Patents by Inventor Tzu Chang

Tzu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10490643
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: November 26, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Publication number: 20190337501
    Abstract: The disclosure provides an anti-lock brake device including an oil pressure tank, a first piston and a second piston. The oil pressure tank has an internal space, an oil inlet and an oil outlet that are connected to one another. The first piston is slidably located in the internal space, and has a first oil channel penetrating a contact portion of the first piston and connected to the oil inlet. The second piston is slidably located in the internal space and includes a push portion, and an outer diameter of the push portion is smaller than that of the contact portion. When the second piston is in a closed position, a chamber having a first unoccupied volume is formed in the internal space. When the second piston is moved from the closed position to a depressurized position, the first volume of the chamber is increased to a second volume.
    Type: Application
    Filed: April 30, 2019
    Publication date: November 7, 2019
    Inventors: Po-Hsien HUANG, Tzu-Chang WANG
  • Patent number: 10345691
    Abstract: A camera device includes a supporter, a plurality of camera units, a cover and a lens driving mechanism. The camera units are movably disposed on the supporter. The cover covers the supporter and the camera units. The lens driving mechanism includes a base, a pivoting component and a fixer. The base is disposed on the supporter. The pivoting component is disposed on the base. The fixer has a top surface and two supporting surfaces connected with each other. The supporting surfaces are used to support the camera units. The fixer includes a connective block disposed on a side of the supporting surface opposite to the top surface. The pivoting component is rotatably assembled with the connective block, so the fixer can rotate relative to the base and the camera units can be moved synchronously.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: July 9, 2019
    Assignee: VIVOTEK INC.
    Inventors: Chiung-Wei Tsai, Fang-Tzu Chang
  • Patent number: 10340350
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: July 2, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Patent number: 10252763
    Abstract: A seatpost has a post body, an adjusting mount, a connecting unit, and a connecting bracket. The post body has a supporting base disposed at an upper end of the post body. The supporting base has a bore formed through a rear end of the supporting base. The adjusting mount is connected to the supporting base and has a passing hole disposed at a rear end of the adjusting mount. The connecting unit is connected to the adjusting mount and has a connecting portion having a threaded hole. A bolt passes through the bore, the passing hole, and is screwed with the threaded hole. The connecting bracket has a front end connected to the connecting portion, a rear end opposite the front end, and an assembling board disposed at the rear end of the connecting bracket for assembling a taillight or a bicycle license plate.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: April 9, 2019
    Assignee: LEE CHI ENTERPRISES CO., LTD.
    Inventors: An-Fu Yu, Yu-Tzu Chang
  • Publication number: 20190086789
    Abstract: A camera device includes a supporter, a plurality of camera units, a cover and a lens driving mechanism. The camera units are movably disposed on the supporter. The cover covers the supporter and the camera units. The lens driving mechanism includes a base, a pivoting component and a fixer. The base is disposed on the supporter. The pivoting component is disposed on the base. The fixer has a top surface and two supporting surfaces connected with each other. The supporting surfaces are used to support the camera units. The fixer includes a connective block disposed on a side of the supporting surface opposite to the top surface. The pivoting component is rotatably assembled with the connective block, so the fixer can rotate relative to the base and the camera units can be moved synchronously.
    Type: Application
    Filed: August 21, 2018
    Publication date: March 21, 2019
    Inventors: Chiung-Wei Tsai, Fang-Tzu Chang
  • Publication number: 20180331193
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Application
    Filed: July 25, 2018
    Publication date: November 15, 2018
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Publication number: 20180261675
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Application
    Filed: March 8, 2017
    Publication date: September 13, 2018
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Patent number: 10074725
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 11, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Publication number: 20170334498
    Abstract: A seatpost has a post body, an adjusting mount, a connecting unit, and a connecting bracket. The post body has a supporting base disposed at an upper end of the post body. The supporting base has a bore formed through a rear end of the supporting base. The adjusting mount is connected to the supporting base and has a passing hole disposed at a rear end of the adjusting mount. The connecting unit is connected to the adjusting mount and has a connecting portion having a threaded hole. A bolt passes through the bore, the passing hole, and is screwed with the threaded hole. The connecting bracket has a front end connected to the connecting portion, a rear end opposite the front end, and an assembling board disposed at the rear end of the connecting bracket for assembling a taillight or a bicycle license plate.
    Type: Application
    Filed: April 26, 2017
    Publication date: November 23, 2017
    Inventors: An-Fu YU, Yu-Tzu CHANG
  • Patent number: 9728467
    Abstract: A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.
    Type: Grant
    Filed: October 12, 2015
    Date of Patent: August 8, 2017
    Assignee: United Microelectronics Corp.
