Patents by Inventor Tze-Liang Lee

Tze-Liang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220384649
    Abstract: A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Chung-Ting Ko, Han-Chi Lin, Chunyao Wang, Ching Yu Huang, Tze-Liang Lee, Yung-Chih Wang
  • Publication number: 20220367293
    Abstract: In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.
    Type: Application
    Filed: October 4, 2021
    Publication date: November 17, 2022
    Inventors: Jung-Hau Shiu, Ching-Yu Chang, Jei Ming Chen, Jr-Yu Chen, Tze-Liang Lee
  • Publication number: 20220367179
    Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Ching-Yu Chang, Jei Ming Chen, Tze-Liang Lee
  • Patent number: 11502196
    Abstract: A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: November 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Ting Ko, Han-Chi Lin, Chunyao Wang, Ching Yu Huang, Tze-Liang Lee, Yung-Chih Wang
  • Publication number: 20220359299
    Abstract: A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. The isolation regions extend into a semiconductor substrate. A portion of the semiconductor fin is etched to form a trench, which extends lower than bottom surfaces of the isolation regions, and extends into the semiconductor substrate. The method further includes filling the trench with a first dielectric material to form a first fin isolation region, recessing the first fin isolation region to form a first recess, and filling the first recess with a second dielectric material. The first dielectric material and the second dielectric material in combination form a second fin isolation region.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 10, 2022
    Inventors: Chung-Ting Ko, Tai-Chun Huang, Jr-Hung Li, Tze-Liang Lee, Chi On Chui
  • Publication number: 20220359515
    Abstract: A semiconductor device includes a plurality of semiconductor fins, at least one gate stack, a refill isolation, and an air gap. Each of the semiconductor fins extends in an X direction. Two adjacent ones of the semiconductor fins are spaced apart from each other in a Y direction transverse to the X direction. The at least one gate stack has two stack sections spaced apart from each other in the Y direction. The stack sections are disposed over two adjacent ones of the semiconductor fins, respectively. The refill isolation and the air gap are disposed between the stack sections.
    Type: Application
    Filed: May 6, 2021
    Publication date: November 10, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pei-Yu CHOU, Yi-Ting FU, Ting-Gang CHEN, Tze-Liang LEE
  • Publication number: 20220352018
    Abstract: A layer of carbon (e.g., graphite or graphene) at a metal interface (e.g., between an MEOL interconnect and a gate contact or a source or drain region contact, between an MEOL contact plug and a BEOL metallization layer, and/or between BEOL conductive structures) is used to reduce contact resistance at the metal interface, which increases electrical performance of an electronic device. Additionally, in some implementations, the layer of carbon may help prevent heat transfer from a second metal to a first metal when the second metal is deposited over the first metal. This results in more symmetric deposition of the second metal, which reduces surface roughness and contact resistance at the metal interface. As an alternative, in some implementations, the layer of carbon is etched before deposition of the second metal in order to reduce contact resistance at the metal interface.
    Type: Application
    Filed: August 27, 2021
    Publication date: November 3, 2022
    Inventors: Po-Hsien CHENG, Chi-Ming YANG, Tze-Liang LEE
  • Patent number: 11482411
    Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: October 25, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ching-Yu Chang, Jei Ming Chen, Tze-Liang Lee
  • Publication number: 20220336202
    Abstract: A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Inventors: Wei-Che Hsieh, Ching Yu Huang, Hsin-Hao Yeh, Chunyao Wang, Tze-Liang Lee
  • Publication number: 20220336583
    Abstract: A method includes forming a transistor over a front side of a substrate; forming a front-side interconnect structure over the transistor, the front-side interconnect structure comprising layers of conductive lines, and conductive vias interconnecting the layers of conductive lines; forming a first bonding layer over the front-side interconnect structure; forming a second bonding layer over a carrier substrate; bonding the front-side interconnect structure to the carrier substrate by pressing the first bonding layer against the second bonding layer; and forming a backside interconnect structure over a backside of the substrate after bonding the front-side interconnect structure to the carrier substrate.
    Type: Application
    Filed: September 20, 2021
    Publication date: October 20, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Guan-Yao TU, Su-Jen SUNG, Tze-Liang LEE, Hong-Wei CHAN
  • Publication number: 20220319862
    Abstract: A method includes forming a dielectric layer over a substrate; forming a patterned amorphous silicon layer over a dielectric layer; depositing a first spacer layer over the patterned amorphous silicon layer; depositing a second spacer layer over the first spacer layer; forming a photoresist having an opening over the substrate; depositing a hard mask layer in the opening of the photoresist; after depositing the hard mask layer in the opening of the photoresist, removing the photoresist; and performing an etching process to etch the dielectric layer by using the patterned amorphous silicon layer, the first spacer layer, the second spacer layer, and the hard mask layer as an etch mask, in which the etching process etches the second spacer layer at a slower etch rate than etching the first spacer layer.
