Abstract: An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the bottom of the recess. The encapsulating layer is in the recess and covers the LED die. The LED package further includes a metal layer formed on the second surface and the lateral surface of the substrate. A pair of electrodes is located at the bottom of the recess and extends through the metal layer. An insulated material is filled between the transparent substrate and the electrodes. Light emitted from the LED die is transmitted through the transparent substrate and reflected by the metal layer.

Abstract: A light-emitting element includes a substrate, a light-emitting module and at least two electrodes. The light-emitting module is formed on the substrate. The at least two electrodes are formed on the light-emitting module. Exterior surfaces of the light-emitting module are separated into a first part and a second part. The first part is defined between the at least two electrodes and the light-emitting module. The second part includes exterior surfaces not contacting the at least two electrodes. The first part is smooth. At least a part of the second part is rough.

Abstract: A light emitting diode (LED) chip includes a first electrode and a second electrode. Each of the first and second electrodes includes several trunks with at least one branch extending from at least one of the trunk, and at least one conductive pad serially connecting the trunks. A distance between a distal end of the branch of the first electrode and the conductive pad of the second electrode is less than that between any of other portions of the branch of the first electrode and the conductive pad of the second electrode, to thereby avoid crowded electric current formed at the first electrode and the conductive pad of the second electrode to save power accordingly.

Abstract: A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure.

Abstract: An LED package includes a base, an LED chip, and an encapsulant. The LED chip is mounted on the base, and is enclosed by the encapsulant. The base includes a substrate and a blocking wall integrally formed with the substrate. The blocking wall divides a surface of the substrate into a first bonding area and a second bonding area. An electrically conductive layer and a solder are formed on the bonding area in sequence. The blocking wall can block the first and second solder to overflow outside the first and second bonding area at soldering respectively. A method for manufacturing the LED package is also provided.

Abstract: An LED chip includes a transparent substrate and a number of lighting structure units each including a p-type semiconductor and an n-type semiconductor and a recess extending from the p-type semiconductor to the n-type semiconductor. The recess is filled with metal material which covers the surface of the lighting structure units. By filling the recess with metal material, the heat generated by the lighting structure units can rapidly transfer to the metal material. A method for manufacturing the light emitting diode chip is also provided.

Abstract: An LED die includes a multi-layer semiconductor with a first surface, a second surface opposite to the first surface, an inclined plane connecting to the first surface and the second surface, a first electrode and a second electrode respectively positioned on the first surface and the second surface, a first heat dissipation layer made of electrically-insulating and thermally conductive material being coated on the first surface and the inclined plane with a first opening exposing the first electrode, and a second heat dissipation layer made of electrically and thermally conductive material being coated on the first heat dissipation layer and contacting and electrically connecting with the first electrode.

Abstract: A high brightness light emitting diode includes a carrier substrate and an epitaxial multi-layer formed thereon. The carrier substrate includes a metal material and a medium, and a coefficient of thermal expansion (CTE) of the medium is less than a CTE of the metal material.

Abstract: The present invention provides a method and system for non-cash cash-on-delivery. In the conventional process of the cash-on-delivery in logistics, a wireless communication apparatus is provided to read the information of the identification docket number and a non-cash payment tool, and the information is transported to the logistics server so as to accomplish the mechanism of the collecting-and-paying for another with a financial institution.

Abstract: The present invention discloses a voltage shifter capable of interfacing between two circuitry each is operating in different voltage range. The voltage shifter comprises an input buffer for converting an external input signal switching within a high voltage range to an internal input signal switching within a low voltage range, an output driver for converting an internal output signal switching within the low voltage range to an external output signal switching within the high voltage range; and a reference voltage generator for generating a reference voltage to the input buffer and the output driver. In addition, the voltage shifter is designed such that each of the transistors within is protected against voltage breakdown so that the voltage shifter can be built by transistors using the low voltage process.