Abstract: A semiconductor device includes: a first trench that is formed in a semiconductor substrate; a gate oxide film that is formed on a surface of the first trench; and a trench gate electrode that is formed so as to bury the first trench via the gate oxide film. The semiconductor device also includes: a second trench that is formed in the semiconductor substrate with a width wider than the width of the first trench; and a terminal-embedded insulation layer that is formed so as to bury the second trench. The semiconductor device further includes: a third trench that is formed in the semiconductor substrate with a width wider than the width of the second trench; and a trench contact electrode that is formed so as to bury the third trench.

Abstract: A semiconductor device comprises on a surface of a first semiconductor layer of the first conduction type a second semiconductor layer of the first conduction type. A semiconductor base layer of the second conduction type is formed on the second semiconductor layer, and a semiconductor diffusion layer of the first conduction type is formed on a surface of the semiconductor base layer. A trench is formed from the surface of the semiconductor diffusion layer to a depth reaching the second semiconductor layer. A gate electrode is formed of a conductor film buried in the trench with a gate insulator interposed therebetween. The conductor film includes a first conductor film formed along the gate electrode to have a recess and a second conductor film formed to fill the recess.

Abstract: There is provided a semiconductor device comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer of the first conductivity type; a semiconductor region of the first conductivity type selectively provided on a front surface portion of the second semiconductor layer of the second conductivity type; a first main electrode provided in contact with a surface of the semiconductor region; a second main electrode provided on a side of the first semiconductor layer of the first conductivity type, the side being opposite to the surface on which the second semiconductor layer of the second conductivity type is provided; a gate wiring provided on the second semiconductor layer of the second conductivity type around an element region in which the semiconductor region is provided; a trench penetrating the second semiconductor layer of the second conductivity type to reach the first semiconductor layer of the f

Abstract: A semiconductor device according to the present invention includes: a first trench that is formed in a semiconductor substrate; a gate oxide film that is formed on a surface of the first trench; and a trench gate electrode that is formed so as to bury the first trench via the gate oxide film. The semiconductor device also includes: a second trench that is formed in the semiconductor substrate with a width wider than the width of the first trench; and a terminal-embedded insulation layer that is formed so as to bury the second trench. The semiconductor device further includes: a third trench that is formed in the semiconductor substrate with a width wider than the width of the second trench; and a trench contact electrode that is formed so as to bury the third trench.

Abstract: A semiconductor device comprises on a surface of a first semiconductor layer of the first conduction type a second semiconductor layer of the first conduction type. A semiconductor base layer of the second conduction type is formed on the second semiconductor layer, and a semiconductor diffusion layer of the first conduction type is formed on a surface of the semiconductor base layer. A trench is formed from the surface of the semiconductor diffusion layer to a depth reaching the second semiconductor layer. A gate electrode is formed of a conductor film buried in the trench with a gate insulator interposed therebetween. The conductor film includes a first conductor film formed along the gate electrode to have a recess and a second conductor film formed to fill the recess.

Abstract: A lead wire connection terminal fitment capable of permitting a plurality of lead wires to be readily press-fitted in a single lead wire press fit groove. The terminal fitment may be in the form of a relay terminal fitment, which includes a metal plate formed with a lead wire press fit groove by machining in which lead wires are press-fitted. A pair of inner surfaces of the metal plate defining the lead wire press fit groove therebetween are formed thereon with a plurality of projections and recesses engaged with an outer periphery of lead wires. The projections biting into the lead wires are so arranged that a space defined between the projections opposite to each other is reduced in width at a position thereof spaced by a distance in a depth direction of the lead wire press fit groove, resulting in being divided into a first space portion increased in width and a second space portion decreased in width.

Abstract: A high-voltage variable resistor capable of significantly reducing a circuit board as compared with a prior art. Terminal fitments each are arranged so as to function as a connector for forming electrical connection between a slide element slid on each of variable resistance patterns and a terminal acting as an output section. A contact point between a contact on a contact support of the terminal fitment and a plate-like member of the slide element is positioned apart from a surface of the circuit board. The terminal fitment includes a positioner, which is positioned outside the pattern in a radial direction thereof, so that the positioner intersects the pattern while being spaced therefrom.

Abstract: An electrostatic image-bearing dielectric member comprises a support and a dielectric layer formed on the support. The dielectric layer is formed of at least one of amorphous carbon, diamond-like carbon and diamond. The dielectric layer may contain not larger than 60 atomic percent of at least one of hydrogen and fluorine. An intermediate layer may be provided between the support and the dielectric layer in order to improve the adhesion therebetween.

Abstract: In an electrophotographic system, an electrostatic latent image as formed on a photoreceptor is developed with a developing agent to form a toner image thereon, a transfer paper is laid over the toner image and pressure is applied to the photoreceptor and the transfer paper so as to transfer or simultaneously transfer and fix the toner image onto the transfer paper. The photoreceptor is one having a surface protecting layer and a light-sensitive layer made of a hydrogenated and/or fluorinated amorphous silicon. The light-sensitive layer and the surface protecting layer of the photoreceptor are uniformly heated to a constant temperature. A charging device or a discharging brush or blade is used as a device of discharging the charges of the photoreceptor after the transference.

