Abstract: A bonding structure is provided, including a first substrate; a second substrate disposed opposite the first substrate; a first bonding layer disposed on the first substrate; a second bonding layer disposed on the second substrate and opposite the first bonding layer; and a silver feature disposed between the first bonding layer and the second bonding layer. The silver feature includes a silver nano-twinned structure including parallel twin boundaries. The silver nano-twinned structure includes 90% or more [111] crystal orientation. A method for forming a bonding structure is also provided. Each of steps of forming a first silver feature and second silver feature includes sputtering or evaporation coating. Negative bias ion bombardment is applied to the first silver feature and second silver feature during sputtering or evaporation.

Abstract: A bonding structure is provided, wherein the bonding structure includes a first substrate, a second substrate, a first adhesive layer, a second adhesive layer, and a silver feature. The second substrate is disposed opposite to the first substrate. The first adhesive layer is disposed on the first substrate. The second adhesive layer is disposed on the second substrate and opposite the first adhesive layer. The silver feature is disposed between the first adhesive layer and the second adhesive layer. The silver feature includes a silver nano-twinned structure that includes twin boundaries that are arranged in parallel. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation.

Abstract: A nano-twinned structure on a metallic thin film surface is provided. The nano-twinned structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a metallic thin film including Ag, Cu, Au, Pd or Ni over the adhesive-lattice-buffer layer. The bottom region of the metallic thin film has equi-axial coarse grains. The surface region of the metallic thin film contains parallel-arranged high-density twin boundaries (?3+?9) with a pitch from 1 nm to 100 nm. The quantity of the parallel-arranged twin boundaries is 50% to 80% of the total quantity of twin boundaries in the cross-sectional view of the metallic thin film. The parallel-arranged twin boundaries include 30% to 90% [111] crystal orientation. The nano-twinned structure on the metallic thin film surface is formed through a post-deposition ion bombardment on the evaporated metallic thin film surface after the evaporation process.

Abstract: A metallic nano-twinned thin film structure and a method for forming the same are provided. The metallic nano-twinned thin film structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a single-layer or multi-layer metallic nano-twinned thin film over the adhesive-lattice-buffer layer. The metallic nano-twinned thin film includes parallel-arranged twin boundaries (?3+?9). In a cross-sectional view of the metallic nano-twinned thin film, the parallel-arranged twin boundaries account for 30% to 90% of total twin boundaries. The parallel-arranged twin boundaries include 80% to 99% of crystal orientation [111]. The single-layer metallic nano-twinned thin film includes copper, gold, palladium or nickel. The multi-layer metallic nano-twinned thin films are respectively composed of silver, copper, gold, palladium or nickel.

Abstract: A bonding structure is provided, including a first substrate; a second substrate disposed opposite the first substrate; a first bonding layer disposed on the first substrate; a second bonding layer disposed on the second substrate and opposite the first bonding layer; and a silver feature disposed between the first bonding layer and the second bonding layer. The silver feature includes a silver nano-twinned structure including parallel twin boundaries. The silver nano-twinned structure includes 90% or more [111] crystal orientation. A method for forming a bonding structure is also provided. Each of steps of forming a first silver feature and second silver feature includes sputtering or evaporation coating. Negative bias ion bombardment is applied to the first silver feature and second silver feature during sputtering or evaporation.

Abstract: A method for forming a bonding structure is provided, including providing a first metal, wherein the first metal has a first absolute melting point. The method includes forming a silver nano-twinned layer on the first metal. The silver nano-twinned layer includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation. The method includes oppositely bonding the silver nano-twinned layer to a second metal. The second metal has a second absolute melting point. The bonding of the silver nano-twinned layer and the second metal is performed at a temperature of 300° C. to half of the first absolute melting point or 300° C. to half of the second absolute melting point.

Abstract: A bonding structure is provided, wherein the bonding structure includes a first substrate, a second substrate, a first adhesive layer, a second adhesive layer, and a silver feature. The second substrate is disposed opposite to the first substrate. The first adhesive layer is disposed on the first substrate. The second adhesive layer is disposed on the second substrate and opposite the first adhesive layer. The silver feature is disposed between the first adhesive layer and the second adhesive layer. The silver feature includes a silver nano-twinned structure that includes twin boundaries that are arranged in parallel. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation.

Abstract: A die bonding structure is provided. The die bonding structure includes a chip, an adhesive layer under the chip, a bonding layer under the adhesive layer, and a heat dissipation substrate under the bonding layer. The bonding layer includes a silver nano-twinned thin film, which has parallel-arranged twin boundaries. The parallel-arranged twin boundaries include at least 90% of [111] crystal orientation.

