Abstract: A high efficiency light emitting diode (LED) with metal reflector and the method of making the same is disclosed. The metal reflector is composed of at least two layers with one transparent conductive layer and the other highly reflective metal layer. The transparent conductive layer allows most of the light passing through without absorption and then reflected back by the highly reflective metal layer. The transparent conductive layer is selected from one of the materials that have very little reaction with highly reflective metal layer even in high temperature to avoid the reflectivity degradation during the chip processing. With this at least two layer metal reflector structure, the light emitting diode with vertical current injection can be fabricated with very high yield.

Abstract: Disclosed herein is a surface mounting method for high power output light emitting diode (LED). In the first preferred embodiment, the LED is mounted onto a thermal & electrical base-substrate, which has a plurality of trenches formed therein and filled with an insulating layer to isolate two parts of the base-substrate. A reflective frame assembler having a plurality of reflective frame is then adhered to the upper surface of the base-substrate. Each of them is for placing one LED chip. After a LED is with its two electrodes placed on a pair of the first metal contacts, the transparent resin or epoxy is refilled into reflective frame to seal the LED chip. In the second preferred embodiment, the LED is with two electrodes on the different side. Hence the LED is mounted on one metal contact only, the other electrode is in terms of a wire to bond to the other metal contact.

Abstract: A light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductibility and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only, requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.

Abstract: A light emitting epi-layer structure which contains a temporality light absorption substrate on one side, the other side thereof can be adhered to a light absorption free transparent substrate in terms of a transparent adhesive layer which is light absorption free too. After that, the light absorption substrate portion is removed by means of an etching process. The resulted light emitting diode has significant improvement in light emitting efficiency. Moreover, the transparent conductive layer is a low resistance and high transparency layer. The current flow can thus be distributed evenly than conventional one.

Abstract: A light emitting epi-layer structure which contains a temporality light absorption substrate on one side, the other side thereof can be adhered to a light absorption free transparent substrate in terms of a transparent adhesive layer which is light absorption free too. After that, the light absorption substrate portion is removed by means of an etching process. The resulted light emitting diode has significant improvement in light emitting efficiency. Moreover, the transparent conductive layer is a low resistance and high transparency layer. The current flow can thus be distributed evenly than conventional one.

Abstract: A light emitting diode (LED) is disclosed. An emitted light can be prevented from being absorbed by a substrate using a Bragg reflector layer with high reflectivity. The present invention provides a Bragg reflector layer comprising a plurality of high aluminum-containing AlGaAs/AlGaInP layers or high aluminum-containing AlGaAs/ low aluminum-containing AlGaInP layers formed on the substrate before the epitaxial structure of the light emitting diode being formed. Since the high aluminum-containing AlGaAs is oxidized and formed an oxide of a lower refraction index, the reflectivity and high reflection zones of the oxidized Bragg reflector layer are much larger. According to the electrical insulation characteristic of the oxide, the Bragg reflector layer can limit the current within the oxidized regions of high aluminum-containing AbGaAs layer. Therefore, the aforementioned light emitting diode structure has a higher brightness than the conventional light emitting diode.

Abstract: A high flux light emitting diode comprises a base substrate, a flip-chip type light emitting diode chip with a transparent substrate, and a cover substrate. The cover substrate has a center hole with a slanted reflective sidewall. The light emitting diode chip is disposed within the center hole. The base substrate is divided by a middle insulation region into two parts that connect the two electrodes of the light emitting diode chip. Highly thermally and electrically conductive material is used to form the base substrate for conducting a high current and dissipating heat efficiently. A transparent resin or epoxy is used to cover the enter hole and seal the diode chip. High intensity light can be emitted because the light is transmitted directly, reflected by a reflective electrode of the diode chip, or redirected by the reflective sidewall to exit the center hole of the cover substrate.

Abstract: A method for cutting Group III nitride semiconductor light emitting element comprises the step of discharge-etched on a front face of a chip or cutting channel of a substrate; and breaking on a back surface of the discharge-etching face to be formed with dies. This method is different from the prior art dicing saw and point scribe. Thus, the cutting time is shortened. The consumption of the diamond knife from cutting is reduced. The yield ratio of dies is improved and the outlook is also improved.

Abstract: A light emitting diode (LED) is disclosed. The problem of an emitting light absorbed by a substrate can be prevented by using a bragg reflector layer with high reflectivity. The present invention provides a high reflectivity bragg reflector layer to reflect the light generated from LED, which comprises high aluminum-contained AlGaAs/AlGaInP layers or high aluminum-contained AlGaAs/low aluminum-contained AlGaInP layers, formed on the substrate before the vertically stacked epitaxial structure of the light emitting diode is formed. Due to the higher oxidation ability of the high aluminum-contained AlGaAs layers and the lower refraction index of the oxide thereof, the wavelength reflected by the bragg reflector layer can cover a wider spectrum and the reflectivity thereof is very high. Since the oxidized AlGaAs layer is an electrical insulator, the present invention provides electrodes located on the same side of the light emitting diode.

Abstract: A method for fabricating high efficiency light-emitting diode (LED) adhered to a transparent substrate is disclosed. To begin with, forming a semiconductor substrate, is followed by sequentially forming an etching stopper, a first type ohmic contact layer, a double heterostructure and a second ohmic contact layer. Afterwards, the transparent substrate, such as preferably glass, is adhered onto the second ohmic contact layer and then the GaAs substrate is removed away. After that, the first type cladding layer and the undoped active layer is etched in turn by using the second type ohmic contact layer as the etching stopper. Finally, a first electrode is formed on the first type ohmic contact layer and a second electrode is formed on the second type ohmic contact layer, respectively. The present invention utilizes some features, such as high transmittance and lower absorptivity, of the glass adhered to the second ohmic contact layer to visible light for increasing luminous intensity of the LED.

