Abstract: A dosing lance assembly for an exhaust component includes: a housing including: a plate having a first aperture, a pipe having a first pipe end coupled to the plate around the first aperture, a second pipe end, and a second aperture, an endcap coupled to the second pipe end, and an elbow coupled to the pipe around the second aperture; an air conduit having a first air conduit end and a second air conduit end coupled to the elbow, the air conduit separated from the pipe at a location between the plate and the endcap; and a delivery conduit extending within the air conduit and coupled to the elbow.

Abstract: A dosing lance assembly for an exhaust component includes: a housing including: a plate having a first aperture, a pipe having a first pipe end coupled to the plate around the first aperture, a second pipe end, and a second aperture, an endcap coupled to the second pipe end, and an elbow coupled to the pipe around the second aperture; an air conduit having a first air conduit end and a second air conduit end coupled to the elbow, the air conduit separated from the pipe at a location between the plate and the endcap; and a delivery conduit extending within the air conduit and coupled to the elbow.

Abstract: A dosing lance assembly for an exhaust component includes: a housing comprising: a plate having a first channel, an endcap having a second channel, and a pipe having a first end coupled to the plate and a second end coupled to the endcap, wherein at least a portion of the pipe is airfoil-shaped; and a delivery conduit having a first end coupled to the plate and a second end coupled to the endcap, such that reductant is flowable from the first channel to the second channel.

Abstract: A reductant insertion assembly for inserting a reductant into an aftertreatment system includes: a pump assembly comprising a pump that includes a pump outlet; a first metering assembly fluidly coupled to the pump outlet, the first metering assembly comprising a first metering manifold; and a second metering assembly fluidly coupled in series with the pump, the second metering assembly being a separate structure from the first metering assembly and comprising a second metering manifold removably coupled to the first metering manifold. The pump is configured to pump the reductant to the first metering assembly, and to the second metering assembly via the first metering assembly.

Abstract: A method for defining a route for a connecting medium through a three-dimensional building, involving modeling the three-dimensional building as a two-dimensional array of panels, wherein any two panels in the array of panels are connected panels if a connecting medium can be directly routed from one panel to the other panel, a set of coordinates for each of one or more panels in the array of panels where a connecting medium can enter or exit the panel, and a union of the respective set of coordinates for each of the one or more connected panels in the array of panels where a connecting medium can be routed between the connected panels. The process selects one or more panels in the array through which to route the connecting medium based on the unions of the respective set of coordinates for each of the one or more connected panels in the array of panels.

Abstract: A dosing lance assembly for an exhaust component includes: a housing comprising: a plate having a first channel, an endcap having a second channel, and a pipe having a first end coupled to the plate and a second end coupled to the endcap, wherein at least a portion of the pipe is airfoil-shaped; and a delivery conduit having a first end coupled to the plate and a second end coupled to the endcap, such that reductant is flowable from the first channel to the second channel.

Abstract: A dosing lance assembly for an exhaust component includes a housing and a delivery conduit. The housing includes a plate, an endcap, and a pipe. The plate has a first channel. The endcap has a second channel. The pipe has a first end coupled to the plate and a second end coupled to the endcap. The delivery conduit has a first end coupled to the plate and a second end coupled to the endcap, such that reductant is flowable from the first channel to the second channel. When the housing is at an ambient temperature, (i) a length of the delivery conduit is greater than (ii) a first distance between a location at which the first end of the pipe is coupled to the plate and a location at which the second end of the pipe is coupled to the endcap.

Abstract: A reductant insertion assembly for inserting a reductant into an aftertreatment system includes: a pump assembly comprising a pump that includes a pump outlet; a first metering assembly fluidly coupled to the pump outlet, the first metering assembly comprising a first metering manifold; and a second metering assembly fluidly coupled in series with the pump, the second metering assembly being a separate structure from the first metering assembly and comprising a second metering manifold removably coupled to the first metering manifold. The pump is configured to pump the reductant to the first metering assembly, and to the second metering assembly via the first metering assembly.

