Abstract: An image display apparatus includes an electronic circuit board having a light modulator; a holder with which at least a portion of the light modulator is in contact in a direction of an optical axis; and a supporter secured to the holder and in contact with the electronic circuit board in a state in which a gap is provided between the electronic circuit board and the holder along the direction of the optical axis.

Abstract: A lens unit includes a tube lens; a single lens arranged at a downstream side with respect to the tube lens in an optical incidence direction; and a supporting member that supports the tube lens and the single lens. Reflection light from a document is condensed on an image sensor by the tube lens and the single lens to form an image. An end surface part, not facing the tube lens, of the single lens is in direct contact with the supporting member.

Abstract: A light irradiation system for irradiating light to an irradiation area extending in a main scanning direction of a document face when placed on an image scanning apparatus includes a light source; a light guiding member to guide light emitted from the light source; and a reflector to reflect a part of light exiting from the light guiding member to the document face. The irradiation area is irradiated by the reflection light reflected by the reflector and a direct light exiting from the light guiding member without reflection at the reflector. The light guiding member includes an incidence surface where the light from the light source enters; and an exit surface where the light entered from the incidence surface exits. The reflector is disposed at a position in a direction that light intensity of light emitting from the light source becomes the strongest.

Abstract: A light irradiation device includes: a light source to output diffused light; and a light guide member to guide the diffused light to an irradiation point. The light guide member includes an incidence surface which the diffused light enters, a first emission surface to emit the entered diffused light, while further diffusing the entered diffused light with a first diffusion characteristic to emit the diffused light at a first diffusion angle, and a second emission surface to emit the entered diffused light, while further diffusing the entered diffused light with a second diffusion characteristics to emit the diffused light at a second diffusion angle. The second diffusion angle provided by the second diffusion characteristic is smaller than the first diffusion angle provided by the first diffusion characteristic.

Abstract: A lens unit includes a tube lens; a single lens arranged at a downstream side with respect to the tube lens in an optical incidence direction; and a supporting member that supports the tube lens and the single lens. Reflection light from a document is condensed on an image sensor by the tube lens and the single lens to form an image. An end surface part, not facing the tube lens, of the single lens is in direct contact with the supporting member.

Abstract: An light irradiation system for irradiating light a document face includes a light source; a light guiding member to guide light emitted from the light source; and a reflector to reflect a part of light exiting from the light guiding member to the document face. A direction that emission light intensity of the light emitted from the light source becomes the strongest is different from a direction extending from the light source to an irradiation area. The irradiation area is irradiated by a reflection light reflected by the reflector, and a direct light exiting from the light guiding member without reflection at the reflector. The light guiding member including an incidence surface, an exit surface, and a light guiding part including a total reflection face. Light quantity irradiated to the document face by reflection light is smaller than light quantity irradiated to the document face by direct light.

Abstract: A light irradiation device includes: a light source to output diffused light; and a light guide member to guide the diffused light to an irradiation point. The light guide member includes an incidence surface which the diffused light enters, a first emission surface to emit the entered diffused light, while further diffusing the entered diffused light with a first diffusion characteristic to emit the diffused light at a first diffusion angle, and a second emission surface to emit the entered diffused light, while further diffusing the entered diffused light with a second diffusion characteristics to emit the diffused light at a second diffusion angle. The second diffusion angle provided by the second diffusion characteristic is smaller than the first diffusion angle provided by the first diffusion characteristic.

Abstract: An illumination system includes a light source unit including light emitting elements arranged in array in a main scan direction to project light beams radially, and an optical guide of a long length made from a translucent material to guide incident beams from an exit surface of the light source unit in a certain direction for output, and including at least one surface with a diffuse structure to diffuse a transmitted beam or a reflected beam among the incident beams, wherein the diffuse structure is configured to diffuse the beam at a center at a larger divergence angle than at ends in the main scan direction.

Abstract: A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.

