Abstract: This invention provides a carrier or submount for high power devices packaging and a method for forming the carrier or submount. The carrier comprises a thermal conductive ceramic substrate, a patterned adhesion layer on the substrate, a heat dissipation layer on the patterned adhesion layer, a conformal cover layer enclosing the heat dissipation layer and the adhesion layer, a lateral heat dissipation layer on the substrate and between the cover layer on the first region and the cover layer on the second region, a diffusion barrier layer on the conformal cover layer, and an eutectic bonding layer on the diffusion barrier layer. The substrate includes a first region for bonding high power device, a second region for wire-bonding, and a third region for heat sink. The first region and second region are on a first surface of the substrate, and the third region is one the second surface, opposite to the first surface, of the substrate.

Abstract: This invention provides a carrier or submount for high power devices packaging and a method for forming the carrier or submount. The carrier comprises a thermal conductive ceramic substrate, a patterned adhesion layer on the substrate, a heat dissipation layer on the patterned adhesion layer, a conformal cover layer enclosing the heat dissipation layer and the adhesion layer, a diffusion barrier layer on the conformal cover layer, and an eutectic bonding layer on the diffusion barrier layer. The substrate includes a first region for bonding high power device, a second region for wire-bonding, and a third region for heat sink. The first region and second region are on a first surface of the substrate, and the third region is one the second surface, opposite to the first surface, of the substrate.

Abstract: This invention provides a carrier or submount for high power devices packaging and a method for forming the carrier or submount. The carrier comprises a thermal conductive ceramic substrate, a patterned adhesion layer on the substrate, a heat dissipation layer on the patterned adhesion layer, a conformal cover layer enclosing the heat dissipation layer and the adhesion layer, a diffusion barrier layer on the conformal cover layer, an eutectic bonding layer on the diffusion barrier layer, and a dissipation ceramic substrate with an L-shape bonding conductor, wherein one end of the L-shape bonding conductor bonds to the power device and the other end bonds to the conformal cover layer at the second region. The substrate includes a first region for bonding high power device, a second region for wire-bonding, and a third region for heat sink. The first region and second region are on a first surface of the substrate, and the third region is one the second surface, opposite to the first surface, of the substrate.

Abstract: This invention provides a carrier or submount for high power devices packaging and a method for forming the carrier or submount. The carrier comprises a thermal conductive ceramic substrate with at least one recess region, a patterned adhesion layer on the substrate, a heat dissipation layer on the patterned adhesion layer, a conformal cover layer enclosing the heat dissipation layer and the adhesion layer, a diffusion barrier layer on the conformal cover layer, and an eutectic bonding layer on the diffusion barrier layer. The substrate includes a first region for bonding high power device, a second region for wire-bonding, and a third region for heat sink. The first region and second region are on a first surface of the substrate, and the third region is one the second surface, opposite to the first surface, of the substrate.

Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The light emitting diode structure is square. The structural supporting area is positioned at a side of the top portion and protrudes from the surface of the bottom portion beside the top portion along the same direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.

Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The light emitting diode structure is square. The structural supporting area is positioned at a side of the top portion and protrudes from the surface of the bottom portion beside the top portion along the same direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.

Abstract: A light emitting diode includes a substrate, an epitaxial structure, a light absorbing material, an n-type electrode, and a p-type electrode. The epitaxial structure includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer formed sequentially on the substrate. The epitaxial structure includes a first recess and a second recess. The first recess extends toward the n-type semiconductor layer. The light absorbing material is received within the second recess. The n-type electrode is received within the first recess and forms an ohmic contact with the n-type semiconductor layer. The p-type electrode forms an ohmic contact with the p-type semiconductor layer. The p-type electrode, the light absorbing material, and the n-type electrode are sequentially spaced apart.

Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The light emitting diode structure is square. The structural supporting area is positioned at a side of the top portion and protrudes from the surface of the bottom portion beside the top portion along the same direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.

Abstract: The present invention relates to a flexible light source structure. The flexible light source structure includes a flexible insulating layer, a conductive trace layer formed on the flexible insulating layer, a plurality of light emitting diodes formed on the conductive trace layer and a packaging layer. The packaging layer covers the light emitting diodes and filling the gaps between the light emitting diodes.

Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The bottom portion is wider than the top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The structural supporting area protrudes from the surface of the bottom portion beside the top portion along the same single direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is at least arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.

Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The bottom portion is wider than the top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The structural supporting area protrudes from the surface of the bottom portion beside the top portion along the same single direction. Atop of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is at least arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.

Abstract: A method for manufacturing a light emitting diode (LED) chip comprises steps of stacking together a first substrate, a buffer layer, an ultraviolet light (UV) shielding layer, and at least one LED chip in that sequence. An orthogonal projection of each LED chip on the UV shielding layer is located in the scope of the UV shielding layer, and a periphery of the UV shielding layer protrudes from a periphery of the orthogonal projection; mounting a side of each LED chip facing away from the first substrate on the second substrate with an adhesive layer; irradiating UV light from a side of the first substrate facing away from the LED chip, to separate the first substrate from the UV shielding layer; removing the UV light shielding layer, the second substrate, and the adhesive layer from each LED chip.

Abstract: A light emitting diode comprises a light emitting diode chip and a packaging layer. The light emitting diode chip comprises a N-semiconductor layer, a light active layer, and a P-semiconductor layer arranged from a bottom to a top in that sequence, a first electrode, and a second electrode. The first electrode is formed on the P-semiconductor layer. The second electrode is formed on the N-semiconductor layer. The packaging layer covers the light emitting diode chip, and exposes the N-semiconductor layer, the first electrode, and the second electrode. The packaging layer has a through hole separated from a periphery of the light emitting diode chip. A conductive substrate fills the through hole. A first conductive layer is electrically connected to the first electrode and the conductive substrate. The disclosure also provides a method for manufacturing a light emitting diode.

Abstract: A light emitting diode include a light emitting chip, a first reflecting layer surrounding the light emitting diode chip, a first encapsulation layer and a second encapsulation layer covering on the light emitting diode chip. The light emitting chip has a light exiting surface, a first electrode and a second electrode. the first electrode and the second electrode are located opposite to the light exiting surface. Further, a second reflecting layer surrounds the periphery of the light emitting chip and also locates between the first encapsulation layer and the second encapsulation layer. A reflectivity of the first reflecting layer is greater than a reflectivity of the first reflecting layer. A bottom surface of the first electrode and the second electrode are exposed from the first reflecting layer.

Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.

Abstract: A light emitting diode chip comprises a light emitting diode chip core and a coating layer. The coating layer covers side surfaces of the light emitting diode chip core. And a display composed of the light emitting diode chips is also provided.