Patents by Inventor Tzu-Yang Lin

Tzu-Yang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220140188
    Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.
    Type: Application
    Filed: October 29, 2020
    Publication date: May 5, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yen-Chun TSENG, Tzu-Yang LIN, Jyun-De WU, Fei-Hong CHEN, Yi-Chun SHIH
  • Publication number: 20220131046
    Abstract: A micro semiconductor device, including a semiconductor structure, a current confinement layer, a first type electrode, and a second type electrode, is provided. The current confinement layer is disposed in the semiconductor structure. The current confinement layer includes an oxidized area and a non-oxidized area. The first type electrode and the second type electrode are both disposed on the current confinement layer. An orthographic projection of a part of the oxidized area on a bottom surface of the semiconductor structure away from the first type electrode and the second type electrode is located between an orthographic projection of the first type electrode on the bottom surface and an orthographic projection of the second type electrode on the bottom surface.
    Type: Application
    Filed: December 16, 2020
    Publication date: April 28, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yen-Chun Tseng, Tzu-Yang Lin, Jyun-De Wu, Yi-Chun Shih
  • Publication number: 20220131032
    Abstract: A micro light-emitting device, including a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, and a light reflection layer, is provided. The light-emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the light-emitting layer. The first type electrode and the second type electrode are both arranged on the second type semiconductor layer. The light reflection layer is arranged between the light-emitting layer and the first type electrode. The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area. An orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 28, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yen-Chun Tseng, Tzu-Yang Lin, Jyun-De Wu, Yi-Chun Shih
  • Patent number: 11302547
    Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: April 12, 2022
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Huan-Pu Chang, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11257860
    Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: February 22, 2022
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11211535
    Abstract: A method for fabricating a micro light-emitting diode display is provided. The method includes disposing a plurality of micro light-emitting diodes on a carrier; transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate; subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate; subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and, subjecting the micro light-emitting diodes to the main bonding process after the first detection process.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: December 28, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Yi-Ching Chen, Pei-Hsin Chen, Yi-Chun Shih, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11183622
    Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: November 23, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Pei-Hsin Chen, Yi-Chun Shih
  • Patent number: 11177154
    Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: November 16, 2021
    Assignee: PixeLED Display CO., LTD.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Huan-Pu Chang, Chih-Ling Wu, Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20210327858
    Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Sheng-Yuan Sun, Ying-Tsang Liu, Yi-Ching Chen, Pei-Hsin Chen, Yi-Chun Shih, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20210320090
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Applicant: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11143963
    Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: October 12, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yu Liu, Wei-Han Lai, Tzu-Yang Lin, Ming-Hui Weng, Ching-Yu Chang, Chin-Hsiang Lin
  • Publication number: 20210311388
    Abstract: Manufacturing semiconductor device includes forming photoresist layer. Photoresist layer is selectively exposed to actinic radiation and developed to form pattern. Photoresist composition includes: iodine-containing sensitizer, photoactive compound, polymer.
    Type: Application
    Filed: February 5, 2021
    Publication date: October 7, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Han LAI, Li-Po YANG, Shang-Wern CHANG, Ching-Yu CHANG, Tzu-Yang LIN, Chin-Hsiang LIN
  • Publication number: 20210313220
    Abstract: A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developing the exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.
    Type: Application
    Filed: June 14, 2021
    Publication date: October 7, 2021
    Inventors: Tzu-Yang LIN, Cheng-Han WU, Ching-Yu CHANG, Chin-Hsiang LIN
  • Publication number: 20210311393
    Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.
    Type: Application
    Filed: January 15, 2021
    Publication date: October 7, 2021
    Inventors: Tzu-Yang LIN, Ching-Yu CHANG, Chin-Hsiang LIN
  • Patent number: 11127341
    Abstract: A light emitting module including a circuit carrier and a plurality of light emitting devices is provided. The circuit carrier includes a first circuit layer, a second circuit layer, a dielectric layer and a plurality of conductive vias. The first circuit layer and the second circuit layer are located at two opposite sides of the dielectric layer. The conductive vias pass through the dielectric layer and two opposite end portions of each of the conductive vias are respectively connected to the first circuit layer and the second circuit layer. The light emitting devices are electrically bonded to the first circuit layer. Moreover, the light emitting devices are disposed in a device disposing area of the circuit carrier and the conductive vias are arranged outside the device disposing area. A display device is also provided.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: September 21, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Po-Jen Su, Hsuan-Wei Mai
  • Publication number: 20210265524
    Abstract: A micro LED display device includes a display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes a first micro light-emitting element arranged in a straight line along a first direction. The pixel area of the second transfer area includes a second micro light-emitting element arranged in another straight line along the first direction. In the first direction, the first micro light-emitting element and the second micro light-emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.
    Type: Application
    Filed: December 3, 2020
    Publication date: August 26, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Hung Lai, Yun-Li Li, Tzu-Yang Lin
  • Patent number: 11094675
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: August 17, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11094677
    Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: August 17, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Sheng-Yuan Sun, Ying-Tsang Liu, Yi-Ching Chen, Pei-Hsin Chen, Yi-Chun Shih, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11056614
    Abstract: A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, a side surface and a second surface opposite to the first surface. The side surface of the epitaxial structure connects to an outer edge of the first surface and an outer edge of the second surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacts the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on and surrounds the side surface, and electrically connected to the second type doped semiconductor layer, and directly contacts the second type doped semiconductor layer on a portion of the side surface.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: July 6, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Patent number: 11056375
    Abstract: A micro LED carrier board is provided. The micro LED carrier board includes a substrate structure having a first surface and a second surface and having a central region and a peripheral region on the outside of the central region. The micro LED carrier board includes a plurality of micro LED elements forming an array and on the second surface of the substrate structure. The micro LED carrier board includes a patterned structure formed on the first surface and the second surface. The patterned structure has a first pattern density in the central region and a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: July 6, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Pei-Hsin Chen, Yi-Ching Chen, Yu-Chu Li, Yi-Chun Shih, Ying-Tsang Liu, Yu-Hung Lai, Tzu-Yang Lin