Abstract: A light-emitting diode (LED) device is disclosed. The LED device includes a semiconductor substrate with a light-emitting diode chip disposed thereon. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the light-emitting diode chip. In one embodiment, the lens module comprises a glass substrate having a first cavity formed at a first surface thereof, a fluorescent layer formed over a portion of a first surface exposed by the first cavity, facing the light-emitting diode chip, and a molded lens formed over a second surface of the glass carrier opposing to the first surface.

Abstract: A package module for an image sensor device is disclosed. The package module comprises a device chip disposed between lower and upper substrates. A first conductive layer is over a first sidewall of the lower substrate and insulated from the device chip. A first protective layer is on the first conductive layer and exposes a portion of the first conductive layer over the first sidewall of the lower substrate. A first pad is on the bottom surface of the lower substrate and is electrically connected to the first conductive layer. The invention also discloses an electronic assembly for an image sensor device and a fabrication method thereof.

Abstract: A semiconductor device is disclosed. The semiconductor device comprises a light-emitting diode chip disposed in a cavity of a semiconductor substrate. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the cavity, in which the lens module comprises a molded lens and a transparent conductive layer coated with a fluorescent material under the molded lens. A method for fabricating the semiconductor devices is also disclosed.

Abstract: A semiconductor device is disclosed. The semiconductor device comprises a light-emitting diode chip disposed in a cavity of a semiconductor substrate. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the cavity, in which the lens module comprises a molded lens and a molded fluorescent layer thereunder and the molded fluorescent layer faces the light-emitting diode chip. A method for fabricating the semiconductor devices is also disclosed.

Abstract: Electronic device packages with electromagnetic compatibility (EMC) coating thereon are presented. An electronic device package includes a chip scale package having a CMOS image sensor (CIS) array chip and a set of lenses configured with an aperture. An encapsulation is molded overlying the chip scale package. A shield is atop the encapsulation. A frame fixes the set of lenses to the encapsulation. An electromagnetic compatibility (EMC) coating is formed on the encapsulation to prevent electromagnetic interference.

Abstract: A semiconductor device and a fabrication method thereof are provides. The semiconductor device comprises a semiconductor substrate having a cavity and a light-emitting diode chip disposed in the cavity. The cavity is filled with an encapsulating resin to cover the light-emitting diode chip. Two isolated metal lines are disposed on the encapsulating resin and electrically connected to the light-emitting diode chip. At least two isolated inner wiring layers are disposed in the cavity and electrically connected to the isolated metal lines. At least two isolated outer wiring layers are disposed on a bottom surface of the semiconductor substrate and electrically connected to the isolated inner wiring layers.

Abstract: The invention provides an image sensor package and method for fabricating the same. The image sensor package comprises a first substrate comprising a sensor device thereon and a hole therein. A bonding pad comprising a first opening is formed on an upper surface of the first substrate. A second substrate comprising a spacer element with a second opening therein is disposed on the first substrate. A conductive plug is formed in the hole and passes through the first and second openings to the second substrate to electrically contact with the bonding pad. A conductive layer is formed on a lower surface of the first substrate and electrically connects to the conductive plug. A solder ball is formed on the conductive layer and electrically connects to the bonding pad by the conductive plug. The image sensor package further comprises a second substrate bonding to the first substrate. The image sensor package is relatively less thick, thus, the dimensions thereof are relatively reduced.

Abstract: A wafer level image module includes a photo sensor for outputting an electrical signal upon receiving light, a lens set for focusing incident light onto the photo sensor, and an adjustment member disposed between the photo sensor and the lens set for controlling the distance between the photo sensor and the lens set to compensate the focus offset of the photo sensor for enabling the lens set to accurately focus the incident light onto the photo sensor in an in-focus manner so as to provide a high image quality.

Abstract: Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.

