Abstract: A method that reorders partitioning candidates or motion vectors based on template matching costs for geometric prediction mode (GPM) is provided. A video coder receives data to be encoded or decoded as a current block of a current picture of a video. The current block is partitioned into first and second partitions by a bisecting line defined by an angle-distance pair. The video coder identifies a list of candidate prediction modes for coding the first and second partitions. The video coder computes a template matching (TM) cost for each candidate prediction mode in the list. The video coder receives or signals a selection of a candidate prediction mode based on an index that is assigned to the selected candidate prediction mode based on the computed TM costs. The video coder reconstructs the current block by using the selected candidate prediction mode to predict the first and second partitions.

Abstract: An example compute cabinet assembly includes an equipment room configured to implement electrical components therein, an air inlet channel coupled to a first side of the equipment room, and a cabinet fan module coupled to a second side of the equipment room opposite the first side. A first air outlet channel is coupled to the cabinet fan module and extends along a third side of the equipment room towards a first outlet of the first air outlet channel. Moreover, electric fans are positioned in the cabinet fan module, the electric fans being configured to create an airflow path originating at an inlet of the air inlet channel. The airflow path further extends through the equipment room and cabinet fan module. A guide plate is also positioned adjacent to an inlet of the equipment room, the guide plate being configured to uniformly distribute the airflow path through the equipment room.

Abstract: A method of screening new psychoactive substance is provided, including providing a sample; placing the sample on chromatographic paper; ionizing the sample on the chromatographic paper by a direct analysis in real time (DART); performing a mass spectrometry analysis on the ionized sample to obtain a sample mass spectrum; and comparing a known standard mass spectrum with the sample mass spectrum, in which when a profile of the known standard mass spectrum is the same as a profile of the sample mass spectrum and the known standard mass spectrum is not exactly the same as the sample mass spectrum, the sample is determined to be the new psychoactive substance. A platform for screening new psychoactive substance is also provided to quickly screen out the new psychoactive substance.

Abstract: A memory circuit includes a substrate with a front side and a back side opposite the front side. An interconnect structure is situated on or over the substrate and has first and second metal layers and a via electrically connecting the first and second metal layers. A word line driver circuit is configured to output a word line enable signal to a word line of a memory array. The word line driver circuit has an inverter circuit configured to receive a word line signal, and an enable transistor electrically connected to an output of the inverter circuit by a metal line that includes the first metal layer, the second metal layer, and the via.

Abstract: A hydrocarbon resin polymer including a repeating unit (A) is derived from dicyclopentadiene (DCPD). The hydrocarbon resin polymer has a fluorine substituent, and the content of the fluorine substituent is 100 to 4500 ppm based on the total weight of the hydrocarbon resin polymer. A manufacturing method of the above hydrocarbon resin polymer. The manufacturing method includes polymerizing a mixture in the presence of a fluorine-containing compound, wherein the fluorine-containing compound is a boron trifluoride complex and the mixture includes a dicyclopentadiene. A substrate structure includes a resin layer, and a conductive layer disposed on the resin layer. The resin layer is formed from a resin composition including the above hydrocarbon resin polymer using a cross-linking process.

Abstract: A memory device for CIM, applicable to a 3D AND-type flash memory, includes a memory array, input word line pairs, and a signal processing circuit. The memory array includes first and second pairs of memory cells. Each first pair of memory cells includes a first memory cell set coupled to a first GBL and a second memory cell set coupled to a second GBL. Each second pair of memory cells includes a third memory cell set coupled to the first GBL and a fourth memory cell set coupled to the second GBL. Each input word line pair includes a first input word line coupled to the first and the second memory cell sets, and a second input word line coupled to the third and the fourth memory cell sets s. The signal processing circuit is coupled to the first and second global bit lines.

Abstract: Video encoding or decoding methods and apparatuses include receiving input data associated with a current block in a current picture, determining a preload region in a reference picture shared by two or more coding configurations of affine prediction or motion compensation or by two or more affine refinement iterations, loading reference samples in the preload region, generating predictors for the current block, and encoding or decoding the current block according to the predictors. The predictors associated with the affine refinement iterations or coding configurations are generated based on some of the reference samples in the preload region.

Abstract: A resin composition includes 100 parts by weight of hydrocarbon resin polymers and 0.01 to 50 parts by weight of divinyl aromatic compound. A substrate structure includes a resin layer and a conductive layer disposed on the resin layer, wherein the resin layer is formed from the resin composition. A manufacturing method of the resin composition includes the following steps: providing a mixture, wherein the mixture includes a monovinyl aromatic compound and a divinyl aromatic compound, and optionally includes a bridged ring compound; polymerizing the mixture to form a crude composition; and purifying the crude composition to prepare the resin composition.

