Abstract: There is provided a high frequency semiconductor switch having an FET designed in consideration of characteristics required for a transmission terminal and a reception terminal. The high frequency semiconductor switch includes a plurality of field effect transistors that each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate to be disposed at the predetermined distance, a source contact formed on the substrate to be connected with the source region, and a drain contact formed on the substrate to be connected with the drain region. A distance between a source contact and a drain contact of a reception terminal side transistor is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor.

Abstract: There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.

Abstract: There is provided a high frequency semiconductor switch having an FET designed in consideration of characteristics required for a transmission terminal and a reception terminal. The high frequency semiconductor switch includes a plurality of field effect transistors that each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate to be disposed at the predetermined distance, a source contact formed on the substrate to be connected with the source region, and a drain contact formed on the substrate to be connected with the drain region. A distance between a source contact and a drain contact of a reception terminal side transistor is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor.

Abstract: A wireless transmitter and receiver increase a desired/unwanted (D/U) ratio of a correlation output without increasing the number of data in an ultra-wideband direct spread pulse communication system for transmitting and receiving two series of data through different spreading code streams. In the spreading codes used in matched filters of the wireless transmitter, (2*N?2)-th and (2*N)-th values of a cross-correlation signal between first and second spreading codes are greater than 0, (2*N?3)-th and (2*N+1)-th values of an auto-correlation signal of the first spreading code are less than 0, and (2*N?3)-th and (2*N+1)-th values of an auto-correlation signal of the second spreading code are less than 0. The peak value of the cross-correlation signal does not need to be small, and since a value other than the peak value does not become large, the D/U ratio can increase.

Abstract: A complex coefficient transversal filter using a SAW filter and a complex frequency converter using the complex coefficient transversal filter are provided, in which a first SAW filter receives a real signal as an input signal and generates a real component of a complex signal, and a second SAW filter receives the real signal as an input signal and generates an imaginary component of the complex signal. Accordingly, feed-through waves between the input and output stages can be cancelled, and a phase difference between real and imaginary signals can be maintained at 90° without a phase shift. In addition, when a low-IF frequency converter is implemented using the complex coefficient transversal filter, an image suppression characteristic is improved. When a zero-IF frequency converter is implemented using the complex coefficient transversal filter, an error vector magnitude (EVM) characteristic is improved.

Abstract: A recorded medium feeding device includes a pickup roller that feeds recorded medium downstream from a setting position by contacting with the recorded medium and rotating and a separating means for separating recorded medium to be fed and subsequent recorded media from the next page onward. The positions of a nip point of the separating means and a place where the pickup roller contacts the recorded medium in the direction orthogonal to the recorded medium feeding direction with respect to a recorded medium of a predetermined size to be fed by the pickup roller are located within a range deviated to one side from the center of the recorded medium of the predetermined size. A path elongating portion that elongates the feed path length of the recorded medium by abutting the recorded medium is apart from the nip point and the place where the pickup roller contacts the recorded medium.

Abstract: A recorded medium feeding device includes a pickup roller that feeds recorded medium dowstream from a setting position by contacting with the recorded medium and rotating and a separating means for separating recorded medium to be fed and subsequent recorded media from the next page onward. The positions of a nip point of the separating means and a place where the pickup roller contacts the recorded medium in the direction orthogonal to the recorded medium feeding direction with respect to a recorded medium of a predetermined size to be fed by the pickup roller are located within a range deviated to one side from the center of the recorded medium of the predetermined size. A path elongating portion that elongates the feed path length of the recorded medium by abutting the recorded medium is apart from the nip point and the place where the pickup roller contacts the recorded medium.

Abstract: A complex coefficient transversal filter using a SAW filter and a complex frequency converter using the complex coefficient transversal filter are provided, in which a first SAW filter receives a real signal as an input signal and generates a real component of a complex signal, and a second SAW filter receives the real signal as an input signal and generates an imaginary component of the complex signal. Accordingly, feed-through waves between the input and output stages can be cancelled, and a phase difference between real and imaginary signals can be maintained at 90° without a phase shift. In addition, when a low-IF frequency converter is implemented using the complex coefficient transversal filter, an image suppression characteristic is improved. When a zero-IF frequency converter is implemented using the complex coefficient transversal filter, an error vector magnitude (EVM) characteristic is improved.

Abstract: A SAW oscillator is provided that can prevent an increased parasitic capacitance or an increased parasitic inductance even in the high frequency range. The SAW oscillator includes a semiconductor integrated circuit, a SAW device, and a passive component within a package. The semiconductor integrated circuit, the passive component, and the SAW device are disposed adjacent to an in parallel with each other along a straight line.

Abstract: A wireless transmitter and receiver increase a desired/unwanted (D/U) ratio of a correlation output without increasing the number of data in an ultra-wideband direct spread pulse communication system for transmitting and receiving two series of data through different spreading code streams. In the spreading codes used in matched filters of the wireless transmitter, (2*N?2)-th and (2*N)-th values of a cross-correlation signal between first and second spreading codes are greater than 0, (2*N?3)-th and (2*N+1)-th values of an auto-correlation signal of the first spreading code are less than 0, and (2*N?3)-th and (2*N+1)-th values of an auto-correlation signal of the second spreading code are less than 0. The peak value of the cross-correlation signal does not need to be small, and since a value other than the peak value does not become large, the D/U ratio can increase.

Abstract: A SAW apparatus is provided capable of realizing a small size without adverse affect while mounting the active surfaces of the semiconductor integrated circuit and the surface acoustic wave element. The SAW apparatus comprises a semiconductor IC and a SAW element. The semiconductor IC is flip-chip mounted on a bottom of the package, a non-active surface of the SAW element is bonded to a non-active surface of the semiconductor IC by using an adhesive, and an electrode portion arranged in the active surface is wire-bonded to an electrode pattern formed on the side walls of the package by using wires.

Abstract: A SAW apparatus is provided capable of realizing a small size without adverse affect while mounting the active surfaces of the semiconductor integrated circuit and the surface acoustic wave element. The SAW apparatus comprises a semiconductor IC and a SAW element. The semiconductor IC is flip-chip mounted on a bottom of the package, a non-active surface of the SAW element is bonded to a non-active surface of the semiconductor IC by using an adhesive, and an electrode portion arranged in the active surface is wire-bonded to an electrode pattern formed on the side walls of the package by using wires.

Abstract: A SAW oscillator is provided that can prevent an increased parasitic capacitance or an increased parasitic inductance even in the high frequency range. The SAW oscillator includes a semiconductor integrated circuit, a SAW device, and a passive component within a package. The semiconductor integrated circuit, the passive component, and the SAW device are disposed adjacent to an in parallel with each other along a straight line.

Abstract: A mounting pad provided on an insulating substrate and comprising an electrically conductive pattern electrically joined with an electronic component and/or a bonding wire connected to an electronic component. The electrically conductive pattern comprises a plurality of metalized layers stacked on one another. By this structure, an electrically conductive adhesive for joining electronic components with mounting pads can be prevented from flowing out from the joining section therebetween to prevent a short-circuit of the mounting pads, or to prevent an interference with the wire-bonding by covering the bonding area.