Patents by Inventor Tsuyoshi Sugiura
Tsuyoshi Sugiura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11941322Abstract: Provided is a display control device including: a voice receiver configured to receive a voice utterance from a user; a communication unit configured to receive information for the voice utterance from a server via a network; and a controller configured to select an item corresponding to the voice utterance on the basis of the information that has been received, and configured to control an action in response to the item that has been selected, in which the item includes a first item in an inside of a display screen and a second item that becomes displayable by scrolling, and the controller selects either the first item or the second item on the basis of the information that has been received. The present technology is applicable to, for example, a television receiver.Type: GrantFiled: December 13, 2019Date of Patent: March 26, 2024Assignee: Saturn Licensing LLCInventors: Takuo Watanabe, Nobuhiro Ozu, Tsuyoshi Yamada, Shunichi Sugiura, Naoki Saito
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Patent number: 11362623Abstract: A voltage-controlled oscillator includes a first transistor, a second transistor, an inductive impedance element, a first variable capacitive impedance element, and a second variable capacitive impedance element. The first transistor has a source coupled to a first power source, a drain coupled to a first node, and a gate coupled to a second node. The second transistor has a source coupled to the first power source, a drain coupled to the second node, and a gate coupled to the first node. The inductive impedance element has a first terminal coupled to the first node and a second terminal coupled to the second node. The first variable capacitive impedance element has a first terminal coupled to the first node and a second terminal coupled to a third node. The second variable capacitive impedance element has a first terminal coupled to the second node and a second terminal coupled to the third node.Type: GrantFiled: October 28, 2020Date of Patent: June 14, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Toshihiko Yoshimasu, Kouki Tanji, Tsuyoshi Sugiura
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Patent number: 11043919Abstract: A power amplifier includes a first bias circuit including a first and third transistor, a first sub-bias circuit, and an amplifying circuit including a fourth transistor. In the first bias circuit, a second terminal of the first transistor and a second terminal of the first sub-bias circuit are grounded, a control terminal of the first transistor is connected to a control terminal of the first sub-bias circuit, a first terminal of the first sub-bias circuit is connected to a constant voltage terminal, a first terminal of the first transistor is connected to a second terminal of the third transistor, a first terminal of the third transistor is connected to a control terminal of the third transistor. The amplifying circuit amplifies an input signal power based on a first bias signal from the first bias circuit to a control terminal of the fourth transistor.Type: GrantFiled: July 26, 2019Date of Patent: June 22, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Toshihiko Yoshimasu, Tadamasa Murakami, Tsuyoshi Sugiura
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Publication number: 20210167727Abstract: A voltage-controlled oscillator includes a first transistor, a second transistor, an inductive impedance element, a first variable capacitive impedance element, and a second variable capacitive impedance element. The first transistor has a source coupled to a first power source, a drain coupled to a first node, and a gate coupled to a second node. The second transistor has a source coupled to the first power source, a drain coupled to the second node, and a gate coupled to the first node. The inductive impedance element has a first terminal coupled to the first node and a second terminal coupled to the second node. The first variable capacitive impedance element has a first terminal coupled to the first node and a second terminal coupled to a third node. The second variable capacitive impedance element has a first terminal coupled to the second node and a second terminal coupled to the third node.Type: ApplicationFiled: October 28, 2020Publication date: June 3, 2021Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Toshihiko Yoshimasu, Kouki Tanji, Tsuyoshi Sugiura
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Patent number: 10908276Abstract: An object detection method and apparatus is disclosed, where the object detection method includes determining a weather condition based on a noise floor measured in an elevated direction, and detecting an object based on comparing a signal level of a target signal measured in a depressed direction and a threshold level corresponding to the determined weather condition.Type: GrantFiled: May 30, 2018Date of Patent: February 2, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jaesup Lee, SungDo Choi, Tsuyoshi Sugiura, DongHan Kim