Abstract: An optical radiation device includes a long light source unit in which light emitting elements are arranged in array, a long substrate on which the light source unit is mounted, a long optical guide to guide the light beams from the light emitting elements to a predetermined plane, and an optical collector to collect the light beams reflected by the predetermined plane. The length of an effective read area from a reading center of the optical collector to one end of the predetermined plane is different from that of an effective read area from the reading center to the other end thereof. The optical guide formed by injection molding includes a gate at one end in a length direction and a surface at the other end to exert total reflection, and is disposed so that the gate is positioned on the a same side as a shorter effective read area.

Abstract: A light irradiation system for irradiating light to an irradiation area extending in a main scanning direction of a document face when placed on an image scanning apparatus includes a light source; a light guiding member to guide light emitted from the light source; and a reflector to reflect a part of light exiting from the light guiding member to the document face. The irradiation area is irradiated by the reflection light reflected by the reflector and a direct light exiting from the light guiding member without reflection at the reflector. The light guiding member includes an incidence surface where the light from the light source enters; and an exit surface where the light entered from the incidence surface exits. The reflector is disposed at a position in a direction that light intensity of light emitting from the light source becomes the strongest.

Abstract: An light irradiation system for irradiating light a document face includes a light source; a light guiding member to guide light emitted from the light source; and a reflector to reflect a part of light exiting from the light guiding member to the document face. A direction that emission light intensity of the light emitted from the light source becomes the strongest is different from a direction extending from the light source to an irradiation area. The irradiation area is irradiated by a reflection light reflected by the reflector, and a direct light exiting from the light guiding member without reflection at the reflector. The light guiding member including an incidence surface, an exit surface, and a light guiding part including a total reflection face. Light quantity irradiated to the document face by reflection light is smaller than light quantity irradiated to the document face by direct light.

Abstract: A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.

Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.

Abstract: An illumination system includes a light source unit including light emitting elements arranged in array in a main scan direction to project light beams radially, and an optical guide of a long length made from a translucent material to guide incident beams from an exit surface of the light source unit in a certain direction for output, and including at least one surface with a diffuse structure to diffuse a transmitted beam or a reflected beam among the incident beams, wherein the diffuse structure is configured to diffuse the beam at a center at a larger divergence angle than at ends in the main scan direction.

Abstract: An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

Abstract: There is provided a machine tool capable of housing workpieces of different sizes in a same workpiece storage unit without requiring a new workpiece storage unit. In a machine tool including a workpiece storage unit having a plurality of housing spaces housing workpieces and a processing machine processing a workpiece supplied from one of the housing spaces, the workpiece storage unit is structured so that the size of each housing space is changeable.

Abstract: An optical radiation device includes a long light source unit in which light emitting elements are arranged in array, a long substrate on which the light source unit is mounted, a long optical guide to guide the light beams from the light emitting elements to a predetermined plane, and an optical collector to collect the light beams reflected by the predetermined plane. The length of an effective read area from a reading center of the optical collector to one end of the predetermined plane is different from that of an effective read area from the reading center to the other end thereof. The optical guide formed by injection molding includes a gate at one end in a length direction and a surface at the other end to exert total reflection, and is disposed so that the gate is positioned on the a same side as a shorter effective read area.

Abstract: A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.

Abstract: A semiconductor laser element may include an n-type clad layer; an n-type waveguide layer adjacent to the n-type clad layer; an n-type carrier blocking layer adjacent to the n-type waveguide layer; an active layer; and a p-type clad layer adjacent to the active layer. The n-type clad layer may have a bandgap width greater than a bandgap width of the n-type waveguide layer. The n-type carrier blocking layer may have a bandgap width greater than or equal to bandgap widths of the first and second barrier layers. The p-type clad layer may have a bandgap width greater than the bandgap widths of the first and second barrier layers and the bandgap width of the n-type waveguide layer. The active layer may include a quantum well layer and barrier layers.