Abstract: One embodiment of the invention is directed to a genetically enhanced cyanobacterium for the production of a first chemical compound, comprising at least one first recombinant gene encoding a first biocatalyst for the production of the first chemical compound, wherein the gene is under the transcriptional control of a Co2+ or Zn2+-inducible promoter. Such a cyanobacterium can provide a tighter control of the production of the first chemical compound.

Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.

Abstract: A cyanobacterial host cell, Cyanobacterium sp., that harbors at least one recombinant gene for the production of a chemical compounds is provided, as well as vectors derived from an endogenous plasmid isolated from the cell.

Abstract: A GeSi avalanche photodiode (APD includes an anti-reflection structure, a Ge absorption region, and a resonance cavity enhanced (RCE) reflector. The anti-reflection structure includes one or more dielectric layers and a top contact layer which is heavily doped with dopants of a first polarity. The RCE reflector includes: an intrinsic or lightly doped Si multiplication layer, a Si contact layer which is heavily doped with dopants of a second polarity opposite the first polarity, a Si cavity length compensation layer, a buried oxide (BOX) layer, and a Si substrate.

Abstract: A genetically enhanced cyanobacterial host cell, Cyanobacterium sp. ABICyano1, is disclosed. The enhanced Cyanobacterium sp. ABICyano1 produces a compound or compounds of interest.

Abstract: A cyanobacterial host cell, Cyanobacterium sp., that harbors at least one recombinant gene for the production of a chemical compounds is provided, as well as vectors derived from an endogenous plasmid isolated from the cell.