Abstract: A method for fabricating Fiber Bragg Grating elements and planar light circuits made thereof. A mask having a predetermined pattern and a wafer are provided, wherein a light-guiding channel filled with light-guiding substance is formed on the wafer. A photoresist layer is then formed to cover the wafer. Magnification of a photolithography apparatus is adjusted to a first Mag., followed by transferring the pattern on the mask to the photoresist layer to form a first pattern. Light-guiding substance not covered by the photoresist layer is then removed so that the first pattern is transferred to the light-guiding channel. The light-guiding channel then forms a Fiber Bragg Grating element.

Abstract: A flip-chip electrode light-emitting element formed by multilayer coatings where a translucent conducting layer and a highly reflective metal layer acts as flip-chip electrode for enhancing the LED luminous efficiency. The flip-chip electrode light-emitting element includes a translucent substrate, a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, and an intermediate layer adapted to support the inverted semiconductor die structure on a submount. The flip-chip electrode formed by multiplayer coatings includes a current-spreading transparent conducting layer formed on a top side of the second type semiconductor layer, a highly reflective metal layer formed on a top side of the transparent conducting layer, a metallic diffusion barrier layer formed on a top side of the highly reflective metal layer, and a bonding layer electrically coupled to the intermediate layer and formed on a top side of the barrier layer.

Abstract: A method of fabricating light emitting diodes (LED) with a colour purifying diffraction lattice (CPDL) is suggested, the essence of the invention is in the use of the coherent scattering of the light by the CPDL for colour purifying of the light emitted by the LED and enhancement its extraction efficiency, the CPDL is a hexagonal two-dimensional periodical pattern on the surface of the LED structure or an internal interface resulting in the periodical variation in the refractive index with the period d The period of CPDL satisfies the equation d=m?/n, where m is a positive integer number, ? is the wavelength of the light generated by LED, and n is the refraction index of LED structure. The height of the hexagonal islands forming CPDL is h=?(2l+1)/2n, l is a positive integer number or zero. Use of CPDL allows to convert the laterally propagating light into the vertically propagating and simultaneously filter its spectrum.

Abstract: A method for fabricating Fiber Bragg Grating elements and planar light circuits made thereof. A mask having a predetermined pattern and a wafer are provided, wherein a light-guiding channel filled with light-guiding substance is formed on the wafer. A photoresist layer is then formed to cover the wafer. Magnification of a photolithography apparatus is adjusted to a first magnification, followed by transferring the pattern on the mask to the photoresist layer to form a first pattern. Light-guiding substance not covered by the photoresist layer is then removed so that the first pattern is transferred to the light-guiding channel. The light-guiding channel then forms a Fiber Bragg Grating element.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: A method for fabricating Fiber Bragg Grating elements and planar light circuits made thereof. A mask having a predetermined pattern and a wafer are provided, wherein a light-guiding channel filled with light-guiding substance is formed on the wafer. A photoresist layer is then formed to cover the wafer. Magnification of a photolithography apparatus is adjusted to a first Mag., followed by transferring the pattern on the mask to the photoresist layer to form a first pattern. Light-guiding substance not covered by the photoresist layer is then removed so that the first pattern is transferred to the light-guiding channel. The light-guiding channel then forms a Fiber Bragg Grating element.

Abstract: The electrode test strip is used with an electrochemical sensor for measuring an analyte in an aqueous sample, e.g., glucose in blood. The electrode strip includes an elongated electrode support, a first and second electrode on the support, a slotted dielectric layer, a screen and a slotted cover layer, all disposed atop each and atop the electrodes in the support. The dielectric layer and the cover layer are typically adhesively attached (the adhesive layers further define the slot). The slot is open to the terminal end of the test strip and the cover. The screen, interposed in the slot, has a porosity between 10%-40% to control analyte flow and volume in the slot and over the test area defined by electrode legs. Further refinements include utilizing a surfactant on the screen.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A case for a backlight module includes a housing body which receives a light source and has an opening directed toward a liquid crystal panel. A reflection layer is provided on a surface of the housing body to reflect the light emitted from the light source. The reflection layer has high weather-resistance and includes a resinous matrix material incorporating a UV/light stabilizer and a light-reflecting agent.

