Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive particle; (b) an ionic oxidizer; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 1 to about 7, the abrasive particle has an isoelectric point that is higher than 8, and the ionic oxidizer has a negative charge at the pH of the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon carbide layer on a surface of the substrate, using said composition.

Abstract: A liquid ejecting apparatus includes a liquid ejection head to eject liquid, a recovery unit, a housing, a discharge unit, a casing including the discharge unit and the housing, and a liquid receptacle. The recovery unit maintains liquid ejecting performance of the liquid ejection head. The housing houses a container that accommodates liquid received by the recovery unit. The discharge unit discharges the liquid received by the recovery unit to the container. The liquid receptacle is disposed below the discharge unit in a direction of gravity in the casing and includes a first groove extending in a first direction crossing the direction of gravity and a second groove extending in a second direction crossing the direction of gravity and the first direction.

Abstract: A printing apparatus includes a liquid tank unit, a printing head, and a supply tube unit. The liquid tank unit includes first and second liquid tanks that store liquid and are arranged in parallel to each other. The printing head ejects liquid from the first and second tanks while moving in a main scanning direction. The supply tube unit includes a first supply tube connecting the first liquid tank to the printing head and includes a second supply tube coupled in parallel to the first supply tube and connecting the second liquid tank to the printing head. The second supply tube transitions from a connected tube state in which the second and first supply tubes are coupled in parallel to a single tube state by being separated from the first supply tube, passes across the first supply tube, and is connected to a connection port of the second liquid tank.

Abstract: Disclosed is a recording apparatus including a tank configured to store liquid to be supplied to a recording head that ejects the liquid, the tank including an inlet port for liquid injection; a cap unit including a shaft portion and a cap configured to turn about the shaft portion between a first position at which the cap caps the inlet port and a second position at which the cap does not cap the inlet port, the shaft portion being provided to a housing that encloses the tank; and a biasing unit configured to bias the cap unit in a direction to move the cap apart from the inlet port, wherein the cap unit does not move at the second position while being biased by the biasing unit.

Abstract: A liquid storage container includes a storage portion configured to store liquid, an opening portion provided on a first surface and configured to allow injection of the liquid into the storage portion, a receiving portion consisting of the first surface and a wall disposed around the opening portion on the first surface, and a liquid holding unit configured to hold the liquid guided by a guiding portion from the liquid receiving portion to outside of the liquid receiving portion. The liquid holding unit includes a second surface different from the first surface of the liquid storage container and a flexible member.

Abstract: A printing apparatus includes a support member configured to support a printhead that performs printing by discharging ink to a print medium, a connecting member including a connecting portion connected to an ink introduction portion of the printhead and through which the ink introduction portion communicates with an ink supply passage via the connecting portion, a rotation member configured to hold the connecting member such that a posture of the connecting member is changeable, and configured to be supported by the support member to be rotatable between a connecting position at which the ink introduction portion and the connecting portion are connected and a connection releasing position at which the ink introduction portion and the connecting portion are not connected, and a biasing portion configured to bias the connecting member to a first posture with respect to the rotation member.

Abstract: A semiconductor device such as, for example an imaging sensor, includes a semiconductor layer in which, for example, a photodiode may be formed. An insulation film is disposed on a surface of the semiconductor layer. The insulation film includes one or more wirings or wiring layers formed therein. A semiconductor support substrate is disposed on the insulation film. The semiconductor support substrate includes a first layer (or region) and a second layer (or region) that is between the insulation film and the first layer. The first layer has a bulk micro defect density that is higher than a bulk micro defect density of the second layer.

Abstract: There is provided a method of fabricating a semiconductor device, including grinding a first surface of a first semiconductor layer to generate a damage layer in a surface region of the first surface of the first semiconductor layer, polishing the damage layer to remove a portion with predetermined thickness of the damage layer; and etching the damage layer and the first semiconductor layer to remove the first semiconductor layer from a third surface of a second semiconductor layer, the third surface contacting to a second surface opposed to the first surface in the first semiconductor layer.

Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Abstract: According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an insulating film, on a surface of the semiconductor substrate including a surface exposed by the polishing.

Abstract: According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.

Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Abstract: According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an insulating film, on a surface of the semiconductor substrate including a surface exposed by the polishing.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

Abstract: This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric film; performing a second treatment of making a sidewall of the dielectric film formed by etching the dielectric film hydrophobic; and performing a third treatment of removing a silicon residue generated by etching the dielectric film.

Abstract: A residue treatment system includes a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching; a measurement unit which measures a characteristic amount of the etching fluid; and a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.

Abstract: The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.