    Inventors: Yun-Tzu Chang, Shih-Min Chou, Kuo-Chih Lai, Ching-Yun Chang, Hsiang-Chieh Yen, Yen-Chen Chen, Yang-Ju Lu, Nien-Ting Ho, Chi-Mao Hsu
  • Patent number: 9691704
    Abstract: A semiconductor structure comprises a first wire level, a second wire level and a via level. The first wire level comprises a first conductive feature. The second wire level is disposed on the first wire level. The second wire level comprises a second conductive feature and a third conductive feature. The via level is disposed between the first wire level and the second wire level. The via level comprises a via connecting the first conductive feature and the second conductive feature. There is a first air gap between the first conductive feature and the second conductive feature. There is a second air gap between the second conductive feature and the third conductive feature. The first air gap and the second air gap are linked.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: June 27, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Chia-Chang Hsu, Nien-Ting Ho, Ching-Yun Chang, Yen-Chen Chen, Shih-Min Chou, Yun-Tzu Chang, Yang-Ju Lu, Wei-Ming Hsiao, Wei-Ning Chen
  • Publication number: 20170148891
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Application
    Filed: November 24, 2015
    Publication date: May 25, 2017
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Publication number: 20170076995
    Abstract: A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.
    Type: Application
    Filed: October 12, 2015
    Publication date: March 16, 2017
    Inventors: Yun-Tzu Chang, Shih-Min Chou, Kuo-Chih Lai, Ching-Yun Chang, Hsiang-Chieh Yen, Yen-Chen Chen, Yang-Ju Lu, Nien-Ting Ho, Chi-Mao Hsu
  • Patent number: 9576803
    Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: February 21, 2017
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Kuo-Chih Lai, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Shih-Min Chou, Yun Tzu Chang, Fang-Yi Liu, Hsiang-Chieh Yen, Nien-Ting Ho
  • Publication number: 20160336181
    Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.
    Type: Application
    Filed: May 13, 2015
    Publication date: November 17, 2016
    Inventors: KUO-CHIH LAI, YANG-JU LU, CHING-YUN CHANG, YEN-CHEN CHEN, SHIH-MIN CHOU, YUN TZU CHANG, FANG-YI LIU, HSIANG-CHIEH YEN, NIEN-TING HO
  • Patent number: 9495974
    Abstract: A method of processing a sound track includes providing a low frequency threshold and a high frequency threshold of an audible frequency range; selecting a low-pitch sound band from a lowest frequency of an original sound track to the low frequency threshold and raising the low-pitch sound band by a predetermined frequency shift to a modified low-pitch sound band, or selecting a high-pitch sound band from the high frequency threshold to the highest frequency of the original sound track and lowering the high-pitch sound band by a predetermined frequency shift to a modified high-pitch sound band; and combining original sound track and modified low-pitch sound band or combining original sound track and modified high-pitch sound band. The low and high frequency thresholds are not correlated. The predetermined frequency shift is one octave or multiple octaves or equals 2n, where n is a positive integer or a negative integer.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: November 15, 2016
    Inventors: Tain-Tzu Chang, Chow-Ing Chang
  • Patent number: 9478628
    Abstract: A metal gate forming process includes the following steps. A first metal layer is formed on a substrate by at least a first step followed by a second step, wherein the processing power of the second step is higher than the processing power of the first step.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: October 25, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Nien-Ting HO, Chi-Mao Hsu, Ching-Yun Chang, Yen-Chen Chen, Yang-Ju Lu, Shih-Min Chou, Yun-Tzu Chang, Hsiang-Chieh Yen, Min-Chuan Tsai
  • Patent number: 8730432
    Abstract: An optical film is provided. The optical film includes a substrate, a first transmission medium, second transmission medium, and a reflective polarizing film. The first transmission medium is disposed at the front surface of the substrate and includes a plurality of embossed microlenses. The second transmission medium is disposed at the rear surface of the substrate and comprises a plurality of V-shaped prisms. The reflective polarizing film is disposed at the front surface of the first transmission medium. The substrate, the first transmission medium, and the second transmission medium are bounded to each other to form a unitary sheet.
    Type: Grant
    Filed: May 30, 2012
    Date of Patent: May 20, 2014
    Assignees: Innocom Technology (Shenzhen) Co. Ltd., Chimei Innolux Corporation
    Inventors: Tzu-Chang Wang, Li-Wei Mao, Hsin-Wen Chang, Yen-Liang Chen
  • Patent number: D858605
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: September 3, 2019
    Assignee: VIVOTEK INC.
    Inventors: Wei-Kai Tang, Fang-Tzu Chang, Chiung-Wei Tsai