Patents by Inventor Tzu-Yang Lin

Tzu-Yang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10998475
    Abstract: A micro semiconductor chip, a micro semiconductor structure, and a display device are provided. The micro semiconductor chip includes an epitaxial layer, a first electrode, a second electrode and a side light guide element. The epitaxial layer has a top surface, a bottom surface and a side surface. The first electrode and the second electrode are disposed on the bottom surface of the epitaxial layer. The side light guide element disposed on the side surface has a connecting portion and an extending portion. The connecting portion is in contact with a part of the extending portion, and the extending portion extends away from the side surface of the epitaxial layer. The extending portion has a top surface and a bottom surface, wherein a plane containing the top surface of the epitaxial layer forms an acute angle ?1 with a plane containing the top surface of the extending portion.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: May 4, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Yi-Min Su, Chih-Ling Wu, Gwo-Jiun Sheu, Sheng-Chieh Liang, Tzu-Yang Lin
  • Publication number: 20210125970
    Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.
    Type: Application
    Filed: December 17, 2019
    Publication date: April 29, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Pei-Hsin Chen, Yi-Chun Shih
  • Publication number: 20210126048
    Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.
    Type: Application
    Filed: January 7, 2021
    Publication date: April 29, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20210103218
    Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 8, 2021
    Inventors: Chen-Yu LIU, Tzu-Yang LIN, Ya-Ching CHANG, Ching-Yu CHANG, Chin-Hsiang LIN
  • Publication number: 20210083156
    Abstract: A micro semiconductor chip, a micro semiconductor structure, and a display device are provided. The micro semiconductor chip includes an epitaxial layer, a first electrode, a second electrode and a side light guide element. The epitaxial layer has a top surface, a bottom surface and a side surface. The first electrode and the second electrode are disposed on the bottom surface of the epitaxial layer. The side light guide element disposed on the side surface has a connecting portion and an extending portion. The connecting portion is in contact with a part of the extending portion, and the extending portion extends away from the side surface of the epitaxial layer. The extending portion has a top surface and a bottom surface, wherein a plane containing the top surface of the epitaxial layer forms an acute angle ?1 with a plane containing the top surface of the extending portion.
    Type: Application
    Filed: November 21, 2019
    Publication date: March 18, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yi-Min SU, Chih-Ling WU, Gwo-Jiun SHEU, Sheng-Chieh LIANG, Tzu-Yang LIN
  • Patent number: 10950485
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: March 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsai-Hao Hung, Ping-Cheng Ko, Tzu-Yang Lin, Fang-Yu Liu, Cheng-Han Wu
  • Patent number: 10937826
    Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: March 2, 2021
    Assignee: PLAYNITIRIDE DISPLAY CO., LTD.
    Inventors: Ying-Tsang Liu, Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Yu-Chu Li, Huan-Pu Chang, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 10930202
    Abstract: A display apparatus includes a driving substrate and a plurality of micro light-emitting devices (LEDs). The driving substrate has a plurality of pixel regions. The plurality micro LEDs are disposed in in each of the pixel regions and electrically connected to the driving substrate. Orthogonal projection areas of the micro LEDs in each of the pixel regions on the driving substrate are equal. At least two micro LEDs in each of the pixel regions have different effective light-emitting areas.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: February 23, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Tzu-Yang Lin, Mi-Hung Lai, Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Yu-Chu Li, Ying-Tsang Liu
  • Patent number: 10923527
    Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: February 16, 2021
    Assignee: PixeLED Display CO., LTD.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 10879306
    Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: December 29, 2020
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Chih-Ling Wu, Ying-Tsang Liu, Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Yu-Chu Li, Huan-Pu Chang, Yu-Yun Lo, Yi-Min Su, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 10879108
    Abstract: Topographic planarization methods for a lithography process are provided. The method includes providing a substrate having a topography surface. A planarization stack is formed over the topography surface of the substrate. The optical material stack includes a first optical material layer and an overlying second optical material layer, and the first optical material layer has a higher etching rate than the second optical material layer with respect to an etchant. The planarization stack is etched using the etchant to entirely remove the second optical material layer and partially remove the first optical material layer, such that the remaining first optical material layer has a substantially planar surface over the topography surface of the substrate.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Yang Lin, Ming-Hui Weng, Cheng-Han Wu, Chin-Hsiang Lin
  • Publication number: 20200403116
    Abstract: A method of fabricating a micro light emitting diode (LED) panel is provided. The method includes forming a semiconductor material substrate, forming a plurality of transistor devices, transferring and bonding the transistor devices onto a circuit substrate, and transferring a plurality of micro LED devices from a micro LED device substrate to the circuit substrate. The semiconductor material substrate includes a carrier, a release layer, an inorganic insulation layer, and a semiconductor material layer. The release layer is located between the carrier and the inorganic insulation layer. The semiconductor material layer is bonded to the release layer through the inorganic insulation layer. Electron mobility of the semiconductor material layer is greater than 20 cm2/V·s. The transistor devices are disposed on the release layer and are electrically connected to the circuit substrate. The micro LED devices are electrically connected to the transistor devices. A micro LED panel is also provided.
    Type: Application
    Filed: June 17, 2020
    Publication date: December 24, 2020
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Ying-Tsang Liu, Chih-Ling Wu
  • Publication number: 20200388736
    Abstract: A method for fabricating a micro light-emitting diode display is provided. The method includes disposing a plurality of micro light-emitting diodes on a carrier; transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate; subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate; subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and, subjecting the micro light-emitting diodes to the main bonding process after the first detection process.
    Type: Application
    Filed: December 26, 2019
    Publication date: December 10, 2020
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yi-Ching CHEN, Pei-Hsin CHEN, Yi-Chun SHIH, Tzu-Yang LIN, Yu-Hung LAI
  • Patent number: 10859915
    Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yu Liu, Tzu-Yang Lin, Ya-Ching Chang, Ching-Yu Chang, Chin-Hsiang Lin
  • Patent number: 10833220
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: November 10, 2020
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20200350466
    Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
    Type: Application
    Filed: July 21, 2020
    Publication date: November 5, 2020
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20200335386
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Application
    Filed: September 3, 2019
    Publication date: October 22, 2020
    Inventors: Tsai-Hao HUNG, Ping-Cheng KO, Tzu-Yang LIN, Fang-Yu LIU, Cheng-Han WU
  • Patent number: 10763393
    Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: September 1, 2020
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20200273737
    Abstract: A micro LED carrier board is provided. The micro LED carrier board includes a substrate structure having a first surface and a second surface and having a central region and a peripheral region on the outside of the central region. The micro LED carrier board includes a plurality of micro LED elements forming an array and on the second surface of the substrate structure. The micro LED carrier board includes a patterned structure formed on the first surface and the second surface. The patterned structure has a first pattern density in the central region and a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.
    Type: Application
    Filed: December 19, 2019
    Publication date: August 27, 2020
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Pei-Hsin CHEN, Yi-Ching CHEN, Yu-Chu LI, Yi-Chun SHIH, Ying-Tsang LIU, Yu-Hung LAI, Tzu-Yang LIN
  • Publication number: 20200259050
    Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.
    Type: Application
    Filed: April 30, 2020
    Publication date: August 13, 2020
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Chih-Ling Wu, Yen-Yeh Chen, Yi-Min Su, Yi-Chun Shih, Bo-Wei Wu, Yu-Yun Lo, Ying-Ting Lin, Tzu-Yang Lin