Abstract: A light emitting diode includes a light emitting structure, a transparent conductive layer and a transparent protecting layer formed in sequence. A plurality of holes are defined in the transparent protecting layer to expose the transparent conductive layer out of the transparent protecting layer. A plurality of micro-structures are formed on a top surface of the transparent conductive layer in the holes. The micro-structures refract light emitted from the light emitting structure and travelling through the transparent conductive layer.

Abstract: A method for manufacturing a light emitting diode includes providing an epitaxial wafer having a substrate and an epitaxial layer allocated on the substrate. The epitaxial layer comprises a first semiconductor layer, an active layer, a second semiconductor layer sequentially allocated, and at least one blind hole penetrating the second semiconductor layer, the active layer and inside the first semiconductor layer; then a first electrode is formed on the first semiconductor layer inside the at least one blind hole and a second electrode is formed on the second semiconductor layer; thereafter a first supporting layer is allocated on the first electrode and a second supporting layer is allocated on the second electrode.

Abstract: A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers.

Abstract: A method for manufacturing an LED (light emitting diodes) package includes providing a substrate having electrodes; providing an LED chip, the LED chip arranged on the substrate and electrically contacting the electrodes; providing an UV-curing adhesive layer, the UV-curing adhesive layer arranged on the substrate and entirely packaging the LED chip and the electrodes therein, and then the UV-curing adhesive layer being solidified.

Abstract: A method for manufacturing a light emitting diode includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a transitional layer on the buffer layer, the buffer layer being made of InGaN; forming an epitaxial layer on the transitional layer; activating the transitional layer by a way of radiating the transitional layer using laser; and when radiated with a laser, the transitional layer separates from the epitaxial layer.

Abstract: An LED die comprises a substrate and an epitaxial layer formed thereon. The epitaxial layer comprises a first n-type semiconductor layer, an active layer and a p-type semiconductor layer grown on the substrate in sequence. The LED die defines a receiving recess formed in a center of a top face of the p-type semiconductor layer. The receiving recess extends through the p-type semiconductor layer, the active layer and into the n-type semiconductor layer along a top-to-bottom direction of the epitaxial layer. A pair of p-pads are located at two opposite sides of the p-type semiconductor layer, respectively. A first n-pad is received in the receiving recess and located on the n-type layer.

Abstract: An LED die includes a substrate, a light emitting structure, electrodes, a first transparent protecting layer, a reflection layer, and a second transparent protecting layer. The light emitting structure includes a first semiconductor layer, an active layer, a second semiconductor layer successively formed on the substrate. A part of first semiconductor layer being exposed. A first electrode is formed the first semiconductor layer. A second electrode is formed on the second semiconductor layer. The first transparent protecting layer, the reflection layer, and the second transparent protecting layer successively formed on the first electrode. The present disclosure also provides a method of manufacturing the LED die.

Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting layer, and the second n-type GaN layer are formed on the substrate in sequence. The connecting layer is etchable by alkaline solution, and a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughed exposed portion. The GaN on the bottom surface of the second n-type GaN layer is N-face GaN. A top surface of the second n-type GaN layer facing away from the connecting layer includes a first area and a second area. The light emitting layer and the p-type GaN layer are formed on the first area of the top surface of the second n-type GaN layer in sequence.

Abstract: A method of manufacturing an LED chip includes: providing a laminated structure with a nanoimprinted material coated thereon; providing an imprinted mold with a patterned structure for pressing and curing the nanoimprinted material, removing the imprinted mold, etching the nanoimprinted material and the laminated structure; and forming electrodes on the etched laminated structure. An LED chip is also provided.

Abstract: A light emitting diode (LED) die includes a first semiconductor layer, a second semiconductor layer, an active layer interposed between the first and second semiconductor layers, a transparent electrically conductive layer formed on the second semiconductor layer, and a passivation layer formed on the transparent electrically conductive layer. A first electrode is electrically connected with the first semiconductor layer, and a second electrode is is electrically connected with the second semiconductor layer. The transparent electrically conductive layer is made of tin doped indium oxide. The passivation layer is made of silicon nitride having a refractive index close to that of the transparent electrically conductive layer.

Abstract: A method of photocuring a coating film includes steps: providing a component, and coating the coating film on the component; then a pulse UV LED light source is used to irradiate the coating film to thereby solidify the coating film. During the on time of the pulse UV light source, it supplies a UV light with an enhanced intensity to the coating film to cause a top surface of the coating film to be cured quickly. Accordingly, a reaction between oxygen and free radicals in the coating film can be effectively avoided.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting chip and a transparent conductive layer formed on the semiconductor light emitting chip. The semiconductor light emitting chip includes a substrate, and a first semiconductor layer, an active layer and a second semiconductor layer successively formed on the substrate. The transparent conductive layer is formed on the second semiconductor layer. A first electrode and a second electrode are respectively arranged on the transparent conductive layer and the first semiconductor layer. The transparent conductive layer has a roughened structure. A method of manufacturing a semiconductor light emitting device is also provided.

Abstract: A light emitting diode (LED) includes a substrate, a semiconductor structure formed on the substrate, and two electrodes formed on the semiconductor structure. The semiconductor structure includes a bearing surface via which light generated by the semiconductor structure radiates out of the LED. A plurality of microstructures is formed on the bearing surface. A cross section of each microstructure is rectangular triangular having a vertical side surface. Each microstructure includes a top surface. The top surface is inclined relative to the bearing surface.

Abstract: A method for manufacturing a light emitting diode chip includes the following steps: providing an epitaxial structure having an epitaxial layer; forming a first electrode and a second electrode on the epitaxial layer; coating an inert layer on the epitaxial structure, the first electrode and the second electrode continuously; annealing the first electrode and the second electrode; and removing the inert layer coated on the first electrode and the second electrode to expose the first electrode and the second electrode.

Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the second n-type GaN layer faces towards the connecting layer and has a roughened exposed portion. The GaN on the bottom surface of the second n-type GaN layer has an N-face polarity. A blind hole extends through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer. An annular rough portion is formed on the bottom surface of the second n-type GaN layer and surrounds each blind hole.

Abstract: A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity.

Abstract: An LED array includes a substrate and a plurality of LEDs formed on the substrate. The LEDs are electrically connected with each other. Each of the LEDs includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the n-type GaN layer which connects the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity. A method for manufacturing the LED array is also provided.

Abstract: An LED includes a base and an LED die grown on the base. The LED die includes two spaced electrodes and two exposed semiconductor layers. The two electrodes are respectively formed on top surfaces of the two semiconductor layers. At least one of the electrodes extends downwardly from the top surface of the corresponding semiconductor layer along a lateral edge of the LED die to electrically connect an exterior electrode via transparent conducting resin.

Abstract: A light emitting diode (LED) epitaxy structure includes an N-type semiconductor layer; an active layer arranged on the N-type semiconductor layer, and a P-type semiconductor layer arranged on the active layer. A horizontal cross-sectional area defined by the active layer is a parallelogram, and none of the internal angles of the parallelogram is a right angle.

Abstract: A light emitting diode (LED) includes a base, an LED die grown on the base, a transparent electrically conductive layer formed on a side of the LED die, a protecting layer covering the transparent electrically conductive layer, and a phosphor layer formed on the protecting layer. Through holes extend through the phosphor layer and the protecting layer to make part of light emitted from the LED die directly traveling out from the through holes to illuminate. A method for manufacturing the LED is also provided.