    Type: Application
    Filed: August 2, 2021
    Publication date: October 6, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Yu CHANG, Jei-Ming CHEN, Tze-Liang LEE
  • Publication number: 20220310815
    Abstract: A method includes depositing a dielectric layer, depositing a plurality of mandrel strips over the dielectric layer, and forming a plurality of spacers on sidewalls of the plurality of mandrel strips to form a plurality of mask groups. Each of the plurality of mandrel strips and two of the plurality of spacers form a mask group in the plurality of mask groups. The method further includes forming a mask strip connecting two neighboring mask groups in the plurality of mask groups, using the plurality of mask groups and the mask strip collectively as an etching mask to etch the dielectric layer and to form trenches in the dielectric layer, and filling a conductive material into the trenches to form a plurality of conductive features.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 29, 2022
    Inventor: Tze-Liang Lee
  • Patent number: 11441221
    Abstract: In an embodiment, a method of manufacturing a semiconductor device includes preparing a deposition processing chamber by flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber and flowing a second precursor to form a hydrophobic layer over the dielectric coat. In addition one or more deposition cycles are performed. Next, the second precursor is flowed again to repair the hydrophobic layer.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: September 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Hsien Cheng, Chung-Ting Ko, Tsung-Hsun Yu, Tze-Liang Lee, Chi On Chui
  • Publication number: 20220285210
    Abstract: A semiconductor structure including a substrate, a first dielectric layer, a first conductive feature, an etch stop layer, a second dielectric layer and a second conductive feature is provided. The first dielectric layer is disposed over the substrate. The first conductive feature is disposed in the first dielectric layer. The etch stop layer is disposed over the first dielectric layer and the first conductive feature, wherein the etch stop layer comprises a metal-containing layer and a silicon-containing layer, the metal-containing layer is located between the first dielectric layer and the silicon-containing layer, the metal-containing layer comprises a nitride-containing region and an oxide-containing region, and the nitride-containing region contacts the first conductive feature. The second dielectric layer is disposed over the etch stop layer. The second conductive feature penetrates the second dielectric layer and electrically connects with the first conductive feature.
    Type: Application
    Filed: March 4, 2021
    Publication date: September 8, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kai Lin, Su-Jen Sung, Tze-Liang Lee, Jen-Hung Wang
  • Publication number: 20220285529
    Abstract: A method includes forming a first and a second dummy gate stack crossing over a semiconductor region, forming an ILD to embed the first and the second dummy gate stacks therein, replacing the first and the second dummy gate stacks with a first and a second replacement gate stack, respectively, performing a first etching process to form a first opening. A portion of the first replacement gate stack and a portion of the second replacement gate stack are removed. The method further includes filling the first opening to form a dielectric isolation region, performing a second etching process to form a second opening, with the ILD being etched, and the dielectric isolation region being exposed to the second opening, forming a contact spacer in the second opening, and filling a contact plug in the second opening. The contact plug is between opposite portions of the contact spacer.
    Type: Application
    Filed: May 23, 2022
    Publication date: September 8, 2022
    Inventors: Ting-Gang Chen, Tai-Chun Huang, Ming-Chang Wen, Shu-Yuan Ku, Fu-Kai Yang, Tze-Liang Lee, Yung-Cheng Lu, Yi-Ting Fu
  • Patent number: 11437515
    Abstract: An integrated circuit structure includes a gate stack over a semiconductor substrate, and a silicon germanium region extending into the semiconductor substrate and adjacent to the gate stack. The silicon germanium region has a top surface, with a center portion of the top surface recessed from edge portions of the top surface to form a recess. The edge portions are on opposite sides of the center portion.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kun-Mu Li, Tsz-Mei Kwok, Hsueh-Chang Sung, Chii-Horng Li, Tze-Liang Lee
  • Patent number: 11437277
    Abstract: A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. The isolation regions extend into a semiconductor substrate. A portion of the semiconductor fin is etched to form a trench, which extends lower than bottom surfaces of the isolation regions, and extends into the semiconductor substrate. The method further includes filling the trench with a first dielectric material to form a first fin isolation region, recessing the first fin isolation region to form a first recess, and filling the first recess with a second dielectric material. The first dielectric material and the second dielectric material in combination form a second fin isolation region.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Ting Ko, Tai-Chun Huang, Jr-Hung Li, Tze-Liang Lee, Chi On Chui
  • Publication number: 20220262725
    Abstract: An interconnect structure includes an interconnect structure includes an etching stop layer, a dielectric layer and an insert layer and a conductive line. The insert layer is located between the etching stop layer and the dielectric layer. The conductive line extends through the dielectric layer, the insert layer, and the etching stop layer. A material of the insert layer is different from the dielectric layer and the etching stop layer.
    Type: Application
    Filed: April 29, 2022
    Publication date: August 18, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Cheng Chou, Chung-Chi Ko, Tze-Liang Lee
  • Patent number: 11411109
    Abstract: An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region. The second silicon germanium region comprises a portion in the opening. The second silicon germanium region has a second germanium percentage greater than the first germanium percentage. A silicon cap substantially free from germanium is over the second silicon germanium region.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: August 9, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok
  • Publication number: 20220246473
    Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming a metal gate over the fin, the metal gate being surround by a dielectric layer; etching the metal gate to reduce a height of the metal gate, where after the etching, a recess is formed over the metal gate between gate spacers of the metal gate; lining sidewalls and a bottom of the recess with a semiconductor material; filling the recess by forming a dielectric material over the semiconductor material; forming a mask layer over the metal gate, where a first opening of the mask layer is directly over a portion of the dielectric layer adjacent to the metal gate; removing the portion of the dielectric layer to form a second opening in the dielectric layer, the second opening exposing an underlying source/drain region; and filling the second opening with a conductive material.
    Type: Application
    Filed: November 12, 2021
    Publication date: August 4, 2022
    Inventors: Jian-Hong Lu, Tsai-Jung Ho, Bor Chiuan Hsieh, Po-Cheng Shih, Tze-Liang Lee