Abstract: A solar cell device and a method of fabricating the same is described. The solar cell includes a back contact, an absorber over the back contact, and a front contact over the absorber. The back contact includes a back electrode layer and a graphene layer.

Abstract: A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacers. The absorber layer is partially in contact with the spacers and partially in direct contact with the back contact layer. The solar cell substrate is heated to form voids between the absorber layer and the back contact layer at the locations of the spacers.

Abstract: A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.

Abstract: A photovoltaic system includes a photovoltaic module having an upper surface. A fluid deposition unit is positioned to deposit a layer of a fluid on the upper surface of the photovoltaic module. A fluid collection unit is positioned to collect fluid deposited on the upper surface of the photovoltaic module. A fluid reservoir is connected to receive fluid from the fluid collection unit. A pump is connected to supply fluid from the fluid reservoir to the fluid deposition unit.

Abstract: A solar cell comprises a back contact layer, an absorber layer on the back contact layer, a buffer layer on the absorber layer, and a front contact layer above the buffer layer. The front contact layer has a first portion and a second portion. The first and second portions of the front contact layer differ from each other in thickness or dopant concentration.

Abstract: A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination.

Abstract: A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell.

Abstract: A thin film solar cell structure and the fabricating method thereof are disclosed. A passivation layer is embedded into the thin film solar cell structure to be in contact with an absorbing layer. The interface trap density of the absorbing layer is reduced by the surface electric field of the passivation layer. The invention helps improve the power conversion efficiency and protect the absorbing layer.

Abstract: A laser apparatus is provided. The laser apparatus includes at least one semiconductor layer having a first surface and a second surface and an insulator layer formed on the first surface of the at least one semiconductor layer, wherein the at least one semiconductor layer and the insulator form a laser cavity.