Patents by Inventor Tzong-Liang Tsai

Tzong-Liang Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6462357
    Abstract: The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound semiconductor layers are to grow thereon. It reduces the dislocation density resulted from the difference between the lattice constants of the GaN compound semiconductor layers and the substrate. It also improves the crystallization property of the III-nitride compound semiconductor.
    Type: Grant
    Filed: December 29, 2000
    Date of Patent: October 8, 2002
    Assignee: United Epitaxy Company, Ltd.
    Inventors: Tzong-Liang Tsai, Chih-Sung Chang
  • Publication number: 20020119587
    Abstract: The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
    Type: Application
    Filed: April 25, 2002
    Publication date: August 29, 2002
    Applicant: United Epitaxy Company, Ltd.
    Inventors: Tzong-Liang Tsai, Chung-Ying Chang
  • Patent number: 6441403
    Abstract: The present invention provides a semiconductor device with a roughened surface that increases external quantum efficiency thereof. Roughening of the semiconductor device surface is done by epitaxial growth techniques that may include hydride vapor phase epitaxy (HVPE) technique, organometallic vapor phase epitaxy (OMVPE) technique, or molecular beam epitaxy (MBE) technique.
    Type: Grant
    Filed: October 14, 2000
    Date of Patent: August 27, 2002
    Assignee: United Epitaxy Company, Ltd.
    Inventors: Chih-Sung Chang, Tzong-Liang Tsai, Chung-Ying Chang
  • Patent number: 6429102
    Abstract: The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
    Type: Grant
    Filed: February 3, 2000
    Date of Patent: August 6, 2002
    Assignee: United Epitaxy Company, Ltd.
    Inventors: Tzong-Liang Tsai, Chung-Ying Chang
  • Publication number: 20020068468
    Abstract: The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
    Type: Application
    Filed: February 3, 2000
    Publication date: June 6, 2002
    Inventors: Tzong-Liang Tsai, Chung-Ying Chang
  • Patent number: 6399408
    Abstract: The present invention provides a process for effectively producing a high performance light emitting device. A substrate on which an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer are formed is provided. The N-type semiconductor layer is cut to be discontinuous. Then the substrate is microwaved. Not only the present invention takes advantage of microwaving process for producing a high performance light emitting device, but also avoids the shortcoming of the device cracking due to over activation of the N-type semiconductor layer by microwave processing.
    Type: Grant
    Filed: February 15, 2001
    Date of Patent: June 4, 2002
    Assignee: United Epitaxy Company, Ltd.
    Inventors: Tzong-Liang Tsai, Charng-Shyang Jong
  • Publication number: 20020056840
    Abstract: The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound semiconductor layers are to grow thereon. It reduces the dislocation density resulted from the difference between the lattice constants of the GaN compound semiconductor layers and the substrate. It also improves the crystallization property of the III-nitride compound semiconductor.
    Type: Application
    Filed: December 29, 2000
    Publication date: May 16, 2002
    Applicant: UNITED EPITAXY COMPANY, LTD
    Inventors: Tzong-Liang Tsai, Chih-Sung Chang