Abstract: A method for improving CMP polishing uniformity and reducing or preventing cracking in a semiconductor wafer process surface by reducing stress concentrations adjacent to dummy features including providing a semiconductor wafer process surface including active features and dummy features formed adjacently to the active features to improve a CMP polishing uniformity said dummy features each shaped to define an enclosed area in said semiconductor wafer process surface plane comprising at least 5 corner portions; and, performing a CMP process on said semiconductor wafer process surface.

Abstract: An in-line hot-wire sensor for monitoring the mixing and the flow rate of slurry is disclosed. The hot-wire sensor may include a number of resistors organized into a Wheatstone bridge, as well as a frequency-domain transform mechanism. The resistors include a hot-wire resistor that is placed in-line with the slurry after substances have been mixed to become the slurry. The Wheatstone bridge thus yields a signal that is transformed to the frequency domain by the frequency-domain transform mechanism, such as by performing a Fast Fourier Transform (FFT) of the signal. The frequency-domain transform is used to monitor the mixing of the substances into the slurry, and the flow rate of the slurry. The signal may be amplified prior to transformation to the frequency domain.

Abstract: A chemical mechanical polishing apparatus that is equipped with a chilled retaining ring and a method for using the apparatus are described. The retaining ring is mounted therein a heat transfer means such as a metal tube and flowing therethrough a heat exchanging fluid for carrying away heat from the wafer mounted in the retaining ring, resulting in a temperature reduction in the slurry solution that contacts the wafer. The present invention apparatus and method therefore reduces the delamination problem for low k dielectric materials during polishing and the wafer scratching problem.

Abstract: A chemical mechanical polishing apparatus that is equipped with a chilled retaining ring and a method for using the apparatus are described. The retaining ring is mounted therein a heat transfer means such as a metal tube and flowing therethrough a heat exchanging fluid for carrying away heat from the wafer mounted in the retaining ring, resulting in a temperature reduction in the slurry solution that contacts the wafer. The present invention apparatus and method therefore reduces the delamination problem for low k dielectric materials during polishing and the wafer scratching problem.

Abstract: A polishing head for holding a wafer during a polishing process without the edge-effect or the edge peeling defect and a method for improving edge profile on a wafer during a polishing process are described. The polishing head is constructed by a carrier head, a retaining ring, and at least three piezoelectric actuator/sensors mounted in-between a recessed peripheral edge portion of the carrier head and a top surface of the retaining ring.

Abstract: A dual detection method for end point in a chemical mechanical polishing process is described. The dual detection method utilizes both an optical detection device and an acoustical detection device. The acoustical detection device may also be used independently in certain applications without the optical detection device. The acoustical detection device determines an end point and stops the CMP process when a volume of the acoustical emission changes by at least 30% from its initial volume, or preferably changes by at least 50% from its initial volume.

Abstract: A polishing head for holding a wafer during a polishing process without the edge-effect or the edge peeling defect and a method for improving edge profile on a wafer during a polishing process are described. The polishing head is constructed by a carrier head, a retaining ring, and at least three piezoelectric actuator/sensors mounted in-between a recessed peripheral edge portion of the carrier head and a top surface of the retaining ring.

Abstract: A dual detection method for end point in a chemical mechanical polishing process is described. The dual detection method utilizes both an optical detection device and an acoustical detection device. The acoustical detection device may also be used independently in certain applications without the optical detection device. The acoustical detection device determines an end point and stops the CMP process when a volume of the acoustical emission changes by at least 30% from its initial volume, or preferably changes by at least 50% from its initial volume.

Abstract: An apparatus and method for controlling a flow of process material to a deposition chamber. The apparatus comprises an injector valve, disposed between the process material source and the deposition chamber. The injector valve controls the flow of precursor material by repeatedly opening and closing the injector valve with a predetermined duty cycle. The apparatus further comprises an evaporator coupled to the injector valve for evaporating the precursor.