Abstract: The work vehicle includes a vehicle body provided with a travel device; a prime mover provided in the vehicle body; a transmission device capable of speed-changing a driving force from the prime mover and transmitting the driving force to the travel device; a transmission case housing the transmission device and being filled with lubricating oil; and a controller capable of switching between a warm-up operation mode in which a gear of the transmission device is rotated in a state in which transmission of power from the transmission device to the travel device is blocked and a travel operation mode in which the gear is rotated in a state in which the power is transmitted from the transmission device to the travel device.

Abstract: A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.

Abstract: Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.

Abstract: In a vehicle-body structure of a vehicle, where suspension forming members are attached to a vehicle body, there are provided a first face portion, through which the suspension forming member extends, a second face portion provided to face to the first face portion, and a support member provided between the first face portion and the second face portion and supporting the suspension forming members, and the support member is joined to said second face portion via a reinforcing member which is formed integrally with the support member or formed separately from the support member. Accordingly, vibrations of the support member can be properly restrained.

Abstract: In a vehicle-body structure of a vehicle which comprises at least one vehicle-body forming member forming a closed-section portion continuously in a specified direction, a partition member extending in the specified direction and partitioning an inside of the closed-section portion, and a bulkhead provided in the closed-section portion and joined to the vehicle-body forming member, the bulkhead is joined to an inner face of the vehicle-body forming member at specified positions which are located on both sides of the partition member, and the bulkhead is joined to a specified portion of the partition member which is located in the vicinity of opening portions formed at the partition member or to an end portion of the partition member in the specified direction.

Abstract: In a vehicle-body structure of a vehicle which comprises vehicle-body forming members forming a closed-section portion and having a dent portion which dents toward an inside of the closed-section portion, and a reinforcing member provided in the closed-section portion and joined to the vehicle-body forming members, a joint portion of the vehicle-body forming members and the reinforcing member includes a rigid joint portion where the vehicle-body forming members and the reinforcing member are joined with a direct contact thereof and a flexible joint portion where the vehicle-body forming members and the reinforcing member are joined via a damping member provided therebetween, and this joint portion is provided at or in the vicinity of the dent portion.

Abstract: In a frame having a closed-section portion which is formed by joining a first member having a U-shaped section and a second member having a flat-plate shape, a bulkhead is provided in the closed-section portion as a reinforcing member, flanges of the bulkhead and the first and second members are joined with a rigid joint portion where they are joined by a spot welding and a flexible joint portion where they are joined via a damping member. Thereby, transmission of vibrations can be properly restrained, improving the rigidity of the portion having the closed-section portion.

Abstract: Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.

Abstract: A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.

Abstract: In a frame having a closed-section portion which is formed by joining a first member having a U-shaped section and a second member having a flat-plate shape, a bulkhead is provided in the closed-section portion as a reinforcing member, flanges of the bulkhead and the first and second members are joined with a rigid joint portion where they are joined by a spot welding and a flexible joint portion where they are joined via a damping member. Thereby, transmission of vibrations can be properly restrained, improving the rigidity of the portion having the closed-section portion.

Abstract: In a vehicle-body structure of a vehicle which comprises at least one vehicle-body forming member forming a closed-section portion continuously in a specified direction, a partition member extending in the specified direction and partitioning an inside of the closed-section portion, and a bulkhead provided in the closed-section portion and joined to the vehicle-body forming member, the bulkhead is joined to an inner face of the vehicle-body forming member at specified positions which are located on both sides of the partition member, and the bulkhead is joined to a specified portion of the partition member which is located in the vicinity of opening portions formed at the partition member or to an end portion of the partition member in the specified direction.

Abstract: In a vehicle-body structure of a vehicle, where suspension forming members are attached to a vehicle body, there are provided a first face portion, through which the suspension forming member extends, a second face portion provided to face to the first face portion, and a support member provided between the first face portion and the second face portion and supporting the suspension forming members, and the support member is joined to said second face portion via a reinforcing member which is formed integrally with the support member or formed separately from the support member. Accordingly, vibrations of the support member can be properly restrained.

Abstract: In a vehicle-body structure of a vehicle which comprises a frame comprised of vehicle-body forming members forming a closed-section portion, a reinforcing member provided in the closed-section portion and joined to the frame, and another vehicle-body forming member joined to an outer face of the frame, which is different from the vehicle-body forming members of the frame, a joint portion of the frame and the reinforcing member includes a rigid joint portion where the frame and the reinforcing member are joined with a direct contact thereof and a flexible joint portion where the frame and the reinforcing member are joined via a damping member provided therebetween, and the joint portion is provided at a specified position on an inner face of the frame located in the vicinity of a portion where the forming member is joined to the frame.

Abstract: In a vehicle-body structure of a vehicle which comprises vehicle-body forming members forming a closed-section portion and having a dent portion which dents toward an inside of the closed-section portion, and a reinforcing member provided in the closed-section portion and joined to the vehicle-body forming members, a joint portion of the vehicle-body forming members and the reinforcing member includes a rigid joint portion where the vehicle-body forming members and the reinforcing member are joined with a direct contact thereof and a flexible joint portion where the vehicle-body forming members and the reinforcing member are joined via a damping member provided therebetween, and this joint portion is provided at or in the vicinity of the dent portion.

Abstract: There is provided a lubricating structure of a planetary gear mechanism which can simplify the outer shape of an introducing section formed by an oil catch plate, for introducing lubricating oil, and ensure a high degree of design freedom. In a double pinion type planetary gear mechanism, the distance from the axis of a carrier to the outermost edge of an opening in the direction of the carrier's diameter in an lubricating oil introducing hole formed in an outer diameter side pinion shaft and the distance from the axis of the carrier to the outermost edge of an opening in the direction of the carrier's diameter in an lubricating oil introducing hole formed in an inner diameter side pinion shaft are equal to each other. Therefore, lubricating oil can be supplied to the inner diameter side pinion shaft through the introducing section irrespective of the amount of lubricating oil that can be supplied to the outer diameter side pinion shaft.

Abstract: The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

Abstract: Disclosed is a sound-absorbing material, which has a flow resistivity R of 3.3×104 N·s/m4 or more, a Young's modulus E of 1.2×103 to 2.0×104 N/m2, and a loss factor ? of 0.12 or less. The sound-absorbing material of the present invention can enhance a sound absorption capability in a wide range of a low/intermediate-frequency region to a high-frequency region at a higher level as compared with conventional sound-absorbing materials.

Abstract: Disclosed is a sound-absorbing material, which has a flow resistivity R of 3.3×104 N·s/m4 or more, a Young's modulus E of 1.2×103 to 2.0×104 N/m2, and a loss factor ? of 0.12 or less. The sound-absorbing material of the present invention can enhance a sound absorption capability in a wide range of a low/intermediate-frequency region to a high-frequency region at a higher level as compared with conventional sound-absorbing materials.

Abstract: The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

Abstract: The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.