filed: October 4, 2021
    Publication date: January 27, 2022
    Inventors: Hideki IWAMOTO, Akira MICHIGAMI, Tsutomu TAKAI, Takeshi NAKAO
  • Patent number: 11218130
    Abstract: An acoustic wave device includes a support substrate having a central region and a surrounding region located around the central region, a silicon oxide film that is located in the central region directly or indirectly and that has a side surface, a piezoelectric layer that is provided on the silicon oxide film and that has a first principal surface and a second principal surface, an excitation electrode provided on at least one of the first principal surface and the second principal surface, a cover film provided to cover the entire side surface of the silicon oxide film, a resin layer that is provided in the surrounding region and that is provided to cover the side surface of the silicon oxide film from above the cover film, and a wiring electrode that is electrically connected to the excitation electrode and that extends from the piezoelectric layer to the resin layer.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: January 4, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Akira Michigami, Yasumasa Taniguchi, Tsutomu Takai
  • Patent number: 11159141
    Abstract: An acoustic wave device includes a high-acoustic-velocity film, a piezoelectric layer provided directly or indirectly on the high-acoustic-velocity film, an IDT electrode provided on the piezoelectric layer, and a dielectric film provided on the piezoelectric layer to cover the IDT electrode. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. The dielectric film includes a material including hydrogen atoms.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: October 26, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Koji Yamamoto, Tsutomu Takai, Hideaki Takahashi
  • Patent number: 11115003
    Abstract: In an acoustic wave device, an antenna end resonator electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is equal to or less than about 3.5?. A cut angle of the piezoelectric layer of the first acoustic wave resonator is within a range of ?B±4°. The cut angle of the piezoelectric layer of the second acoustic wave resonator has a larger difference from ?B (°) than the cut angle of the piezoelectric layer of the first acoustic wave resonator.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: September 7, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryo Nakagawa, Hideki Iwamoto, Tsutomu Takai, Yuichi Takamine
  • Patent number: 10862455
    Abstract: An elastic wave device includes a piezoelectric thin film provided on a low acoustic velocity film and an IDT electrode provided on the piezoelectric thin film, wherein the piezoelectric thin film is made of a piezoelectric single crystal and includes a first principal surface that is a positive surface in a polarization axis direction and a second principal surface that is a negative surface in the polarization axis direction. The first principal surface of the piezoelectric thin film faces the low acoustic velocity film, and the second principal surface faces the IDT electrode.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: December 8, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tsutomu Takai, Atsushi Tanaka, Seiji Kai
  • Publication number: 20200336133
    Abstract: In an acoustic wave device, an antenna end resonator electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is equal to or less than about 3.5?. A cut angle of the piezoelectric layer of the first acoustic wave resonator is within a range of ?B±4°. The cut angle of the piezoelectric layer of the second acoustic wave resonator has a larger difference from ?B (°) than the cut angle of the piezoelectric layer of the first acoustic wave resonator.
    Type: Application
    Filed: July 6, 2020
    Publication date: October 22, 2020
    Inventors: Ryo NAKAGAWA, Hideki IWAMOTO, Tsutomu TAKAI, Yuichi TAKAMINE
  • Publication number: 20200328823
    Abstract: In an acoustic wave device, an antenna end resonator that is electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is about 3.5? or less when a wavelength of an acoustic wave is denoted as ?. The first acoustic wave resonator and the second acoustic wave resonator satisfy at least one of a first condition, a second condition, and a third condition. The first condition is a condition that the first acoustic wave resonator further includes a dielectric film provided between the piezoelectric layer and an interdigital transducer electrode, and the second acoustic wave resonator does not include the dielectric film.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Inventors: Ryo NAKAGAWA, Hideki IWAMOTO, Tsutomu TAKAI
  • Publication number: 20200328728
    Abstract: Of a plurality of acoustic wave resonators, the acoustic wave resonator electrically closest to a first terminal is an antenna end resonator, the antenna end resonator is a first acoustic wave resonator and at least one acoustic wave resonator other than the antenna end resonator of the plurality of acoustic wave resonators is a second acoustic wave resonator. An acoustic wave device satisfies a first condition. The first condition is a condition that a high acoustic velocity layer of the first acoustic wave resonator and a high acoustic velocity layer of the second acoustic wave resonator each include a silicon substrate, a surface closer to a piezoelectric layer in the silicon substrate of the first acoustic wave resonator is a plane or a plane, and a surface closer to a piezoelectric layer in the silicon substrate of the second acoustic wave resonator is a plane.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Inventors: Ryo NAKAGAWA, Hideki IWAMOTO, Tsutomu TAKAI, Sunao YAMAZAKI
  • Publication number: 20200328822
    Abstract: An acoustic wave device is provided between a first terminal that is an antenna terminal and a second terminal that is different from the first terminal, and includes a plurality of acoustic wave resonators. The plurality of acoustic wave resonators include a plurality of series arm resonators and a plurality of parallel arm resonators. When the acoustic wave resonator electrically closest to the first terminal among the plurality of acoustic wave resonators is an antenna end resonator, the antenna end resonator is a SAW resonator or a BAW resonator. At least one acoustic wave resonator other than the antenna end resonator among the plurality of acoustic wave resonators is a first acoustic wave resonator.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Inventors: Ryo NAKAGAWA, Katsuya DAIMON, Hideki IWAMOTO, Tsutomu TAKAI