Abstract: A reductant insertion assembly for inserting a reductant into an aftertreatment system comprises a pump assembly including a pump. A first metering assembly is fluidly coupled to the pump. A second metering assembly is fluidly coupled to first metering assembly in series with the pump. The pump is configured to pump the reductant to the first metering assembly, and to the second metering assembly via the first metering assembly, such that a first reductant pressure in the first metering assembly is equal to a second reductant pressure in the second metering assembly.

Abstract: A dosing module includes: a frame assembly comprising a plurality of panels; a first manifold configured to separately receive reductant and air and including: a first connector, and a second connector; and a dosing tray including: a base panel, a second manifold configured to separately receive the air and the reductant and provide the air and the reductant back to the first manifold, a third connector selectively coupled to the first connector, and a fourth connector selectively coupled to the second connector. When the third connector is coupled to the first connector and the fourth connector is coupled to the second connector, the reductant or air is routed to the first connector, from the first connector to the third connector, from the third connector to the fourth connector, from the fourth connector to the second connector, and from the second connector outside of the dosing module.

Abstract: A dosing lance assembly for an exhaust component includes a housing and a delivery conduit. The housing includes a plate, an endcap, and a pipe. The plate has a first channel. The endcap has a second channel. The pipe has a first end coupled to the plate and a second end coupled to the endcap. The delivery conduit has a first end coupled to the plate and a second end coupled to the endcap, such that reductant is flowable from the first channel to the second channel. When the housing is at an ambient temperature, (i) a length of the delivery conduit is greater than (ii) a first distance between a location at which the first end of the pipe is coupled to the plate and a location at which the second end of the pipe is coupled to the endcap.

Abstract: A method for performing a cleaning process in a processing chamber includes, without a substrate arranged on a substrate support of the processing chamber, supplying reactant gases in a side gas flow via side tuning holes of a gas distribution device to effect deposition of a coating on an edge ring of the substrate support. The side gas flow targets an outer region of the processing chamber above the edge ring, and the reactant gases are supplied at a first flow rate. The method further includes, while supplying the reactant gases via the side tuning holes, supplying inert gases in a center gas flow via center holes of the gas distribution device. The inert gases are supplied at a second flow rate that is greater than the first flow rate.

Abstract: A dosing module includes: a frame assembly comprising a plurality of panels; a first manifold configured to separately receive reductant and air and including: a first connector, and a second connector; and a dosing tray including: a base panel, a second manifold configured to separately receive the air and the reductant and provide the air and the reductant back to the first manifold, a third connector selectively coupled to the first connector, and a fourth connector selectively coupled to the second connector. When the third connector is coupled to the first connector and the fourth connector is coupled to the second connector, the reductant or air is routed to the first connector, from the first connector to the third connector, from the third connector to the fourth connector, from the fourth connector to the second connector, and from the second connector outside of the dosing module.

Abstract: A reductant insertion assembly for inserting a reductant into an aftertreatment system comprises a pump assembly including a pump. A first metering assembly is fluidly coupled to the pump. A second metering assembly is fluidly coupled to first metering assembly in series with the pump. The pump is configured to pump the reductant to the first metering assembly, and to the second metering assembly via the first metering assembly, such that a first reductant pressure in the first metering assembly is equal to a second reductant pressure in the second metering assembly.

Abstract: An aftertreatment system structured to decompose constituents of an exhaust produced by an engine having a turbocharger including a turbine and a compressor coupled thereto, includes: a selective catalytic reduction system; an injector fluidly coupled to the selective catalytic reduction system and structured to selectively insert a reductant into the selective catalytic reduction system; an intake conduit fluidly coupled to a compressor outlet of the compressor and structured to deliver a compressed air from the compressor to the engine; and an air delivery line fluidly coupling the intake conduit to the injector, the air delivery line structured to deliver a portion of the compressed air to the injector.

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III-V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

Abstract: Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.

Abstract: Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III_V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

Abstract: Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.