Abstract: A method for fabricating a package structure is provided. The method includes premixing cellulose nanofibrils (CNFs) and a graphene material in a solvent to form a solution; removing the solvent from the solution to form a composite filler; mixing a prepolymeric material with the composite filler to form a composite material; and performing a molding process using the composite material.

Abstract: A semiconductor device with a barrier layer between a gate structure and gate spacer layers, and a method of fabricating the same are disclosed. The a method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, performing a nitridation operation to form a barrier layer on the polysilicon structure and the fin structure, forming gate spacer layers on the barrier layer, forming a source/drain region in the fin structure and adjacent to the barrier layer, annealing the gate spacer layers, and replacing the polysilicon structure with a gate structure.

Abstract: A memory device, such as a 3D AND flash memory, includes a memory cell block, a word line driver, and a plurality of bit line switches. The word line driver has a plurality of complementary transistor pairs for respectively generating a plurality of word line signals for a plurality of word lines. Substrates of a first transistor and a second transistor of each of the complementary transistor pairs respectively receive a first voltage and a second voltage. Each of the bit line switches includes a third transistor. A substrate of the third transistor receives a third voltage. The first voltage, the second voltage, and the third voltage are constant static voltages during a soft program operation and a soft program verify operation.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor device including a shallow trench isolation (STI) structure disposed between a first side and a second side of the semiconductor substrate. An intermetal dielectric structure comprising a first metal interconnect is on the second side. A first etching process is performed to form a first trench extending from the first side of the semiconductor substrate to the STI structure. An etch stop layer is deposited on the first side. A dielectric material is deposited into the first trench to form a dielectric spacer. A second trench is etched during a second etching process. The second trench is aligned with the first trench and extends through the STI structure to the first metal interconnect. A conductive material is deposited into the second trench to form a contact pad that contacts the first metal interconnect.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

Abstract: An example compute cabinet assembly includes an equipment room, an air inlet channel coupled to the equipment room, and a cabinet fan module coupled to the equipment room. The compute cabinet assembly further includes first and second air outlet channels. The first air outlet channel extends along a side of the equipment room towards an outlet of the first air outlet channel. The second air outlet channel extends along another side of the equipment room towards an outlet of the second air outlet channel. The compute cabinet assembly also includes electric fans positioned in the cabinet fan module. The electric fans are configured to create airflow originating at an inlet of the air inlet channel, extending through the equipment room and cabinet fan module, and exiting the compute cabinet assembly at the outlets of the first and second air outlet channels.

Abstract: An example assembly includes an equipment room, a cabinet fan module having fans, and a processor configured to execute logic. Temperature sensors are positioned in the air inlet channel and the equipment room. An electrical component having an air inlet area is also positioned in the equipment room. The logic causes the fans to operate at a predetermined speed, and compare a temperature in the air inlet channel with a temperature at the air inlet area. In response to determining that the temperature at the air inlet area is greater than the temperature in the air inlet channel plus a constant value, the operating speed of the fans is increased. Moreover, the operating speed of the fans is decreased in response to determining that the ambient temperature in the air inlet channel plus a constant value is greater than or equal to the temperature at the air inlet area.

Abstract: An example compute cabinet assembly includes an equipment room configured to implement electrical components therein, an air inlet channel coupled to a first side of the equipment room, and a cabinet fan module coupled to a second side of the equipment room opposite the first side. A first air outlet channel is coupled to the cabinet fan module and extends along a third side of the equipment room towards a first outlet of the first air outlet channel. Moreover, electric fans are positioned in the cabinet fan module, the electric fans being configured to create an airflow path originating at an inlet of the air inlet channel. The airflow path further extends through the equipment room and cabinet fan module. A guide plate is also positioned adjacent to an inlet of the equipment room, the guide plate being configured to uniformly distribute the airflow path through the equipment room.

Abstract: A device includes a semiconductor substrate, a gate dielectric over the semiconductor substrate, and a gate electrode over the gate dielectric. The gate electrode has a first portion having a first thickness, and a second portion having a second thickness smaller than the first thickness. The device further includes a source/drain region on a side of the gate electrode with the source/drain region extending into the semiconductor substrate, and a device isolation region. The device isolation region has a part having a sidewall contacting a second sidewall of the source/drain region to form an interface. The interface is overlapped by a joining line of the firs portion and the second portion of the gate electrode.

Abstract: A memory device, such as a 3D AND flash memory, includes a memory cell block, a word line driver, and a plurality of bit line switches. The word line driver has a plurality of complementary transistor pairs for respectively generating a plurality of word line signals for a plurality of word lines. Substrates of a first transistor and a second transistor of each of the complementary transistor pairs respectively receive a first voltage and a second voltage. Each of the bit line switches includes a third transistor. A substrate of the third transistor receives a third voltage. The first voltage, the second voltage, and the third voltage are constant static voltages during a soft program operation and a soft program verify operation.

Abstract: Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.