Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.

Abstract: A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

Abstract: A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.

Abstract: A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer.

Abstract: A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.

Abstract: A light emitting diode with enhanced luminance and a method for manufacturing the light emitting diode are provided. The light emitting diode includes a substrate, a passivation layer including a material selected from a group consisting of a metal alloy, a metal oxide, a metal nitride, organic materials, inorganic materials and a combination thereof, a reflection layer, a first semiconductor layer, a multi-layer quantum well structure and a second semiconductor layer. The substrate possesses excellent electric/thermal conductivities.

Abstract: A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

Abstract: The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflecting layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface of the substrate. The p-type semiconductor layer covers the active layer. The reflecting layer is located on the p-type semiconductor layer and covered by the p-type electrode and has an area not less than the area of the p-type electrode and not more than a half of the area of the p-type semiconductor layer. The reflecting layer is a conductive layer with high reflectivity, and is formed under the p-type electrode to reflect light from the active layer, avoiding light of the light-emitting device being absorbed by the metal electrode.

Abstract: Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing aluminum. The stress-absorbing layer is located between a silicon substrate and a Group III nitride semiconductor, for alleviating stress resulted from different lattice constants between the Group III nitride substance and the silicon substrate, thereby preventing cracking of the Group III nitride semiconductor due to the stress. Further disclosed is a method of manufacturing Group III nitride semiconductor device.

Abstract: A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.

Abstract: Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing aluminum. The stress-absorbing layer is located between a silicon substrate and a Group III nitride semiconductor, for alleviating stress resulted from different lattice constants between the Group III nitride substance and the silicon substrate, thereby preventing cracking of the Group III nitride semiconductor due to the stress. Further disclosed is a method of manufacturing Group III nitride semiconductor device.

Abstract: The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflective layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface of the substrate. The p-type semiconductor layer covers the active layer. The reflective layer is located on the p-type semiconductor layer, and the p-type electrode covers the reflective layer. The reflective layer is a conductive layer with high reflectivity, and is formed under the p-type electrode to avoid light of the light-emitting device being absorbed by the metal electrode.

Abstract: A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

Abstract: A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

Abstract: A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.

Abstract: The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.

Abstract: The present invention provides a structure of white light-emitting diode (LED) and a method of making the same. The structure according to the present invention comprises two LED chips that have light-emitting layers of multi-layer epitaxial structure and emit the lights of one or more colors. The structure comprises an LED emitting the visible light of short wavelength, and another LED emitting the visible light of long wavelength. Wherein, at least one chip in the present invention has two or more transition energy levels used for emitting two or more colored lights. With the use of the present invention, multiple colored lights emitted by the LED can be mixed into full-spectral white light source having excellent color rendering property and high light emitting efficiency.

Abstract: The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.

Abstract: The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.

Abstract: The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.