Abstract: A blind fixing core has its upper portion axially formed integral with two ladder cord slots and two ladder strap slots. The two ladder cord slots are positioned in the upper center of the fixing core and their slot pitches are gradually contracted toward the rear ends that are respectively expanded to form a positioning hole. The two ladder strap slots are respectively positioned at the outer sides of the two ladder cord slots and have their lower sides respectively provided with a positioning rod. The two ladder strap slots further have their opening ends respectively extending inward horizontal to form a position-limiting hook. The fixing core of this invention can be assembled thereon with both ladder cords and ladder straps, increasing adaptability of blind fixing cores.

Abstract: A window covering has a plurality of shade elements, each having a first longitudinal edge and a second longitudinal edge. The shade elements are positioned sequentially below a headrail, and each shade element is made of a window covering material that can be rolled about the first longitudinal edge. A first rail extends from the headrail past the first longitudinal edge of each shade element and is connected to lowermost shade element or the bottom rail. A second rail extends from the headrail and is attached to lowermost shade element or the bottom rail and to the second longitudinal edge of each shade element. Rungs extend between the first rail and the second rail such that there is one rung below and corresponding to each shade element. The first longitudinal edge of each shade element rests upon a corresponding rung when the window covering is in a closed position. A control mechanism is connected to the first rail and is capable of moving the first rail relative to the second rail.

Abstract: In a thin film transistor (TFT) structure, formation of a spacer layer is used for isolating the NI junction from an insulating layer comprising a nitride, so as to decrease the amount of current leakage and improve the electric characteristics of TFT. In a back-channel etching (BCE) type TFT device, the spacer layer (comprsing an oxide layer) is substantially formed at the sidewalls of the channel regions to isolate the insulating layer (comprising silicon nitride) from the NI junctions. In an etch-stop TFT device, the spacer layer (comprising an oxide layer) is substantially formed at the sidewalls of the etch-stop layer to isolate the insulating layer (i.e. etch-stop layer) from the NI junctions.