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Publication number: 20200036340Abstract: A power amplifier includes a first bias circuit including a first and third transistor, a first sub-bias circuit, and an amplifying circuit including a fourth transistor. In the first bias circuit, a second terminal of the first transistor and a second terminal of the first sub-bias circuit are grounded, a control terminal of the first transistor is connected to a control terminal of the first sub-bias circuit, a first terminal of the first sub-bias circuit is connected to a constant voltage terminal, a first terminal of the first transistor is connected to a second terminal of the third transistor, a first terminal of the third transistor is connected to a control terminal of the third transistor. The amplifying circuit amplifies an input signal power based on a first bias signal from the first bias circuit to a control terminal of the fourth transistor.Type: ApplicationFiled: July 26, 2019Publication date: January 30, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Toshihiko Yoshimasu, Tadamasa Murakami, Tsuyoshi Sugiura
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Publication number: 20190196008Abstract: An object detection method and apparatus is disclosed, where the object detection method includes determining a weather condition based on a noise floor measured in an elevated direction, and detecting an object based on comparing a signal level of a target signal measured in a depressed direction and a threshold level corresponding to the determined weather condition.Type: ApplicationFiled: May 30, 2018Publication date: June 27, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Jaesup LEE, SungDo CHOI, Tsuyoshi SUGIURA, DongHan KIM
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Publication number: 20180152154Abstract: A radio frequency power amplifier includes: a transistor configured to amplify a signal at a selected signal frequency; a first line connected to an output of the transistor and disposed on a printed circuit board; and a second line and a third line branched from a rear stage of the first line and disposed on the printed circuit board. The second line is configured to set impedance for the selected signal frequency or a double-wave frequency of the selected signal frequency.Type: ApplicationFiled: November 28, 2017Publication date: May 31, 2018Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tadamasa MURAKAMI, Tsuyoshi SUGIURA, Koki TANJI, Norihisa OTANI, Satoshi FURUTA
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Patent number: 9065164Abstract: There is provided a high frequency switch which is satisfactory in terms of both insertion loss characteristics and harmonic characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units includes a plurality of series-connected MOSFETs formed on a silicon substrate, the plurality of MOSFETs are any one of body contact-type FETs and floating body-type FETs, and each of the switching units includes both of the body contact-type FETs and the floating body-type FETs.Type: GrantFiled: April 7, 2014Date of Patent: June 23, 2015Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Tsuyoshi Sugiura
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Patent number: 9035716Abstract: There is provided a high frequency switch having a reduced circuit scale while maintaining satisfactory harmonic characteristics in a transfer path of a high frequency signal. The high frequency switch includes: at least one transmission port; at least one reception port; a common port; transmission side series switches each including a body contact type FET; transmission side shunt switches each including a body contact type FET; reception side series switches each including a body contact type FET; and reception side shunt switches each including at least one floating body type FET.Type: GrantFiled: January 20, 2012Date of Patent: May 19, 2015Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Koki Tanji, Tsuyoshi Sugiura
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Patent number: 8818298Abstract: There is provided a high frequency switch formed on an SOI substrate and having improved insertion loss characteristics in a multimode system. The high frequency switch includes: at least one first port; at least one second port; a common port; a first series switch; and a second series switch.Type: GrantFiled: January 20, 2012Date of Patent: August 26, 2014Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Tsuyoshi Sugiura
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Publication number: 20140218126Abstract: There is provided a high frequency switch which is satisfactory in terms of both insertion loss characteristics and harmonic characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units includes a plurality of series-connected MOSFETs formed on a silicon substrate, the plurality of MOSFETs are any one of body contact-type FETs and floating body-type FETs, and each of the switching units includes both of the body contact-type FETs and the floating body-type FETs.Type: ApplicationFiled: April 7, 2014Publication date: August 7, 2014Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventor: Tsuyoshi SUGIURA
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Patent number: 8779840Abstract: There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.Type: GrantFiled: January 20, 2012Date of Patent: July 15, 2014Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tsuyoshi Sugiura, Eiichiro Otobe, Koki Tanji, Norihisa Otani
