Patents by Inventor Tze Poon
Tze Poon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8642128Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.Type: GrantFiled: April 12, 2010Date of Patent: February 4, 2014Assignee: Applied Materials, Inc.Inventors: Dongwon Choi, Dong Hyung Lee, Tze Poon, Manoj Vellaikal, Peter Porshnev, Majeed Foad
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Patent number: 8198180Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region.Type: GrantFiled: December 21, 2010Date of Patent: June 12, 2012Assignee: Applied Materials, Inc.Inventors: Jose Ignacio Del Agua Borniquel, Tze Poon, Robert Schreutelkamp, Majeed Foad
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Publication number: 20110092058Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region.Type: ApplicationFiled: December 21, 2010Publication date: April 21, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Jose Ignacio Del AGUA BORNIQUEL, Tze POON, Robert SCHREUTELKAMP, Majeed FOAD
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Patent number: 7858503Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.Type: GrantFiled: February 6, 2009Date of Patent: December 28, 2010Assignee: Applied Materials, Inc.Inventors: Jose Ignacio Del Agua Borniquel, Tze Poon, Robert Schreutelkamp, Majeed Foad
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Publication number: 20100273291Abstract: Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.Type: ApplicationFiled: March 24, 2010Publication date: October 28, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Olga Kryliouk, Jie Su, Kevin Griffin, Sung Won Jun, Sandeep Nijwahan, Xizi Dong, Tze Poon, Lori D. Washington, Jacob Grayson
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Publication number: 20100267224Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.Type: ApplicationFiled: April 12, 2010Publication date: October 21, 2010Applicant: APPLIED MATERIALS, INC.Inventors: DONGWON CHOI, DONG HYUNG LEE, TZE POON, MANOJ VELLAIKAL, PETER PORSHNEV, MAJEED FOAD
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Publication number: 20100200954Abstract: In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.Type: ApplicationFiled: February 6, 2009Publication date: August 12, 2010Inventors: JOSE IGNACIO DEL AGUA BORNIQUEL, Tze Poon, Robert Schreutelkamp, Majeed Foad
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Publication number: 20050191846Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: March 22, 2005Publication date: September 1, 2005Inventors: David Cheung, Wai-Fan Yau, Robert Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Poon
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Publication number: 20010005546Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: February 10, 1999Publication date: June 28, 2001Applicant: Applied Materials, Inc.Inventors: DAVID CHEUNG, WAI-FAN YAU, ROBERT P. MANDAL, SHIN-PUU JENG, KUO-WEI LIU, YUNG-CHENG LU, MIKE BARNES, RALF B. WILLECKE, FARHAD MOGHADAM, TETSUYA ISHIKAWA, TZE POON
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Publication number: 20010004479Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: November 4, 1998Publication date: June 21, 2001Inventors: DAVID CHEUNG, WAI-FAN YAU, ROBERT P. MANDAL, SHIN-PUU JENG, KUOWEI LIU, YUNG-CHENG LU, MIKE BARNES, RALF B. WILLECKE, FARHAD MOGHADAM, TETSUYA ISHIKOWA, TZE POON