Abstract: In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing, and a carrier wafer is on the wafer chuck. A structure that is used for deposition processes is arranged at a top of the housing. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of the structure used for deposition processes within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed.

Abstract: In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing and a carrier wafer is on the wafer chuck. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of an object of interest within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed.

Abstract: The present disclosure is directed to resistive random access memory (RRAM) structures with a bottom electrode barrier stack. For example, the RRAM structure includes: (i) a bottom electrode having a conductive material and a layer stack, where the layer stack covers a bottom surface and a side surface of the conductive material and is interposed between the conductive material and an underlying conductive structure; (ii) a resistance-switching layer that is disposed on the bottom electrode and opposite to the conductive structure; and (iii) a top electrode that is disposed on the resistance-switching layer.

Abstract: The present disclosure is directed to resistive random access memory (RRAM) structures with a bottom electrode barrier stack. For example, the RRAM structure includes: (i) a bottom electrode having a conductive material and a layer stack, where the layer stack covers a bottom surface and a side surface of the conductive material and is interposed between the conductive material and an underlying conductive structure; (ii) a resistance-switching layer that is disposed on the bottom electrode and opposite to the conductive structure; and (iii) a top electrode that is disposed on the resistance-switching layer.