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Patent number: 8729948Abstract: There is provided a high frequency switch which is satisfactory in terms of both insertion loss characteristics and harmonic characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units includes a plurality of series-connected MOSFETs formed on a silicon substrate, the plurality of MOSFETs are any one of body contact-type FETs and floating body-type FETs, and each of the switching units includes both of the body contact-type FETs and the floating body-type FETs.Type: GrantFiled: January 20, 2012Date of Patent: May 20, 2014Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Tsuyoshi Sugiura
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Patent number: 8674415Abstract: There is provided a high frequency semiconductor switch for improving insertion loss characteristics and harmonic characteristics by providing good voltage distribution in a gate wiring. The field effect transistor includes a source wiring electrically connected to a source region formed on a substrate and extending unidirectionally; a drain wiring electrically connected to a drain region formed on the substrate and extending in parallel with the source wiring; a gate having a parallel portion extending between the source wiring and the drain wiring in approximately parallel with the source wiring and the drain wiring; a gate wiring applying voltage to the gate; and a gate via electrically connecting the gate to the gate wiring, the parallel portion including two ends and formed with a path applying voltage to each of the two ends from the gate via.Type: GrantFiled: January 20, 2012Date of Patent: March 18, 2014Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Tsuyoshi Sugiura
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Publication number: 20130187728Abstract: There is provided a high frequency switch having a reduced circuit scale while maintaining satisfactory harmonic characteristics in a transfer path of a high frequency signal. The high frequency switch includes: at least one transmission port; at least one reception port; a common port; transmission side series switches each including a body contact type FET; transmission side shunt switches each including a body contact type FET; reception side series switches each including a body contact type FET; and reception side shunt switches each including at least one floating body type FET.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Inventors: Koki Tanji, Tsuyoshi Sugiura
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Publication number: 20130187702Abstract: There is provided a high frequency switch which is satisfactory in terms of both insertion loss characteristics and harmonic characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units includes a plurality of series-connected MOSFETs formed on a silicon substrate, the plurality of MOSFETs are any one of body contact-type FETs and floating body-type FETs, and each of the switching units includes both of the body contact-type FETs and the floating body-type FETs.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Inventor: Tsuyoshi SUGIURA
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Publication number: 20130188650Abstract: There is provided a high frequency switch formed on an SOI substrate and having improved insertion loss characteristics in a multimode system. The high frequency switch includes: at least one first port; at least one second port; a common port; a first series switch; and a second series switch.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Inventor: Tsuyoshi SUGIURA
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Publication number: 20130187204Abstract: There is provided a high frequency semiconductor switch for improving insertion loss characteristics and harmonic characteristics by providing good voltage distribution in a gate wiring. The field effect transistor includes a source wiring electrically connected to a source region formed on a substrate and extending unidirectionally; a drain wiring electrically connected to a drain region formed on the substrate and extending in parallel with the source wiring; a gate having a parallel portion extending between the source wiring and the drain wiring in approximately parallel with the source wiring and the drain wiring; a gate wiring applying voltage to the gate; and a gate via electrically connecting the gate to the gate wiring, the parallel portion including two ends and formed with a path applying voltage to each of the two ends from the gate via.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Inventor: Tsuyoshi SUGIURA
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Patent number: 8482337Abstract: There is provided a high frequency semiconductor switch having an FET designed in consideration of characteristics required for a transmission terminal and a reception terminal. The high frequency semiconductor switch includes a plurality of field effect transistors that each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate to be disposed at the predetermined distance, a source contact formed on the substrate to be connected with the source region, and a drain contact formed on the substrate to be connected with the drain region. A distance between a source contact and a drain contact of a reception terminal side transistor is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor.Type: GrantFiled: January 20, 2012Date of Patent: July 9, 2013Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Tsuyoshi Sugiura