Patents by Inventor Tz-Chiang Yu

Tz-Chiang Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9425361
    Abstract: A light-emitting device comprises a light-emitting stack comprising a first surface and a second surface opposite to the first surface; a first electrode formed on the second surface of the light-emitting stack; a current blocking layer formed on the first surface of the light-emitting stack and corresponding to a location of the first electrode; and a second electrode covering the current blocking layer and comprising a plurality of first metal layers and a plurality of second metal layers alternating with the plurality of first metal layers, wherein the plurality of first metal layers is discontinuous.
    Type: Grant
    Filed: January 25, 2016
    Date of Patent: August 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chi Hao Huang, Siou Huang Liou, Tz Chiang Yu, Jennhua Fu
  • Publication number: 20160141458
    Abstract: A light-emitting device comprises a light-emitting stack comprising a first surface and a second surface opposite to the first surface; a first electrode formed on the second surface of the light-emitting stack; a current blocking layer formed on the first surface of the light-emitting stack and corresponding to a location of the first electrode; and a second electrode covering the current blocking layer and comprising a plurality of first metal layers and a plurality of second metal layers alternating with the plurality of first metal layers, wherein the plurality of first metal layers is discontinuous.
    Type: Application
    Filed: January 25, 2016
    Publication date: May 19, 2016
    Inventors: Chi Hao HUANG, Siou Huang LIOU, Tz Chiang YU, Jennhua FU
  • Patent number: 9263643
    Abstract: A light-emitting device includes: a light-emitting stack including a first surface and a second surface opposite to the first surface, wherein the light-emitting stack emits a light having a wavelength between 365 nm and 550 nm; and a first electrode formed on the first surface and comprising a first metal layer and a second metal layer alternating with the first metal layer, wherein the first electrode has a reflectivity larger than 95% for reflecting the light, and the second metal layer has a higher reflectivity index relative to the light than that of the first metal layer.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: February 16, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chi Hao Huang, Siou Huang Liou, Tz Chiang Yu, Jennhua Fu
  • Publication number: 20150287886
    Abstract: A light-emitting device includes: a light-emitting stack including a first surface and a second surface opposite to the first surface, wherein the light-emitting stack emits a light having a wavelength between 365 nm and 550 nm; and a first electrode formed on the first surface and comprising a first metal layer and a second metal layer alternating with the first metal layer, wherein the first electrode has a reflectivity larger than 95% for reflecting the light, and the second metal layer has a higher reflectivity index relative to the light than that of the first metal.
    Type: Application
    Filed: April 8, 2015
    Publication date: October 8, 2015
    Inventors: Chi Hao HUANG, Siou Huang LIOU, Tz Chiang YU, Jennhua FU
  • Publication number: 20140206115
    Abstract: The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.
    Type: Application
    Filed: March 19, 2014
    Publication date: July 24, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Tz Chiang YU, Jenn Hwa FU, Hsin Hsiung HUANG
  • Patent number: 8785219
    Abstract: The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: July 22, 2014
    Assignee: Epistar Corporation
    Inventors: Tz Chiang Yu, Jenn Hwa Fu, Hsin Hsiung Huang
  • Patent number: 8716743
    Abstract: The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer.
    Type: Grant
    Filed: January 23, 2013
    Date of Patent: May 6, 2014
    Assignee: Epistar Corporation
    Inventors: Tz-Chiang Yu, Jenn-Hwa Fu, Hsin-Hsiung Huang