Abstract: To provide a novel and improved information processing device that can make more efficient an inspection performed by a flying body capable of performing imaging. Provided is an information processing device including an imaging position information acquisition unit configured to acquire imaging position information at a time when a structure is imaged which is acquired by an imaging device configured to fly over a periphery of die structure to image the structure on the basis of certain flight information, and a damage data generating unit configured to use a captured image of the structure imaged by the imaging device and the imaging position information and to generate data related to damage of the structure including position information of damage of the structure included in the captured image.

Abstract: Methods of generating a plasma in a semiconductor processing chamber comprise: applying a radio frequency (RF) power to generate a plasma in a plasma region of the processing chamber, the processing chamber containing: a showerhead, an ion blocker plate, and a substrate, and the plasma region being defined by a front surface of the showerhead and a back surface of the ion blocker plate; and applying a bias the ion blocker plate so that there is no light-up in the processing chamber. Some methods further include dynamically tuning the bias by assessing conditions of light-up or no light-up and adjusting the bias. Some methods further include applying the bias zonally.

Abstract: It is an object of the present disclosure to dispose an optical element on a lower surface side of transistors without being influenced by heat treatment in a transistor forming process such that peeling, displacement, and the like do not easily occur. A transistor array substrate includes: a first substrate (110) including transistors (113) arranged in an array; and a second substrate (120) including an optical element (122), in which the transistors are arranged on a front surface side of the first substrate, and the second substrate is bonded to a back surface of the first substrate by plasma bonding treatment.

Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.

Abstract: A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.

Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.

Abstract: Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may be housed in a processing region of a semiconductor processing chamber. The processing region may be defined between a faceplate and a substrate support on which the semiconductor substrate is seated. The methods may include forming a treatment plasma within the processing region of the semiconductor processing chamber. The treatment plasma may be formed at a first power level from a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The methods may include densifying the flowable film within the feature defined within the semiconductor substrate with plasma effluents of the treatment plasma.

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

Abstract: A gas circuit breaker comprises: a first arc contactor 21; a cylindrical second arc contactor 41; a rod-shaped trigger electrode 31 that is disposed to be movable between the first arc contactor 21 and the second arc contactor 41, and moves inside the cylindrical second arc contactor 41 to ignite an arc at the second arc contactor 41 in the latter half of the current break interval; and a guide portion 41b that has an inner diameter larger than the outer diameter of the trigger electrode 31, has an inner diameter smaller than the inner diameter of a portion of the second arc contactor 41 which is close to the trigger electrode 31, and is disposed in the cylinder of the second arc contactor 41 so as to go around the trigger electrode 31 when the trigger electrode 31 is in a closed state with the first arc contactor 21.

Abstract: A gas circuit breaker of an embodiment includes a sealed container, a first contact part and a second contact part, an operation mechanism, an insulating nozzle, a pressure accumulator, and an electric field shield. The insulating nozzle is displaced in conjunction with the first contact part in a separation process of the first contact part and the second contact part. The insulating nozzle surrounds arc discharge generated between the first contact part and the second contact part. The electric field shield is attached to the insulating nozzle. The electric field shield has a floating potential during a period of at least part of the separation process. The electric field shield is electrically connected to the second contact part such that the electric field shield has the same potential in a completely open electrode state in which separation between the first contact part and the second contact part is terminated.

Abstract: A gas circuit breaker 1 includes an insulation nozzle 23 that guides arc-extinguishing gas to an arc between a first arc contactor 21 and a second arc contactor 41 when a trigger electrode 31 becomes an opened state relative to the first arc contactor 21. The second arc contactor 41 has an opening 41a for spraying the arc-extinguishing gas, and the opening 41a is closed by the trigger electrode 31 in the first half of a current breaking action, and is opened by separation of the trigger electrode in the latter half of the current breaking action. An opening area of a first exhaust port 41b formed between the second arc contactor 41 and the insulation nozzle 23 for exhausting the arc-extinguishing gas is 0.2 times or more and two times or less of an opening area of the opening 41a of the second arc contactor 41.

Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Abstract: A printer includes an input device for receiving an input operation to the printer from a user, a memory, a printing device, and a controller. The controller is configured to: receive print data from a terminal; in a case where the controller determines that the print data received from the terminal is raster data, determine whether a particular condition is met; in a case where the controller determines that the particular condition is met, send, to the terminal, request information that requests the terminal to send page description language (PDL) data; and, in a case where the controller receives the PDL data from the terminal after sending the request information to the terminal, allow the printing device to execute printing on a basis of the PDL data. The PDL data specifies types of drawing objects and drawing positions with commands.