Abstract: Products, compositions, systems, and methods for modifying a target structure which mediates or is associated with a biological activity, including treatment of conditions, disorders, or diseases mediated by or associated with a target structure, such as a virus, cell, subcellular structure or extracellular structure. The methods may be performed in situ in a non-invasive manner by placing a nanoparticle having a metallic shell on at least a fraction of a surface in a vicinity of a target structure in a subject and applying an initiation energy to a subject thus producing an effect on or change to the target structure directly or via a modulation agent. The nanoparticle is configured, upon exposure to a first wavelength ?1, to generate a second wavelength ?2 of radiation having a higher energy than the first wavelength ?1.

Abstract: Plasmonics-active nanoprobes are provided for detection of target biomolecules including nucleic acids, proteins, and small molecules. The nucleic acids that can be detected include RNA, DNA, mRNA, microRNA, and small nucleotide polymorphisms (SNPs). The nanoproprobes can be used in vito in sensitive detection methods for diagnosis of diseases and disorders including cancer. Multiplexing can be performed using the nanoprobes such that multiple targets can be detected simultaneously in a single sample. The methods of use of the nanoprobes include detection by a visible color change. The nanoprobes can be used in vivo for treatment of undesireable cells in a subject.

Abstract: The use of plasmonics enhanced photospectral therapy (PEPST) and exiton-plasmon enhanced phototherapy (EPEP) in the treatment of various cell proliferation disorders, and the PEPST and EPEP agents and probes used therein.

Abstract: A semiconductor assembly for use with forced liquid and gas cooling. A relatively rigid nano-structure (for example, array of elongated nanowires) extends from an interior surface of a cap toward a top surface of a semiconductor chip, but, because of the rigidness and structural integrity of the nano-structure built into the cap, and of the cap itself, the nano-structure is reliably spaced apart from the top surface of the chip, which helps allow for appropriate cooling fluid flows. The cap piece and nano-structures built into the cap may be made of silicon or silicon compounds.

Abstract: A semiconductor assembly for use with forced liquid and gas cooling. A relatively rigid nano-structure (for example, array of elongated nanowires) extends from an interior surface of a cap toward a top surface of a semiconductor chip, but, because of the rigidness and structural integrity of the nano-structure built into the cap, and of the cap itself, the nano-structure is reliably spaced apart from the top surface of the chip, which helps allow for appropriate cooling fluid flows. The cap piece and nano-structures built into the cap may be made of silicon or silicon compounds.

Abstract: A method and a system for producing a change in a medium disposed in an artificial container. The method places in a vicinity of the medium at least one of a plasmonics agent and an energy modulation agent. The method applies an initiation energy through the artificial container to the medium. The initiation energy interacts with the plasmonics agent or the energy modulation agent to directly or indirectly produce the change in the medium. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the plasmonics agent or the energy modulation agent.

Abstract: A manganese oxide layer is deposited as a hard mask layer on substrate including at least a dielectric material layer. An optional silicon oxide layer may be formed over the manganese oxide layer. A patterned photoresist layer can be employed to etch the optional silicon oxide layer and the manganese oxide layer. An anisotropic etch process is employed to etch the dielectric material layer within the substrate. The dielectric material layer can include silicon oxide and/or silicon nitride, and the manganese oxide layer can be employed as an effective etch mask that minimizes hard mask erosion and widening of the etched trench. The manganese oxide layer may be employed as an etch mask for a substrate bonding process.

Abstract: A semiconductor assembly for use with forced liquid and gas cooling. A relatively rigid nano-structure (for example, array of elongated nanowires) extends from an interior surface of a cap toward a top surface of a semiconductor chip, but, because of the rigidness and structural integrity of the nano-structure built into the cap, and of the cap itself, the nano-structure is reliably spaced apart from the top surface of the chip, which helps allow for appropriate cooling fluid flows. The cap piece and nano-structures built into the cap may be made of silicon or silicon compounds.

Abstract: A method and a system for producing a change in a medium disposed in an artificial container. The method places in a vicinity of the medium at least one of a plasmonics agent and an energy modulation agent. The method applies an initiation energy through the artificial container to the medium. The initiation energy interacts with the plasmonics agent or the energy modulation agent to directly or indirectly produce the change in the medium. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the plasmonics agent or the energy modulation agent.

Abstract: The use of plasmonics enhanced photospectral therapy (PEPST) and exiton-plasmon enhanced phototherapy (EPEP) in the treatment of various cell proliferation disorders, and the PEPST and EPEP agents and probes used therein.

Abstract: A manganese oxide layer is deposited as a hard mask layer on substrate including at least a dielectric material layer. An optional silicon oxide layer may be formed over the manganese oxide layer. A patterned photoresist layer can be employed to etch the optional silicon oxide layer and the manganese oxide layer. An anisotropic etch process is employed to etch the dielectric material layer within the substrate. The dielectric material layer can include silicon oxide and/or silicon nitride, and the manganese oxide layer can be employed as an effective etch mask that minimizes hard mask erosion and widening of the etched trench. The manganese oxide layer may be employed as an etch mask for a substrate bonding process.