Abstract: The present invention discloses a light-emitting device (LED) with a textured interface formed by utilizing holographic lithography. Two coherent light beams are overlaid to cause constructive and destructive interference and thereby periodical alternative bright and dark lines are formed. A wafer coated with a photoresist material is exposed under the interference lines. After a developing step, a photoresist pattern with textured surface is formed on the wafer. Thereafter, the textured photoresist pattern is transferred to the wafer by etching process and result in a desired light-emitting device with a textured interface.

Abstract: The present invention provides a method of manufacturing a light emitting diode based on an epitaxial layer structure. The epitaxial layer structure includes a substrate of a first conductivity type, a lower cladding layer of the first conductivity type formed on a top side of the substrate, an active layer formed on the lower cladding layer, an upper cladding layer of a second conductivity type formed on the active layer, at least one upper aluminum-rich layer formed on the upper cladding layer, and a cap layer formed on the at least one upper aluminum-rich layer. The method includes the steps of forming an opening hole in the epitaxial layer structure for passing through each upper aluminum-rich layer, oxidizing a predetermined region of each upper aluminum-rich layer, filling the opening hole with an insulating material, and forming an upper electrode on the cap layer and a lower electrode on a back side of the substrate.

Abstract: A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of elastic transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbing substrate is then removed to form a LED having a transparent substrate. By the use of the transparent substrate, the light emitting efficiency of the LED can be significantly improved.

Abstract: The present invention discloses a light emitting device which includes a substrate, a light emitting layer on the substrate, a current restriction layer on the light emitting layer, a current spreading layer on the current restriction layer, a dielectric layer on the current spreading layer defining an exposed area, a top ohmic contact metal layer on the exposed area, and a bottom ohmic contact metal layer under the substrate. The current spreading layer has a rough top surface. The current restriction layer includes a conductive layer that allows current to flow through, and an insulating layer around the conductive layer. The insulating layer prohibits the current from flowing through in a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer. The substrate is partially removed to form a cavity for avoiding substrate absorption.

Abstract: An interface texturing for light-emitting device is formed by utilizing holographic lithography. Two coherent light beams are overlaid to cause constructive and destructive interference and thereby periodical alternative bright and dark lines are formed. A wafer coated with photoresist material is exposed under the interference lines. After developing step, a photoresist pattern with textured surface is formed on the wafer. Thereafter, the textured photoresist pattern is transferred to the wafer by etching process and result in a desired interface texturing.

Abstract: A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbing substrate is then removed to form a LED having a transparent substrate. By the use of the transparent substrate, the light emitting efficiency of the LED can be significantly improved.

Abstract: A light emitting diode (LED) is disclosed. An emitted light can be prevented from being absorbed by a substrate by using a bragg reflector layer with high reflectivity. The present invention provides a bragg reflector layer comprising a plurality of high aluminum-contained AlGaAs/AlGaInP layers or high aluminumcontained AlGaAs/low aluminum-contained AlGaInP layers formed on the substrate before the epitaxial structure of the light emitting diode being formed. Since the high aluminum-contained AlGaAs is oxidized and formed an oxide of a lower refraction index, the reflectivity and high reflection zones of the oxidized bragg reflector layer are much larger. According to the electrical insulation characteristic of the oxide, the bragg reflector layer can limit the current within the oxidized regions of high aluminum-contained AlGaAs layer. Therefore, the aforementioned light emitting diode structure has a higher brightness than the conventional light emitting diode.

Abstract: A semiconductor light emitting device has a transparent substrate, an n-type semiconductor layer, a p-type semiconductor layer, an n-type transparent electrode, a p-type transparent electrode, an n-type bonding pad, and a p-type bonding pad. The n-type semiconductor layer is disposed over the transparent substrate. The p-type semiconductor layer and the n-type transparent electrode are provided on the n-type semiconductor layer and arranged alternatively to each other, where the p-type semiconductor layer and the n-type transparent electrode cover different portions of the n-type semiconductor layer respectively. The p-type transparent electrode is provided in contact with the p-type semiconductor layer. The n-type and p-type bonding pads are disposed on the n-type and p-type transparent electrodes respectively, and the areas of these bonding pads are smaller than the area of the corresponding electrodes.

Abstract: A method for fabricating high efficiency light-emitting diode (LED) adhered to a transparent substrate is disclosed. To begin with, forming a semiconductor substrate, is followed by sequentially forming an etching stopper, a first type ohmic contact layer, a double heterostructure and a second ohmic contact layer. Afterwards, the transparent substrate, such as preferably glass, is adhered onto the second ohmic contact layer and then the GaAs substrate is removed away. After that, the first type cladding layer and the undoped active layer is etched in turn by using the second type ohmic contact layer as the etching stopper. Finally, a first electrode is formed on the first type ohmic contact layer and a second electrode is formed on the second type ohmic contact layer, respectively. The present invention utilizes some features, such as high transmittance and lower absorptivity, of the glass adhered to the second ohmic contact layer to visible light for increasing luminous intensity of the LED.

Abstract: A method of making a light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductivity and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.