  • Patent number: 10756698
    Abstract: An elastic wave device includes a multilayer film including a piezoelectric thin film laminated on a support substrate. In a region outside a region in which an IDT electrode is provided, the multilayer film is not disposed. A first insulating layer extends from at least a portion of the region to a region on the piezoelectric thin film. A wiring electrode extends to a region on the first insulating layer from a region on the piezoelectric thin film and to extend to a region on a portion of the first insulating layer located in the region. A support layer including a cavity defining a hollow space is provided on the support substrate. The support layer includes, on the wiring electrode, a portion extending from the region to a region above an inner end of the first insulating layer.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: August 25, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Yamane, Tsutomu Takai, Toru Takeshita
  • Publication number: 20200228087
    Abstract: An acoustic wave device includes a support substrate having a central region and a surrounding region located around the central region, a silicon oxide film that is located in the central region directly or indirectly and that has a side surface, a piezoelectric layer that is provided on the silicon oxide film and that has a first principal surface and a second principal surface, an excitation electrode provided on at least one of the first principal surface and the second principal surface, a cover film provided to cover the entire side surface of the silicon oxide film, a resin layer that is provided in the surrounding region and that is provided to cover the side surface of the silicon oxide film from above the cover film, and a wiring electrode that is electrically connected to the excitation electrode and that extends from the piezoelectric layer to the resin layer.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 16, 2020
    Inventors: Akira MICHIGAMI, Yasumasa TANIGUCHI, Tsutomu TAKAI
  • Publication number: 20200186128
    Abstract: An acoustic wave device includes a high-acoustic-velocity film, a low-acoustic-velocity film provided on the high-acoustic-velocity film, a piezoelectric layer provided on the low-acoustic-velocity film, and an IDT electrode provided on the piezoelectric layer. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. An acoustic velocity of bulk waves propagating through the low-acoustic-velocity film is lower than an acoustic velocity of bulk waves propagating through the piezoelectric layer. The low-acoustic-velocity film includes a material including hydrogen atoms.
    Type: Application
    Filed: December 9, 2019
    Publication date: June 11, 2020
    Inventors: Koji YAMAMOTO, Tsutomu TAKAI, Hideaki TAKAHASHI
  • Publication number: 20200186119
    Abstract: An acoustic wave device includes a high-acoustic-velocity film, a piezoelectric layer provided directly or indirectly on the high-acoustic-velocity film, an IDT electrode provided on the piezoelectric layer, and a dielectric film provided on the piezoelectric layer to cover the IDT electrode. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. The dielectric film includes a material including hydrogen atoms.
    Type: Application
    Filed: December 9, 2019
    Publication date: June 11, 2020
    Inventors: Koji YAMAMOTO, Tsutomu TAKAI, Hideaki TAKAHASHI
  • Patent number: 10680577
    Abstract: An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about ?2.4, and TSi>20.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: June 9, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryo Nakagawa, Hideki Iwamoto, Tsutomu Takai
  • Publication number: 20200177153
    Abstract: An acoustic wave device includes a support substrate, a silicon nitride film stacked on the support substrate, a silicon oxide film stacked on the silicon nitride film, a piezoelectric body stacked on the silicon oxide film and made of lithium tantalite, and an IDT electrode provided on one main surface of the piezoelectric body. For a wavelength normalized film thickness of the piezoelectric body, an Euler angle of the piezoelectric body, a wavelength normalized film thickness of the silicon nitride film, a wavelength normalized film thickness of the silicon oxide film, and a wavelength normalized film thickness of the IDT electrode, values are set so that at least one of a response intensity of a first higher order mode, corresponding to the response intensity of a second higher order mode, and of a response intensity of a third higher mode is greater than about ?2.4.
    Type: Application
    Filed: February 6, 2020
    Publication date: June 4, 2020
    Inventors: Ryo NAKAGAWA, Shou NAGATOMO, Hideki IWAMOTO, Tsutomu TAKAI
  • Publication number: 20200177157
    Abstract: A multiplexer includes N acoustic wave filters each including one end connected in common and having a different pass band, in which when the N acoustic wave filters are in order from a side of a lower frequency of the pass band, at least one n-th acoustic wave filter among the N acoustic wave filters excluding an acoustic wave filter having the highest frequency of the pass band includes one or more acoustic wave resonators including a support substrate, a silicon nitride film laminated on the support substrate, a silicon oxide film laminated on the silicon nitride film, a piezoelectric body laminated on the silicon oxide film, and an IDT electrode provided on the piezoelectric body. All acoustic wave filters having a pass band in a higher frequency than a frequency of a pass band of the n-th acoustic wave filter satisfy fhl_t(n)>fu(m) or fhl_t(n)<fl(m).
    Type: Application
    Filed: February 6, 2020
    Publication date: June 4, 2020
    Inventors: Ryo NAKAGAWA, Shou NAGATOMO, Hideki IWAMOTO, Tsutomu TAKAI
  • Patent number: 10659002
    Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 ?m and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: May 19, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Koji Yamamoto, Tsutomu Takai, Seiji Kai, Hisashi Yamazaki, Yuji Miwa, Takashi Yamane, Noriyoshi Ota, Atsushi Tanaka
  • Patent number: 10659001
    Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: May 19, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Koji Yamamoto, Tsutomu Takai, Seiji Kai, Hisashi Yamazaki, Yuji Miwa, Takashi Yamane