Patents by Inventor Tsutomu Tanaka
Tsutomu Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923172Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.Type: GrantFiled: February 8, 2022Date of Patent: March 5, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Patent number: 11887818Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.Type: GrantFiled: October 11, 2021Date of Patent: January 30, 2024Assignee: Applied Materials, Inc.Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
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Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool
Patent number: 11823871Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: GrantFiled: March 1, 2019Date of Patent: November 21, 2023Assignee: Applied Materials, Inc.Inventors: Jozef Kudela, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno, Avinash Shervegar, Kallol Bera, Xiaopu Li, Anantha K. Subramani, John C. Forster -
Publication number: 20230343552Abstract: Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Ravikumar Patil, Vijet Patil, Carlaton Wong, Adam J. Fischbach, Timothy Franklin, Tsutomu Tanaka, Canfeng Lai
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Patent number: 11776793Abstract: A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.Type: GrantFiled: November 13, 2020Date of Patent: October 3, 2023Assignee: Applied Materials, Inc.Inventors: Robert B. Moore, Jared Ahmad Lee, Marc David Shull, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno
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Publication number: 20230307213Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.Type: ApplicationFiled: June 5, 2023Publication date: September 28, 2023Applicant: Applied Materials, Inc.Inventors: Tsutomu Tanaka, Jared Ahmad Lee, Rakesh Ramadas, Dmitry A. Dzilno, Gregory J. Wilson, Sriharish Srinivasan
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Patent number: 11705312Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.Type: GrantFiled: December 26, 2020Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Tsutomu Tanaka, Jared Ahmad Lee, Rakesh Ramadas, Dmitry A. Dzilno, Gregory J. Wilson, Sriharish Srinivasan
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Patent number: 11699571Abstract: Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.Type: GrantFiled: September 8, 2020Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Ravikumar Patil, Vijet Patil, Carlaton Wong, Adam J. Fischbach, Timothy Franklin, Tsutomu Tanaka, Canfeng Lai
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Publication number: 20230107392Abstract: Methods of generating a plasma in a semiconductor processing chamber comprise: applying a radio frequency (RF) power to generate a plasma in a plasma region of the processing chamber, the processing chamber containing: a showerhead, an ion blocker plate, and a substrate, and the plasma region being defined by a front surface of the showerhead and a back surface of the ion blocker plate; and applying a bias the ion blocker plate so that there is no light-up in the processing chamber. Some methods further include dynamically tuning the bias by assessing conditions of light-up or no light-up and adjusting the bias. Some methods further include applying the bias zonally.Type: ApplicationFiled: October 1, 2021Publication date: April 6, 2023Applicant: Applied Materials, IncInventors: Kallol Bera, Xiaopu Li, Tsutomu Tanaka
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Publication number: 20220390783Abstract: It is an object of the present disclosure to dispose an optical element on a lower surface side of transistors without being influenced by heat treatment in a transistor forming process such that peeling, displacement, and the like do not easily occur. A transistor array substrate includes: a first substrate (110) including transistors (113) arranged in an array; and a second substrate (120) including an optical element (122), in which the transistors are arranged on a front surface side of the first substrate, and the second substrate is bonded to a back surface of the first substrate by plasma bonding treatment.Type: ApplicationFiled: October 19, 2020Publication date: December 8, 2022Inventors: KOICHI AMARI, KOICHI NAGASAWA, HITOSHI TSUNO, YOSHIHIKO KAJIYA, SHINTARO NAKANO, TSUYOSHI OKAZAKI, AKIKO TORIYAMA, YOSHITAKA YAGI, KEIICHI MAEDA, TAKASHI SAKAIRI, TSUTOMU TANAKA
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Publication number: 20220208531Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.Type: ApplicationFiled: December 26, 2020Publication date: June 30, 2022Applicant: Applied Materials, Inc.Inventors: Tsutomu Tanaka, Jared Ahmad Lee, Rakesh Ramadas, Dmitry A. Dzilno, Gregory J. Wilson, Sriharish Srinivasan
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Publication number: 20220165540Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.Type: ApplicationFiled: February 8, 2022Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20220157569Abstract: A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.Type: ApplicationFiled: November 13, 2020Publication date: May 19, 2022Applicant: Applied Materials, Inc.Inventors: Robert B. Moore, Jared Ahmad Lee, Marc David Shull, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno
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Publication number: 20220130713Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.Type: ApplicationFiled: October 23, 2020Publication date: April 28, 2022Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Tsutomu Tanaka, Adam J. Fischbach, Abhijit A. Kangude, Juan Carlos Rocha-Alvarez
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Patent number: 11315763Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.Type: GrantFiled: September 1, 2020Date of Patent: April 26, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Kallol Bera, Dmitry A. Dzilno, Anantha K. Subramani, John C. Forster, Tsutomu Tanaka
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Patent number: 11282676Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.Type: GrantFiled: June 18, 2019Date of Patent: March 22, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20220076920Abstract: Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.Type: ApplicationFiled: September 8, 2020Publication date: March 10, 2022Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Ravikumar Patil, Vijet Patil, Carlaton Wong, Adam J. Fischbach, Timothy Franklin, Tsutomu Tanaka, Canfeng Lai
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Publication number: 20220076922Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may be housed in a processing region of a semiconductor processing chamber. The processing region may be defined between a faceplate and a substrate support on which the semiconductor substrate is seated. The methods may include forming a treatment plasma within the processing region of the semiconductor processing chamber. The treatment plasma may be formed at a first power level from a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The methods may include densifying the flowable film within the feature defined within the semiconductor substrate with plasma effluents of the treatment plasma.Type: ApplicationFiled: September 8, 2020Publication date: March 10, 2022Applicant: Applied Materials, Inc.Inventors: Khokan Chandra Paul, Adam J. Fischbach, Tsutomu Tanaka, Canfeng Lai
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Publication number: 20220028660Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.Type: ApplicationFiled: October 11, 2021Publication date: January 27, 2022Applicant: Applied Materials, Inc.Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela A. Balseanu, Keiichi Tanaka, Li-Qun Xia
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Patent number: D951867Type: GrantFiled: January 30, 2020Date of Patent: May 17, 2022Assignee: Mitsubishi Electric CorporationInventors: Hiroyuki Kato, Shinichi Kato, Asuna Osawa, Tsutomu Tanaka, Masaaki Kadoyanagi, Shotaro Hirako, Takahiro Yamatani