Abstract: A copper-based alloy wire made of a material selected from the group consisting of a copper-gold alloy, a copper-palladium alloy and a copper-gold-palladium alloy is provided. The alloy wire has a polycrystalline structure of a face-centered cubic lattice and consists of a plurality of equi-axial grains. The quantity of grains having annealing twins is 10 percent or more of the total quantity of the grains of the copper-based alloy wire.

Abstract: A stud bump structure and method for manufacturing the same are provided. The stud bump structure includes a substrate, and a first silver alloy stud bump disposed on the substrate, wherein the first silver alloy stud bump has a weight percentage ratio of Ag:Au:Pd=60-99.98:0.01-30:0.01-10.

Abstract: A stud bump structure, a package structure thereof and method of manufacturing the package structure are provided. The stud bump structure include a first chip; and a silver alloy stud bump disposed on the substrate, wherein the on-chip silver alloy stud bump includes Pd of 0.01˜10 wt %, while the balance is Ag. The package structure further includes a substrate having an on-substrate bond pad electrically connected to the on-chip silver alloy stud bump by flip chip bonding.

Abstract: A stud bump structure, a package structure thereof and method of manufacturing the package structure are provided. The stud bump structure include a first chip; and a silver alloy stud bump disposed on the substrate, wherein the on-chip silver alloy stud bump includes Pd of 0.01˜10 wt %, while the balance is Ag. The package structure further includes a substrate having an on-substrate bond pad electrically connected to the on-chip silver alloy stud bump by flip chip bonding.

Abstract: A multi-layer thermoelectric module and a fabricating method thereof are provided. The module includes two thermoelectric element sets and a metal electrode set, in which the thermoelectric element sets are corresponding to different operating temperature ranges. Each thermoelectric element set includes a thermoelectric unit, an interfacial adhesion layer, a diffusion barrier layer and a high melting-point metal layer. In the method, the thermoelectric unit, the interfacial adhesion layer, and the diffusion barrier layer are sequentially formed on the thermoelectric unit. Then, two high melting-point metal layers are formed respectively on the electrode layers of the metal electrode set.

Abstract: An alloy wire made of a material selected from one of a group consisting of a silver-gold alloy, a silver-palladium alloy and a silver-gold-palladium alloy is provided. The alloy wire is with a polycrystalline structure of a face-centered cubic lattice and includes a plurality of grains. A central part of the alloy wire includes slender grains or equi-axial grains, and the other parts of the alloy wire consist of equi-axial grains. A quantity of the grains having annealing twins was 20 percent or more of the total quantity of the grains of the alloy wire.

Abstract: A multi-layer thermoelectric module and a fabricating method thereof are provided. The module includes two thermoelectric element sets and a metal electrode set, in which the thermoelectric element sets are corresponding to different operating temperature ranges. Each thermoelectric element set includes a thermoelectric unit, an interfacial adhesion layer, a diffusion barrier layer and a high melting-point metal layer. In the method, the thermoelectric unit, the interfacial adhesion layer, and the diffusion barrier layer are sequentially formed on the thermoelectric unit. Then, two high melting-point metal layers are formed respectively on the electrode layers of the metal electrode set.

Abstract: A copper-based alloy wire made of a material selected from the group consisting of a copper-gold alloy, a copper-palladium alloy and a copper-gold-palladium alloy is provided. The alloy wire has a polycrystalline structure of a face-centered cubic lattice and consists of a plurality of equi-axial grains. The quantity of grains having annealing twins is 10 percent or more of the total quantity of the grains of the copper-based alloy wire.

Abstract: A die bonding method and a die bonding structure of a light emitting diode package are provided. The die bonding structure includes a light transmissive adhesive layer formed on a surface of a base plate of a light emitting diode chip, a first metal layer formed on the adhesive layer, a second metal layer formed on a packaging base plate and multiple metallic compound layers. The metallic compound layers are formed by spreading a third metal layer disposed on at least one of the first metal layer and the second metal layer into the first metal layer and the second metal layer after the third metal layer is heated up. The melting points of the first metal layer and the second metal layer are higher than the melting point of the third metal layer.

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.

Abstract: A stud bump structure and method for manufacturing the same are provided. The stud bump structure includes a substrate, and a first silver alloy stud bump disposed on the substrate, wherein the first silver alloy stud bump has a weight percentage ratio of Ag:Au:Pd=60-99.98:0.01-30:0.01-10.

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.