Abstract: A full-color light-emitting diode (LED) having a red LED die, a blue LED die, and a green LED die. The red LED die serves as a supporting material on which the blue LED die and the green LED die are separately mounted in such a manner that the red LED die is not completely covered to reserve a red-light emitting surface. In this way, the red, blue, and green LED die forms a double-layer full-color LED to facilitate the packaging operation, to ensure a more compact mixture of red, green, and blue lights and to achieve an exact wave-mixing effect for obtaining a full-color light.

Abstract: A light emitting device includes a substrate, an n-type semiconductor layer and a p-type semiconductor layer formed on the surface of the substrate, an n-electrode formed on the n-type semiconductor layer, an evenly spread ohmic contact layer formed on the p-type semiconductor layer in the form of evenly spread dots, a net, or a honeycomb, and a transparent conducting layer selected from ITO or ZnO and covered on the ohmic contact layer.

Abstract: A blue LED epitaxial wafer grown on an Al2O3 substrate, the blue LED epitaxial wafer having a contact electrode on the bottom side after removal of the Al2O3 substrate, conducting terminals formed on the top side, and a substitute substrate selected from chrome, tungsten, molybdenum, copper, copper chrome alloy, copper molybdenum alloy, copper tungsten alloy, molybdenum tungsten alloy, or their combination alloy and bonded to the top side and connected to the conducting terminals.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: The electrode test strip is used with an electrochemical sensor for measuring an analyte in an aqueous sample, e.g., glucose in blood. The electrode strip includes an elongated electrode support, a first and second electrode on the support, a slotted dielectric layer, a screen and a slotted cover layer, all disposed atop each and atop the electrodes in the support. The dielectric layer and the cover layer are typically adhesively attached (the adhesive layers further define the slot). The slot is open to the terminal end of the test strip and the cover. The screen, interposed in the slot, has a porosity between 10%-40% to control analyte flow and volume in the slot and over the test area defined by electrode legs. Further refinements include utilizing a surfactant on the screen.

Abstract: A method for fabricating Fiber Bragg Grating elements and planar light circuits made thereof. A mask having a predetermined pattern and a wafer are provided, wherein a light-guiding channel filled with light-guiding substance is formed on the wafer. A photoresist layer is then formed to cover the wafer. Magnification of a photolithography apparatus is adjusted to a first Mag., followed by transferring the pattern on the mask to the photoresist layer to form a first pattern. Light-guiding substance not covered by the photoresist layer is then removed so that the first pattern is transferred to the light-guiding channel. The light-guiding channel then forms a Fiber Bragg Grating element.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A HomePNA device with the function of transmitting power over a network wire, which connects to another HomePNA device via the network wire and transmits power using a non-data signal line in the communications protocol. The HomePNA device contains a first and second network wire connection ports for network wire terminals to plug in so as to receive and transmit data signals according to the communications protocol and to receive or transmit power provided via the non-data signal line; a power input port, which receives the external power provided through the power terminal and has a switch; and a plurality of sets of phone line connection ports for connecting data transmitting phone lines to the computer host. When the power input terminal is plugged with a power terminal, the switch is inactive and connects the non-data signal line of the first network connection port to the non-data signal line of the second network connection port and an internal control circuit.

Abstract: A rack is formed of a fastening mount, a support arm, and a C-shaped holder. The fastening mount is fastened to a wall by a plurality of fastening screws. The support arm is extended from the support arm and is intended to hold a cylindrical container.

Abstract: A semiconductor light emitting diode includes a first conductivity type compound semiconductor substrate, a first conductivity type lower cladding layer, an active layer of undoped AlGaInP or multiple quantum well structure, and a second conductivity type upper cladding structure. The upper cladding structure comprises an (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P four element compound semiconductor material. The improvement is that the upper cladding structure has a thin and very high resistivity layer inside.