Abstract: A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at the interface between the two substrates to contact portions of metal pads not in contact with a surface of another metal pad, thereby functioning as an oxygen barrier layer, and optionally as an adhesion material layer. A dopant metal rich portion may be formed in peripheral portions of the metal pads in contact with the dopant-metal silicate layer. A dopant-metal oxide portion may be formed in peripheral portions of the metal pads that are not in contact with a dopant-metal silicate layer.

Abstract: Products, compositions, systems, and methods for modifying a target structure. The methods may be performed in a non-invasive manner by placing a nanoparticle having a metallic shell on at least a fraction of a surface in a vicinity of a target structure in a subject and applying an initiation energy thus producing an effect on or change to the target structure directly or via a modulation agent. The nanoparticle is configured, upon exposure to a first wavelength ?1, to generate a second wavelength ?2 of radiation having a higher energy than the first wavelength ?1. The methods may further be performed by application of an initiation energy to activate a photoactivatable agent directly or via an energy modulation agent, optionally in the presence of one or more plasmonics active agents, thus producing an effect on or change to the target structure. Kits containing products or compositions formulated or configured and systems for use in practicing these methods.

Abstract: Separating bonded wafers. A bonded wafer pair is mounted between first and second bonding chucks having flat chuck faces, the first bonding chuck face including adjustable zones capable of movement relative to each other, at least a component of the relative movement is along an axis that is perpendicular to the flat first bonding chuck face. The adjustable zones of the first face are moved relative to each other in a coordinated manner such that a widening gap is formed between the bonding faces of the wafer pair.

Abstract: A vertical stack including a dielectric hard mask layer and a titanium nitride layer is formed over an interconnect-level dielectric material layer such as an organosilicate glass layer. The titanium nitride layer may be partially or fully converted into a titanium oxynitride layer, which is subsequently patterned with a first pattern. Alternately, the titanium nitride layer, with or without a titanium oxynitride layer thereupon, may be patterned with a line pattern, and physically exposed surface portions of the titanium nitride layer may be converted into titanium oxynitride. Titanium oxynitride provides etch resistance during transfer of a combined first and second pattern, but can be readily removed by a wet etch without causing surface damages to copper surfaces. A chamfer may be formed in the interconnect-level dielectric material layer by an anisotropic etch that employs any remnant portion of titanium nitride as an etch mask.

Abstract: A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at the interface between the two substrates to contact portions of metal pads not in contact with a surface of another metal pad, thereby functioning as an oxygen barrier layer, and optionally as an adhesion material layer. A dopant metal rich portion may be formed in peripheral portions of the metal pads in contact with the dopant-metal silicate layer. A dopant-metal oxide portion may be formed in peripheral portions of the metal pads that are not in contact with a dopant-metal silicate layer.

Abstract: Improving wafer-to-wafer bonding alignment. Determining planar distortions of the bonding surface of a host wafer. Mounting a donor wafer on a bonding chuck by a plurality of fixation points, the bonding chuck including multiple zones capable of movement relative to each other. Distorting the bonding surface of the donor wafer by moving the zones of the bonding chuck relative to each other to cause distortions of the bonding surface of the donor wafer such that the distortions of the donor wafer bonding surface correspond to the determined planar distortions of the host wafer bonding surface.

Abstract: A vertical stack including a dielectric hard mask layer and a titanium nitride layer is formed over an interconnect-level dielectric material layer such as an organosilicate glass layer. The titanium nitride layer may be partially or fully converted into a titanium oxynitride layer, which is subsequently patterned with a first pattern. Alternately, the titanium nitride layer, with or without a titanium oxynitride layer thereupon, may be patterned with a line pattern, and physically exposed surface portions of the titanium nitride layer may be converted into titanium oxynitride. Titanium oxynitride provides etch resistance during transfer of a combined first and second pattern, but can be readily removed by a wet etch without causing surface damages to copper surfaces. A chamfer may be formed in the interconnect-level dielectric material layer by an anisotropic etch that employs any remnant portion of titanium nitride as an etch mask.

Abstract: Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness.

Abstract: A method of producing reduced corrosion interconnect structures and structures thereby formed. A method of producing microelectronic interconnects having reduced corrosion begins with a damascene structure having a first dielectric and a first interconnect. A metal oxide layer is deposited selectively to metal or nonselective over the damascene structure and then thermally treated. The treatment converts the metal oxide over the first dielectric to a metal silicate while the metal oxide over the first interconnect remains as a self-aligned protective layer. When a subsequent dielectric stack is formed and patterned, the protective layer acts as an etch stop, oxidation barrier and ion bombardment protector. The protective layer is then removed from the patterned opening and a second interconnect formed. In a preferred embodiment the metal oxide is a manganese oxide and the metal silicate is a MnSiCOH, the interconnects are substantially copper and the dielectric contains ultra low-k.