Abstract: A bias circuit for applying a bias voltage to an avalanche photodiode APD2 for detecting light comprises a first diode APD1, a power supply V.sub.H connected to the first diode APD1, for applying a voltage to make the diode in breakdown between an anode and a cathode of the first diode APD1, and a constant voltage circuit V2 connected to the avalanche photodiode APD2 for detecting light, for applying a voltage difference of a breakdown voltage generated between the anode and the cathode of the first diode APD1 minus a constant voltage to the avalanche photodiode. The constant voltage is substantially independent from current flowing in the avalanche photodiode APD2 for detecting light to the avalanche photodiode.

Abstract: An electrophotographic photoreceptor comprising: an electrically conductive substrate, a charge injection blocking layer formed on said electrically conductive substrate, a photoconductive layer comprising a single layer formed on said charge injection blocking layer, said photoconductive layer comprising amorphous silicon containing boron, a positive hole capturing layer formed on said photoconductive layer, said positive hole capturing layer being selected from the group comprising amorphous silicon containing less than 50 ppm boron and amorphous silicon being substantially composed of hydrogen and silicon atoms, and a surface layer formed on said positive hole capturing layer. The boron concentration contained in said photoconductive layer is 0.01-1000 ppm. The surface layer is formed by amorphous silicon nitride, amorphous silicon oxide, amorphous silicon carbide or amorphous carbon as a main body. The charge injection blocking layer has amorphous silicon as a main body and contains a group V element.

Abstract: A photodetecting circuit using an avalanche photodiode of the present invention has an avalanche photodiode, and a bias control means for applying a bias voltage to the avalanche photodiode to drive the avalanche photodiode at a high multiplication factor. The bias control means has a diode having the same temperature dependence of a breakdown voltage as that of the avalanche photodiode, and a control circuit for applying positive and negative potentials with respect to the ground potential between the anode and the cathode of the diode such that the diode is set in a breakdown state at a predetermined current. A positive or negative potential is applied from one of the anode and the cathode of the avalanche photodiode as a bias voltage, and a photocurrent is output from the other terminal of the avalanche photodiode.

Abstract: A high-voltage variable resistor includes a terminal fitment having an increased number of edge elements while being simplified in structure and down-sized. A circuit substrate which includes a circuit pattern having a plurality of electrodes and resistor elements formed thereon is received in a substrate receiving section of an insulating casing. The insulating casing is charged with insulating resin through an opening thereof to form an insulating resin layer on a rear surface of the circuit substrate. Terminal fitments are provided each of which includes a core holding section provided with three or more edge elements biting into a periphery of a core of a lead wire inserted thereinto. The edge elements each are formed between each adjacent two of three or more slits formed at a plate-like section of the terminal fitment so as to radially extend from a center thereof.

Abstract: An electrophotographic photoreceptor for positive electrification comprising at least an electroconductive layer, a charge injection blocking layer, a photoconductive layer and a surface layer. The photoconductive layer comprises a layer having an amorphous silicon layer containing one or more of hydrogen, halogen and a Group III element for controlling electroconductivity and layer having an amorphous silicon germanium layer containing at least hydrogen, halogen and a Group III element. The charge injection blocking layer comprises an amorphous silicon layer containing hydrogen and a Group III element in an amount of equal or less than 1000 ppm. The electrophotographic photoreceptor has excellent electrification characteristics with dark and light sensitivities, stability against repetitive use and may be utilized as a photoreceptor for a semiconductor laser beam printer.

Abstract: A process for the preparation of an ethylenic polymer composition having excellent physical properties such as high impact properties, environmental stress cracking resistance, pinch-off fusing characteristics and having an intrinsic viscosity ranging from 3.2 to 4.5 dl/g and a density ranging from 0.943 g/cm.sup.3 to 0.958 g/cm.sup.3.

Abstract: A negative-charging electrophotographic photoreceptor comprising an electrically conductive support having consecutively thereon (a) a charge injection prevention layer having a thickness of from 0.15 to 10 .mu.m, (b) a photoconductive layer, and (c) a surface layer, the charge injection prevention layer (a) comprising amorphous silicon containing at least one of a hydrogen atom and a halogen atom, and containing a nitrogen atom in an atomic ratio of from 0.01 to 0.65 to the silicon atom, the photoconductive layer (b) comprising amorphous silicon containing at least one of a hydrogen atom and a halogen atom.

Abstract: An electorphotographic photoreceptor comprises an electroconductive support at least whose indentation hardness of surface is 100 and over on the Vickers hardness scale; a photoconductive layer comprising amorphous silicon containing at least one of hydrogen and halogen; and a surface layer comprising at least one of an amorphous silicon layer containing at least one of nitrogen, oxygen, and carbon, and an amorphous carbon layer containing at least one of not exceeding 50 atm. % of hydrogen and halogen. This photoreceptor is long-lived and causing no image defects that would otherwise develop in connection with the support, and it can be applied to an energy-saving, low-cost and highly reliable electrophotographic process and apparatus.