Abstract: A process for producing a molding having an embedded member which comprises: a first step in which a mold (1) having pins (3) which extend from the outside to the inside of the mold and can be withdrawn outward is heated to a given temperature; a second step in which a member (2) to be embedded is held in a given position within the mold by supporting the member, including an upper part thereof, with the pins (3); a third step in which a thermoplastic resin is packed through a gate (1d) first into that part of the cavity of the mold (1) which is located under the member to be embedded to thereby cause the thermoplastic resin to press the member against the pin (3) located in an upper part of the mold; a fourth step in which the thermoplastic resin is packed into the remaining part of the cavity of the mold (1); and a fifth step in which the pins (3) are withdrawn successively from the lower side of the mold before cooling to a temperature at which the thermoplastic resin solidifies and loses its flowability.

Abstract: A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.

Abstract: A ground coil device for a magnetic levitation railway that can be manufactured with a high productivity and exhibit less fluctuation in strength, reduced weight, and good recyclability, and a process for manufacturing the device. The ground coil device includes a coil conductor covered with a thermoplastic resin molding material containing 100 parts by mass of a thermoplastic resin, from 20 to 200 parts by mass of an inorganic filler, and from 0 to 25 parts by mass of an elastomer. A process for producing the ground coil device for magnetic levitation railway includes filling the thermoplastic resin molding material into a cavity of a metal mold into which the coil conductor is previously inserted, by an injection molding method, to obtain an integrally molded product.

Abstract: A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching.

Abstract: There is provided a machine tool capable of housing workpieces of different sizes in a same workpiece storage unit without requiring a new workpiece storage unit. In a machine tool including a workpiece storage unit having a plurality of housing spaces housing workpieces and a processing machine processing a workpiece supplied from one of the housing spaces, the workpiece storage unit is structured so that the size of each housing space is changeable.

Abstract: An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of <100>DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs.

Abstract: A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching.

Abstract: A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.

Abstract: An upper portion of a second clad layer and a contact layer are provided with grooves so as to form a ridge therebetween. An electrode is formed on the ridge. An insulation film is formed to extent on side surfaces of the ridge, on the inside of the grooves, and those portions of the contact layer which are located on the outside of the grooves. The thickness of those portions of the insulation film which are located on the contact layer in the areas on the outside of the grooves is set to be greater than at least the thickness of the electrode. Besides, a pad electrode is formed to cover the electrode and to extend on the insulation film on the upper side of the areas on the outside of the grooves. The upper surfaces of those portions of the pad electrode which are located on the upper side of the areas on the outside of the grooves are set to be above the upper surface of that portion of the pad electrode which is located on the upper side of the ridge.

Abstract: A process for producing a molding having an embedded member which comprises: a first step in which a mold (1) having pins (3) which extend from the outside to the inside of the mold and can be withdrawn outward is heated to a given temperature; a second step in which a member (2) to be embedded is held in a given position within the mold by supporting the member, including an upper part thereof, with the pins (3); a third step in which a thermoplastic resin is packed through a gate (1d) first into that part of the cavity of the mold (1) which is located under the member to be embedded to thereby cause the thermoplastic resin to press the member against the pin (3) located in an upper part of the mold; a fourth step in which the thermoplastic resin is packed into the remaining part of the cavity of the mold (1); and a fifth step in which the pins (3) are withdrawn successively from the lower side of the mold before cooling to a temperature at which the thermoplastic resin solidifies and loses its flowability.

Abstract: A ground coil device for a magnetic levitation railway that can be manufactured with a high productivity and exhibit less fluctuation in strength, reduced weight, and good recyclability, and a process for manufacturing the device. The ground coil device includes a coil conductor covered with a thermoplastic resin molding material containing 100 parts by mass of a thermoplastic resin, from 20 to 200 parts by mass of an inorganic filler, and from 0 to 25 parts by mass of an elastomer. A process for producing the ground coil device for magnetic levitation railway includes filling the thermoplastic resin molding material into a cavity of a metal mold into which the coil conductor is previously inserted, by an injection molding method, to obtain an integrally molded product.

Abstract: To provide a lathe in which a machined workpiece can be pulled out without fail, whereby realizing enhanced reliability in the pull-out operation. First and second tool posts 6, 7 are arranged to be capable of facing each other across a spindle axis A of a spindle headstock 4, and hold parts 30, 31 disposed on turrets 12, 13 of the first and second tool posts 6, 7 hold therebetween a machined workpiece W supported by the spindle headstock 4 to pull out the machined workpiece W from the spindle headstock 4.

Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.

Abstract: An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of <100>DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs.

Abstract: To provide a lathe in which a machined workpiece can be pulled out without fail, whereby realizing enhanced reliability in the pull-out operation. First and second tool posts 6, 7 are arranged to be capable of facing each other across a spindle axis A of a spindle headstock 4, and hold parts 30, 31 disposed on turrets 12, 13 of the first and second tool posts 6, 7 hold therebetween a machined workpiece W supported by the spindle headstock 4 to pull out the machined workpiece W from the spindle headstock 4.

Abstract: An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

Abstract: In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Abstract: A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: ?/d?1.3×10?3 nm?1 where ? and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.

Abstract: A semiconductor laser device comprises first current blocking layers formed to define a stripe-shaped current injected region extending in the direction in a front facet from which a laser light is emitted and a rear facet opposing thereto are connected, and a second current blocking layer formed to transverse the stripe-shaped current injected region in the vicinity of the front facet. The first current blocking layers and the second current blocking layer are made of the same layer. Accordingly, a current blocking structure is provided in the vicinity of the facet with the structure which is easily formed, causes no damage on the semiconductor laser device, and minimizes the property degradation, thereby a high facet COD level and high reliability in long-term continuous operations can be achieved.

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.