Patents by Inventor Tzu-Chin Wu
Tzu-Chin Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230005795Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.Type: ApplicationFiled: August 3, 2021Publication date: January 5, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Po-Ching Su, Yu-Fu Wang, Min-Hua Tsai, Ti-Bin Chen, Chih-Chiang Wu, Tzu-Chin Wu
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Patent number: 10790289Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.Type: GrantFiled: September 26, 2019Date of Patent: September 29, 2020Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Chih-Chien Liu, Tzu-Chin Wu, Po-Chun Chen, Chia-Lung Chang
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Patent number: 10770464Abstract: A method for fabricating semiconductor device includes the steps of: forming a bit line structure on a substrate; forming a first spacer, a second spacer, and a third spacer around the bit line structure; forming an interlayer dielectric (ILD) layer on the bit line structure; planarizing part of the ILD layer; removing the ILD layer and the second spacer to form a recess between the first spacer and the third spacer; and forming a liner in the recess.Type: GrantFiled: February 14, 2018Date of Patent: September 8, 2020Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Chih-Chien Liu, Chia-Lung Chang, Tzu-Chin Wu, Wei-Lun Hsu
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Patent number: 10672864Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.Type: GrantFiled: March 11, 2019Date of Patent: June 2, 2020Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Tzu-Chin Wu, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Po-Chun Chen, Li-Wei Feng, Ying-Chiao Wang, Wen-Chieh Lu, Chien-Ting Ho, Tsung-Ying Tsai, Kai-Ping Chen
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Publication number: 20200020693Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.Type: ApplicationFiled: September 26, 2019Publication date: January 16, 2020Inventors: Chih-Chien Liu, Tzu-Chin Wu, Po-Chun Chen, Chia-Lung Chang
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Patent number: 10468417Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.Type: GrantFiled: April 23, 2018Date of Patent: November 5, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Chih-Chien Liu, Tzu-Chin Wu, Po-Chun Chen, Chia-Lung Chang
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Patent number: 10446559Abstract: A method of fabricating a DRAM includes providing a substrate. Later, a first mask layer is formed to cover the substrate. The first mask layer includes a hydrogen-containing silicon nitride layer and a silicon oxide layer. The hydrogen-containing silicon nitride layer has the chemical formula: SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1. After that, the first mask layer is patterned to form a first patterned mask layer. Next, the substrate is etched by taking the first patterned mask layer as a mask to form a word line trench. Subsequently, the first patterned mask layer is removed entirely. Finally, a word line is formed in the word line trench.Type: GrantFiled: August 2, 2018Date of Patent: October 15, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Tzu-Chin Wu, Chao-An Liu, Ching-Hsiang Chang, Yi-Wei Chen
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Publication number: 20190287976Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.Type: ApplicationFiled: April 23, 2018Publication date: September 19, 2019Inventors: Chih-Chien Liu, Tzu-Chin Wu, Po-Chun Chen, Chia-Lung Chang
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Publication number: 20190221570Abstract: A method for fabricating semiconductor device includes the steps of: forming a bit line structure on a substrate; forming a first spacer, a second spacer, and a third spacer around the bit line structure; forming an interlayer dielectric (ILD) layer on the bit line structure; planarizing part of the ILD layer; removing the ILD layer and the second spacer to form a recess between the first spacer and the third spacer; and forming a liner in the recess.Type: ApplicationFiled: February 14, 2018Publication date: July 18, 2019Inventors: Chih-Chien Liu, Chia-Lung Chang, Tzu-Chin Wu, Wei-Lun Hsu
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Publication number: 20190206982Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.Type: ApplicationFiled: March 11, 2019Publication date: July 4, 2019Inventors: Tzu-Chin Wu, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Po-Chun Chen, Li-Wei Feng, Ying-Chiao Wang, Wen-Chieh Lu, Chien-Ting Ho, Tsung-Ying Tsai, Kai-Ping Chen
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Patent number: 10332888Abstract: A method of manufacturing memory devices is provided in the present invention. The method includes the steps of providing a substrate with multiple capacitors, wherein the capacitor includes a lower electrode layer, an insulating layer and an upper electrode layer and a top plate, forming a tungsten layer on the upper electrode, performing a nitriding plasma treatment to the tungsten layer to form a tungsten nitride layer, and forming a pre-metal dielectric layer on the tungsten nitride layer.Type: GrantFiled: November 13, 2017Date of Patent: June 25, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Chih-Chien Liu, Chia-Lung Chang, Han-Yung Tsai, Tzu-Chin Wu
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Patent number: 10312080Abstract: The present invention provides a method for forming an amorphous silicon multiple layer structure, the method comprises the flowing steps: first, a substrate material layer is provided, next, a first amorphous silicon layer is formed on the substrate material layer, wherein the first amorphous silicon layer includes a plurality of hydrogen atoms disposed therein, afterwards, an UV curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer, finally, a second amorphous silicon layer is formed on the first amorphous silicon layer.Type: GrantFiled: January 2, 2018Date of Patent: June 4, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Mei-Ling Chen, Wei-Hsin Liu, Yi-Wei Chen, Ching-Hsiang Chang, Jui-Min Lee, Chia-Lung Chang, Tzu-Chin Wu, Shih-Fang Tzou
