Patents by Inventor Tyler Kent

Tyler Kent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180233674
    Abstract: Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.
    Type: Application
    Filed: January 29, 2018
    Publication date: August 16, 2018
    Inventors: Thuc-Quyen NGUYEN, Arnold Bernarte TAMAYO, Bright WALKER, Tyler KENT, Chunki KIM, Mananya TANTIWIWAT
  • Publication number: 20160301017
    Abstract: Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.
    Type: Application
    Filed: April 8, 2016
    Publication date: October 13, 2016
    Inventors: Thuc-Quyen NGUYEN, Arnold Bernarte TAMAYO, Bright WALKER, Tyler KENT, Chunki KIM, Mananya TANTIWIWAT
  • Publication number: 20160056033
    Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III_V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.
    Type: Application
    Filed: August 19, 2015
    Publication date: February 25, 2016
    Inventors: Kasra Sardashti, Tobin Kaufman-Osborn, Tyler Kent, Andrew Kummel, Shariq Siddiqui, Bhagawan Sahu, Adam Brand, Naomi Yoshida
  • Publication number: 20100326525
    Abstract: Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.
    Type: Application
    Filed: March 26, 2010
    Publication date: December 30, 2010
    Inventors: Thuc-Quyen NGUYEN, Arnold Bernarte Tamayo, Bright Walker, Tyler Kent, Chunki Kim, Mananya Tantiwiwat