Patents by Inventor Tyler Lowrey

Tyler Lowrey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200308694
    Abstract: A system and method for controllably varying the thickness of film deposition on a spherical or other non-flat substrate during high volume manufacturing is described. A gripping X-Y transfer stage rotates a substrate in-situ in a direction film deposition chamber. The transfer stage is driven at variable speeds to realize a desired distribution of film thickness variation around the surface of the substrate. Spatial variations in disposition thickness can be smoothly and continuously variable or abruptly changed.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 1, 2020
    Applicant: INNOVEN ENERGY LLC
    Inventor: Tyler A. Lowrey
  • Patent number: 10522756
    Abstract: In various examples, a dual resistance heater for a phase change material region is fabricated by forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, the portion of the resistive material proximate to the phase change material region forms a heater because of its high resistance value, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: December 31, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Yudong Kim, Ilya V Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
  • Patent number: 10522757
    Abstract: In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, in certain embodiments, the portion of the resistive material proximate to the phase change material region may be used as a heater because of a relatively, high resistance value of the resistive material, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: December 31, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Yudong Kim, Ilya V Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
  • Publication number: 20180138406
    Abstract: In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, in certain embodiments, the portion of the resistive material proximate to the phase change material region may be used as a heater because of a relatively, high resistance value of the resistive material, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.
    Type: Application
    Filed: December 21, 2017
    Publication date: May 17, 2018
    Inventors: Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
  • Patent number: 9570163
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: February 14, 2017
    Assignee: Ovonyx Memory Technology, LLC
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Patent number: 9251895
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: October 13, 2014
    Date of Patent: February 2, 2016
    Assignee: Carlow Innovations LLC
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Publication number: 20150206581
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: March 30, 2015
    Publication date: July 23, 2015
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Publication number: 20150188050
    Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.
    Type: Application
    Filed: February 6, 2015
    Publication date: July 2, 2015
    Inventors: Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
  • Patent number: 9036409
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: May 19, 2015
    Assignee: Ovonyx, Inc.
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Publication number: 20150109857
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: October 13, 2014
    Publication date: April 23, 2015
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Patent number: 9000408
    Abstract: An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: April 7, 2015
    Assignee: Ovonyx, Inc.
    Inventors: Sergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj
  • Patent number: 8952299
    Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: February 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Yudong Kim, Ilya V Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler A. Lowrey
  • Patent number: 8908413
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 9, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Publication number: 20140328121
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: July 21, 2014
    Publication date: November 6, 2014
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Patent number: 8861293
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: October 14, 2014
    Assignee: Ovonyx, Inc.
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Patent number: 8705306
    Abstract: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
    Type: Grant
    Filed: July 23, 2012
    Date of Patent: April 22, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Ward D. Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
  • Publication number: 20140098604
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: December 11, 2013
    Publication date: April 10, 2014
    Applicant: Ovonyx, Inc.
    Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Patent number: 8658510
    Abstract: A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: February 25, 2014
    Assignee: Intel Corporation
    Inventors: Stephen J. Hudgens, Tyler Lowrey
  • Publication number: 20140038379
    Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.
    Type: Application
    Filed: August 19, 2013
    Publication date: February 6, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler A. Lowrey
  • Patent number: 8634226
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: January 21, 2014
    Assignee: Ovonyx, Inc.
    Inventors: George Gordon, Semyon D. Savransky, Ward Parkinson, Sergey A. Kostylev, James Reed, Tyler Lowrey, Ilya V. Karpov, Gianpaolo Spadini