Abstract: An ESD protection circuit includes at least a first and a second silicon controlled rectifier (SCR) circuits. The first SCR circuit is coupled between the pad and the positive power supply terminal. The second SCR circuit is coupled between the pad and the ground terminal. At least one of the SCR circuits is configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.

Abstract: An ESD protection circuit includes a pad of an IC, circuitry coupled to the pad for buffering data, an RC power clamp on the IC, and first and second silicon controlled rectifier (SCR) circuits. The RC power clamp is coupled between a positive power supply terminal and a ground terminal. The first SCR circuit is coupled between the pad and the positive power supply terminal. The first SCR circuit has a first trigger input coupled to the RC power clamp circuit. The second SCR circuit is coupled between the pad and the ground terminal. The second SCR circuit has a second trigger input coupled to the RC power clamp circuit. At least one of the SCR circuits includes a gated diode configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.

Abstract: Methods and apparatus for ESD structures. A semiconductor device includes a first active area containing an ESD cell coupled to a first terminal and disposed in a well; a second active area in the semiconductor substrate, the second active area comprising a first diffusion of the first conductivity type for making a bulk contact to the well; and a third active area in the semiconductor substrate, separated from the first and second active areas by another isolation region, a portion of the third active area comprising an implant diffusion of the first conductivity type within a first diffusion of the second conductivity type and adjacent a boundary with the well of the first conductivity type; wherein the third active area comprises a diode coupled to the terminal and reverse biased with respect to the well of the first conductivity type.

Abstract: An electrostatic discharge protection circuit includes a first LC resonator circuit coupled to an input node and disposed in parallel with an internal circuit that is also coupled to the input node, and a second LC resonator circuit coupled in series with the first LC resonator circuit at a first node. The first LC resonator circuit is configured to resonate at a different frequency than a frequency the second LC resonator circuit is configured to resonate.

Abstract: A chip includes a first circuit, a second circuit, a first interconnect, and a least one protection circuit. The first circuit has a first node, a first operational voltage node, and a first reference voltage node. The second circuit has a second node, a second operational voltage node, and a second reference voltage node. The first interconnect is configured to electrically connect the first node and the second node to form a 2.5D or a 3D integrated circuit. The at least one protection circuit is located at one or various locations of the chip.

Abstract: The present disclosure provides a three dimensional integrated circuit having a plurality of dies. Each die includes a trigger line common to the other dies, the trigger line controlling the power of a power clamp in each respective die, a dedicated electrostatic discharge (ESD) line for each respective die, and an ESD detection circuit connected to the dedicated ESD line and to a first power line common to the other dies. When an input signal is received by the ESD detection circuit of one of the plural dies, the ESD detection circuit generates an output signal to the common trigger line to supply power to the power clamp in each of the plural dies to clamp ESD voltage or current to the common first power line or a second power line.

Abstract: Fast turn on silicon controlled rectifiers for ESD protection. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of a second conductivity type; a second well of the second conductivity type; a first diffused region of the first conductivity type and coupled to a first terminal; a first diffused region of the second conductivity type; a second diffused region of the first conductivity type; a second diffused region of the second conductivity type in the second well; wherein the first diffused region of the first conductivity type and the first diffused region of the second conductivity type form a first diode, and the second diffused region of the first conductivity type and the second diffused region of the second conductivity type form a second diode, and the first and second diodes are series coupled between the first terminal and the second terminal.

Abstract: Fast turn on silicon controlled rectifiers for ESD protection. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of a second conductivity type; a second well of the second conductivity type; a first diffused region of the first conductivity type and coupled to a first terminal; a first diffused region of the second conductivity type; a second diffused region of the first conductivity type; a second diffused region of the second conductivity type in the second well; wherein the first diffused region of the first conductivity type and the first diffused region of the second conductivity type form a first diode, and the second diffused region of the first conductivity type and the second diffused region of the second conductivity type form a second diode, and the first and second diodes are series coupled between the first terminal and the second terminal.

Abstract: Methods and apparatus for increased holding voltage SCRs. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of the first conductivity type; a second well of a second conductivity type adjacent to the first well, an intersection of the first well and the second well forming a p-n junction; a first diffused region of the first conductivity type formed at the first well and coupled to a ground terminal; a first diffused region of the second conductivity type formed at the first well; a second diffused region of the first conductivity type formed at the second well and coupled to a pad terminal; a second diffused region of the second conductivity type formed in the second well; and a Schottky junction formed adjacent to the first diffused region of the second conductivity type coupled to a ground terminal. Methods for forming devices are disclosed.

Abstract: A chip includes a first circuit, a second circuit, a first interconnect, and a least one protection circuit. The first circuit has a first node, a first operational voltage node, and a first reference voltage node. The second circuit has a second node, a second operational voltage node, and a second reference voltage node. The first interconnect is configured to electrically connect the first node and the second node to form a 2.5D or a 3D integrated circuit. The at least one protection circuit is located at one or various locations of the chip.

Abstract: Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit that is electrically connected to first and second circuit nodes from an ESD event. The ESD protection device includes a first electrical path extending between the first and second circuit nodes and including first and second ESD detection elements arranged thereon. The ESD protection device also includes first and second voltage bias elements having respective inputs electrically connected to respective outputs of the first and second ESD detection elements. A second electrical path extends between the first and second circuit nodes and is in parallel with the first electrical path. The second electrical path includes a voltage controlled shunt network having at least two control terminals electrically connected to respective outputs of the first and second voltage bias elements. Other embodiments are also disclosed.

Abstract: An ESD protection circuit includes a pad of an IC, circuitry coupled to the pad for buffering data, an RC power clamp on the IC, and first and second silicon controlled rectifier (SCR) circuits. The RC power clamp is coupled between a positive power supply terminal and a ground terminal. The first SCR circuit is coupled between the pad and the positive power supply terminal. The first SCR circuit has a first trigger input coupled to the RC power clamp circuit. The second SCR circuit is coupled between the pad and the ground terminal. The second SCR circuit has a second trigger input coupled to the RC power clamp circuit. At least one of the SCR circuits includes a gated diode configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.

Abstract: The present invention is to provide a method of creating a PIN silicon thin film comprising the steps of providing a molten P-type, Intrinsic and N-type semiconductor material. Next, it is performing a down draw process or a casting process of the molten P-type. Intrinsic and N-type semiconductor material. Then, it is selectively performing a dual-side rolling process to create a P-type, Intrinsic and N-type semiconductor ribbon. Subsequently, it is performing a step of joining the P-type, Intrinsic and N-type semiconductor ribbon to form a PIN semiconductor ribbon. Finally, it is performing a roll press process or a pressing process to the PIN semiconductor ribbon to create the PIN semiconductor thin film.

Abstract: A method for fabricating a thin film transistor is described. The method includes: providing a substrate; forming a sacrificial layer on the substrate; forming a polysilicon pattern layer on the substrate to surround the sacrificial layer; forming a gate insulation layer to cover at least the polysilicon pattern layer; forming a gate pattern on the gate insulation layer above the polysilicon pattern layer; forming a source region, a drain region, and an active region in the polysilicon pattern layer, wherein the active region is between the source region and the drain region; forming a passivation layer to cover the gate pattern and a portion of the gate insulation layer; forming a source conductive layer and a drain conductive layer on the passivation layer, wherein the source conductive layer and the drain conductive layer are electrically connected to the source region and the drain region of the polysilicon pattern layer respectively.