Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.

Abstract: The disclosure provides an anti-lock brake device including an oil pressure tank, a first piston and a second piston. The oil pressure tank has an internal space, an oil inlet and an oil outlet that are connected to one another. The first piston is slidably located in the internal space, and has a first oil channel penetrating a contact portion of the first piston and connected to the oil inlet. The second piston is slidably located in the internal space and includes a push portion, and an outer diameter of the push portion is smaller than that of the contact portion. When the second piston is in a closed position, a chamber having a first unoccupied volume is formed in the internal space. When the second piston is moved from the closed position to a depressurized position, the first volume of the chamber is increased to a second volume.

Abstract: A camera device includes a supporter, a plurality of camera units, a cover and a lens driving mechanism. The camera units are movably disposed on the supporter. The cover covers the supporter and the camera units. The lens driving mechanism includes a base, a pivoting component and a fixer. The base is disposed on the supporter. The pivoting component is disposed on the base. The fixer has a top surface and two supporting surfaces connected with each other. The supporting surfaces are used to support the camera units. The fixer includes a connective block disposed on a side of the supporting surface opposite to the top surface. The pivoting component is rotatably assembled with the connective block, so the fixer can rotate relative to the base and the camera units can be moved synchronously.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A seatpost has a post body, an adjusting mount, a connecting unit, and a connecting bracket. The post body has a supporting base disposed at an upper end of the post body. The supporting base has a bore formed through a rear end of the supporting base. The adjusting mount is connected to the supporting base and has a passing hole disposed at a rear end of the adjusting mount. The connecting unit is connected to the adjusting mount and has a connecting portion having a threaded hole. A bolt passes through the bore, the passing hole, and is screwed with the threaded hole. The connecting bracket has a front end connected to the connecting portion, a rear end opposite the front end, and an assembling board disposed at the rear end of the connecting bracket for assembling a taillight or a bicycle license plate.

Abstract: A camera device includes a supporter, a plurality of camera units, a cover and a lens driving mechanism. The camera units are movably disposed on the supporter. The cover covers the supporter and the camera units. The lens driving mechanism includes a base, a pivoting component and a fixer. The base is disposed on the supporter. The pivoting component is disposed on the base. The fixer has a top surface and two supporting surfaces connected with each other. The supporting surfaces are used to support the camera units. The fixer includes a connective block disposed on a side of the supporting surface opposite to the top surface. The pivoting component is rotatably assembled with the connective block, so the fixer can rotate relative to the base and the camera units can be moved synchronously.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A seatpost has a post body, an adjusting mount, a connecting unit, and a connecting bracket. The post body has a supporting base disposed at an upper end of the post body. The supporting base has a bore formed through a rear end of the supporting base. The adjusting mount is connected to the supporting base and has a passing hole disposed at a rear end of the adjusting mount. The connecting unit is connected to the adjusting mount and has a connecting portion having a threaded hole. A bolt passes through the bore, the passing hole, and is screwed with the threaded hole. The connecting bracket has a front end connected to the connecting portion, a rear end opposite the front end, and an assembling board disposed at the rear end of the connecting bracket for assembling a taillight or a bicycle license plate.

Abstract: A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.

Abstract: A semiconductor structure comprises a first wire level, a second wire level and a via level. The first wire level comprises a first conductive feature. The second wire level is disposed on the first wire level. The second wire level comprises a second conductive feature and a third conductive feature. The via level is disposed between the first wire level and the second wire level. The via level comprises a via connecting the first conductive feature and the second conductive feature. There is a first air gap between the first conductive feature and the second conductive feature. There is a second air gap between the second conductive feature and the third conductive feature. The first air gap and the second air gap are linked.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.

Abstract: A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.

Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.

Abstract: The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.

Abstract: A method of processing a sound track includes providing a low frequency threshold and a high frequency threshold of an audible frequency range; selecting a low-pitch sound band from a lowest frequency of an original sound track to the low frequency threshold and raising the low-pitch sound band by a predetermined frequency shift to a modified low-pitch sound band, or selecting a high-pitch sound band from the high frequency threshold to the highest frequency of the original sound track and lowering the high-pitch sound band by a predetermined frequency shift to a modified high-pitch sound band; and combining original sound track and modified low-pitch sound band or combining original sound track and modified high-pitch sound band. The low and high frequency thresholds are not correlated. The predetermined frequency shift is one octave or multiple octaves or equals 2n, where n is a positive integer or a negative integer.

Abstract: A metal gate forming process includes the following steps. A first metal layer is formed on a substrate by at least a first step followed by a second step, wherein the processing power of the second step is higher than the processing power of the first step.

Abstract: An optical film is provided. The optical film includes a substrate, a first transmission medium, second transmission medium, and a reflective polarizing film. The first transmission medium is disposed at the front surface of the substrate and includes a plurality of embossed microlenses. The second transmission medium is disposed at the rear surface of the substrate and comprises a plurality of V-shaped prisms. The reflective polarizing film is disposed at the front surface of the first transmission medium. The substrate, the first transmission medium, and the second transmission medium are bounded to each other to form a unitary sheet.