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Publication number: 20190148382Abstract: A method of manufacturing memory devices is provided in the present invention. The method includes the steps of providing a substrate with multiple capacitors, wherein the capacitor includes a lower electrode layer, an insulating layer and an upper electrode layer and a top plate, forming a tungsten layer on the upper electrode, performing a nitriding plasma treatment to the tungsten layer to form a tungsten nitride layer, and forming a pre-metal dielectric layer on the tungsten nitride layer.Type: ApplicationFiled: November 13, 2017Publication date: May 16, 2019Inventors: Chih-Chien Liu, Chia-Lung Chang, Han-Yung Tsai, Tzu-Chin Wu
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Patent number: 10276650Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.Type: GrantFiled: March 21, 2018Date of Patent: April 30, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Tzu-Chin Wu, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Po-Chun Chen, Li-Wei Feng, Ying-Chiao Wang, Wen-Chieh Lu, Chien-Ting Ho, Tsung-Ying Tsai, Kai-Ping Chen
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Patent number: 10262895Abstract: The present invention provides a method for fabricating a semiconductor device, comprising at least the steps of: providing a substrate in which a memory region and a peripheral region are defined, the memory region includes a plurality of memory cells, each memory cell includes at least a first transistor and a capacitor, the peripheral region compress a second transistor, a first insulating layer is formed within the memory region and the peripheral region by an atomic layer deposition process, covering the capacitor of the memory cells in the memory region and the second transistor in the peripheral region, and a second insulating layer is formed, overlying the first insulating layer and the peripheral region. Finally, a contact structure is formed within the second insulating layer, and electrically connecting the second transistor.Type: GrantFiled: January 2, 2018Date of Patent: April 16, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Mei-Ling Chen, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Ching-Hsiang Chang, Tzu-Chin Wu, Shih-Fang Tzou
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Publication number: 20190109139Abstract: A method of fabricating a DRAM includes providing a substrate. Later, a first mask layer is formed to cover the substrate. The first mask layer includes a hydrogen-containing silicon nitride layer and a silicon oxide layer. The hydrogen-containing silicon nitride layer has the chemical formula: SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1. After that, the first mask layer is patterned to form a first patterned mask layer. Next, the substrate is etched by taking the first patterned mask layer as a mask to form a word line trench. Subsequently, the first patterned mask layer is removed entirely. Finally, a word line is formed in the word line trench.Type: ApplicationFiled: August 2, 2018Publication date: April 11, 2019Inventors: Tzu-Chin Wu, Chao-An Liu, Ching-Hsiang Chang, Yi-Wei Chen
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Patent number: 10249706Abstract: The present invention provides a semiconductor structure comprising a substrate, a cell region defined on the substrate, a plurality of lower electrodes of the capacitor structures located in the cell region, an top support structure, contacting a top region of the lower electrode structure, and at least one middle support structure located between the substrate and the top support structure, contacting a middle region of the lower electrode structure, wherein when viewed in a top view, the top support structure and the middle support structure do not completely overlapped with each other.Type: GrantFiled: April 12, 2018Date of Patent: April 2, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Chia-Lung Chang, Wei-Hsin Liu, Po-Chun Chen, Yi-Wei Chen, Han-Yung Tsai, Tzu-Chin Wu, Shih-Fang Tzou
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Publication number: 20180308923Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.Type: ApplicationFiled: March 21, 2018Publication date: October 25, 2018Inventors: Tzu-Chin Wu, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Po-Chun Chen, Li-Wei Feng, Ying-Chiao Wang, Wen-Chieh Lu, Chien-Ting Ho, Tsung-Ying Tsai, Kai-Ping Chen
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Publication number: 20180190662Abstract: A method of forming a bit line gate structure of a dynamic random access memory (DRAM) includes the following. A hard mask layer is formed on a metal stack by a chemical vapor deposition process importing nitrogen (N2) gases and then importing amonia (NH3) gases. The present invention also provides a bit line gate structure of a dynamic random access memory (DRAM) including a metal stack and a hard mask. The metal stack includes a polysilicon layer, a titanium layer, a titanium nitride layer, a first tungsten nitride layer, a tungsten layer and a second tungsten nitride layer stacked from bottom to top. The hard mask is disposed on the metal stack.Type: ApplicationFiled: December 27, 2017Publication date: July 5, 2018Inventors: Tzu-Chin Wu, Wei-Hsin Liu, Yi-Wei Chen, Mei-Ling Chen, Chia-Lung Chang, Ching-Hsiang Chang, Jui-Min Lee, Tsun-Min Cheng, Lin-Chen Lu, Shih-Fang Tzou, Kai-Jiun Chang, Chih-Chieh Tsai, Tzu-Chieh Chen, Chia-Chen Wu
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Publication number: 20180190658Abstract: The present invention provides a method for fabricating a semiconductor device, comprising at least the steps of: providing a substrate in which a memory region and a peripheral region are defined, the memory region includes a plurality of memory cells, each memory cell includes at least a first transistor and a capacitor, the peripheral region compress a second transistor, a first insulating layer is formed within the memory region and the peripheral region by an atomic layer deposition process, covering the capacitor of the memory cells in the memory region and the second transistor in the peripheral region, and a second insulating layer is formed, overlying the first insulating layer and the peripheral region. Finally, a contact structure is formed within the second insulating layer, and electrically connecting the second transistor.Type: ApplicationFiled: January 2, 2018Publication date: July 5, 2018Inventors: Mei-Ling Chen, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Ching-Hsiang Chang, Tzu-Chin Wu, Shih-Fang Tzou