Abstract: The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region is formed within the semiconductor substrate and extends generally perpendicularly relative to the upper surface of the semiconductor substrate. A gate is formed within the semiconductor substrate between the pair of the source/drain regions.

Abstract: A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A method of forming a variable resistance memory cell includes forming a conductive inner electrode material over a substrate. A variable resistance chalcogenide material comprising germanium, antimony, and tellurium is formed over the conductive inner electrode material. A conductive outer electrode material is formed over the chalcogenide material. The germanium, antimony, and tellurium-comprising material is plasma etched using a chemistry comprising Cl2 and CH2F2.

Abstract: The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region is formed within the semiconductor substrate and extends generally perpendicularly relative to the upper surface of the semiconductor substrate. A gate is formed within the semiconductor substrate between the pair of the source/drain regions.

Abstract: The invention includes a method of patterning a material over a semiconductive substrate, comprising: a) forming a layer of first material against a second material and over the substrate, the substrate comprising a surface having a center and an edge; b) first etching the first material in a reaction chamber, the first etching comprising a first center-to-edge uniformity across the surface of the wafer and comprising a first selectivity for the first material relative to the second material; c) second etching the first material in the reaction chamber, the second etching comprising a second selectivity for the first material relative to the second material, the second center-to-edge uniformity being less than the first center-to-edge uniformity, the second selectivity being greater than the first selectivity; and d) cleaning a component of the first material from at least one sidewall of the reaction chamber between the first and second etchings.

Abstract: In one embodiment, the invention includes a method of removing at least a portion of a material from a substrate. The method includes providing a substrate in a reaction chamber, the substrate having a material supported thereover, and first etching the material while the substrate is in the reaction chamber. The method also includes, after the first etching, cleaning a component from at least one sidewall of the reaction chamber while the substrate remains therein; the component comprising a species that is present in the material. The cleaning includes exposing the sidewall and substrate to conditions which substantially selectively remove the component from the sidewall while not removing the material from the substrate, and not etching any other materials supported by the substrate. After the cleaning, the method includes second etching the material while the substrate is in the reaction chamber.

Abstract: A processing method includes patterning a material over a semiconductive substrate having a center and an edge. The method includes forming a layer of first material against a second material and over the semiconductive substrate and first etching the first material in a reaction chamber. First etching provides a first center-to-edge uniformity across the wafer surface and a first selectivity for the first material relative to the second material. The method also includes second etching the first material to provide a second center-to-edge uniformity across the wafer surface and a second selectivity greater than the first selectivity for the first material relative to the second material. The second center-to-edge uniformity is less than the first center-to-edge uniformity. The method also includes cleaning a component of the first material from at least one sidewall of the reaction chamber between the first and second etchings.

Abstract: In one aspect, the invention includes a method of removing at least a portion of a material from a substrate, comprising: a) first etching the material in a reaction chamber; b) second etching the material in the reaction chamber; and c) cleaning a component of the material from at least one sidewall of the reaction chamber between the first etching and the second etching.

Abstract: In one embodiment, the invention includes a method of removing at least a portion of a material from a substrate. The method includes providing a substrate in a reaction chamber, the substrate having a material supported thereover, and first etching the material while the substrate is in the reaction chamber. The method also includes, after the first etching, cleaning a component from at least one sidewall of the reaction chamber while the substrate remains therein; the component comprising a species that is present in the material. The cleaning includes exposing the sidewall and substrate to conditions which substantially selectively remove the component from the sidewall while not removing the material from the substrate, and not etching any other materials supported by the substrate. After the cleaning, the method includes second etching the material while the substrate is in the reaction chamber.

Abstract: In one aspect, the invention includes a method of removing at least a portion of a material from a substrate, comprising: a) first etching the material in a reaction chamber; b) second etching the material in the reaction chamber; and c) cleaning a component of the material from at least one sidewall of the reaction chamber between the first etching and the second etching.

Abstract: In one aspect, the invention includes a method of removing at least a portion of a material from a substrate, comprising: a) first etching the material in a reaction chamber; b) second etching the material in the reaction chamber; and c) cleaning a component of the material from at least one sidewall of the reaction chamber between the first etching and the second etching.

Abstract: The invention includes a method of patterning a material over a semiconductive substrate, comprising: a) forming a layer of first material against a second material and over the substrate, the semiconductive substrate comprising a surface having a center and an edge; b) first etching the first material in a reaction chamber, the first etching comprising a first center-to-edge uniformity across the surface of the wafer and comprising a first selectivity for the first material relative to the second material; c) second etching the first material in the reaction chamber, the second etching comprising a second selectivity for the first material relative to the second material, the second center-to-edge uniformity being less than the first center-to-edge uniformity, the second selectivity being greater than the first selectivity; and d) cleaning a component of the first material from at least one sidewall of the reaction chamber between the first and second etchings.

Abstract: A processing method includes patterning a material over a semiconductive substrate having a center and an edge. The method includes forming a layer of first material against a second material and over the semiconductive substrate and first etching the first material in a reaction chamber. First etching provides a first center-to-edge uniformity across the wafer surface and a first selectivity for the first material relative to the second material. The method also includes second etching the first material to provide a second center-to-edge uniformity across the wafer surface and a second selectivity greater than the first selectivity for the first material relative to the second material. The second center-to-edge uniformity is less than the first center-to-edge uniformity. The method also includes cleaning a component of the first material from at least one sidewall of the reaction chamber between the first and second etchings.

Abstract: In one aspect, the invention includes a method of removing at least a portion of a material from a substrate, comprising: a) first etching the material in a reaction chamber; b) second etching the material in the reaction chamber; and c) cleaning a component of the material from at least one sidewall of the reaction chamber between the first etching and the second etching.

Abstract: In one aspect, the invention includes a method of removing at least a portion of a material from a substrate, comprising: a) first etching the material in a reaction chamber; b) second etching the material in the reaction chamber; and c) cleaning a component of the material from at least one sidewall of the reaction chamber between the first etching and the second etching.