Abstract: The invention provides an image sensor package and method for fabricating the same. The image sensor package comprises a first substrate comprising a sensor device thereon and a hole therein. A bonding pad comprising a first opening is formed on an upper surface of the first substrate. A second substrate comprising a spacer element with a second opening therein is disposed on the first substrate. A conductive plug is formed in the hole and passes through the first and second openings to the second substrate to electrically contact with the bonding pad. A conductive layer is formed on a lower surface of the first substrate and electrically connects to the conductive plug. A solder ball is formed on the conductive layer and electrically connects to the bonding pad by the conductive plug. The image sensor package further comprises a second substrate bonding to the first substrate. The image sensor package is relatively less thick, thus, the dimensions thereof are relatively reduced.

Abstract: A wafer level image module includes a photo sensor for outputting an electrical signal upon receiving light, a lens set for focusing incident light onto the photo sensor, and an adjustment member disposed between the photo sensor and the lens set for controlling the distance between the photo sensor and the lens set to compensate the focus offset of the photo sensor for enabling the lens set to accurately focus the incident light onto the photo sensor in an in-focus manner so as to provide a high image quality.

Abstract: Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.

Abstract: Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device comprises a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.

Abstract: A method for forming a light-transmitting region comprises providing a support feature. A sacrificial layer is formed over a portion of the support feature, wherein the sacrificial layer comprises an energy-induced swelling material. A light-blocking layer is conformably formed over the support feature to cover the sacrificial layer and the support feature. The support feature, the sacrificial layer, and the light-blocking layer are subjected to an energy source to swell the sacrificial layer until bursting to thereby delaminate a portion of the light-blocking layer from the support feature and leave a light-transmitting region exposed with a portion of the support feature in the light-blocking layer. A gas flow or scrub cleaning force is provided to clean up the light-transmitting region and a top surface of the light-blocking layer remains over the support feature.

Abstract: An electronic assembly for an image sensor device is disclosed. The electronic assembly comprises a package module and a lens set mounted thereon. The package module comprises a device substrate comprising at least one grounding plug therein, in which the grounding plug is insulated from the device substrate and an array of optoelectronic devices therein. A transparent substrate comprises a dam portion attached to the device substrate to form a cavity between the device and transparent substrates. A micro-lens array is disposed within the cavity. A conductive layer is electrically connected to the grounding plug and covers the sidewalls of the lens set and the package module and the upper surface of the lens set. A method for fabricating the electronic assembly is also disclosed.

Abstract: Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device includes a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.

Abstract: An image sensor package and method for fabricating the same is provided. The image sensor package includes a first substrate comprising a via hole therein, a driving circuit and a first conductive pad thereon. A second substrate comprising a photosensitive device and a second conductive pad thereon is bonded to the first substrate, so that the driving circuit, formed on the first substrate, can electrically connect to and further control the photosensitive device, formed on the second substrate. A solder ball is formed on a backside of the first substrate and electrically connects to the via hole for transmitting a signal from the driving circuit. Because the photosensitive device and the driving circuit are fabricated individually on the different substrates, fabrication and design thereof is more flexible. Moreover, the image sensor package is relatively less thick, thus, the dimensions thereof are reduced.

Abstract: The invention provides an image sensor package and method for fabricating the same. The image sensor package comprises a first substrate comprising a sensor device thereon and a hole therein. A bonding pad comprising a first opening is formed on an upper surface of the first substrate. A second substrate comprising a spacer element with a second opening therein is disposed on the first substrate. A conductive plug is formed in the hole and passes through the first and second openings to the second substrate to electrically contact with the bonding pad. A conductive layer is formed on a lower surface of the first substrate and electrically connects to the conductive plug. A solder ball is formed on the conductive layer and electrically connects to the bonding pad by the conductive plug. The image sensor package further comprises a second substrate bonding to the first substrate. The image sensor package is relatively less thick, thus, the dimensions thereof are relatively reduced.

Abstract: An optoelectronic device chip, and a method for making the chip, are disclosed. The chip comprises a device substrate, an optically transparent upper substrate, and a composite spacer layer which includes an adhesive material and a plurality of particles dispersed in said adhesive material. The distance between the device substrate and the upper substrate is controlled by the thickness of the composite spacer layer so that the variation is within the depth of focus of optical system.

Abstract: Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device comprises a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.