Patents by Inventor Tzu Yao Tseng
Tzu Yao Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10950758Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 ?m and is not greater than 10 ?m; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.Type: GrantFiled: May 19, 2020Date of Patent: March 16, 2021Assignee: Epistar CorporationInventors: Chao-Hsing Chen, Jia-Kuen Wang, Wen-Hung Chuang, Tzu-Yao Tseng, Cheng-Lin Lu
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Publication number: 20200357956Abstract: A semiconductor light-emitting device includes a substrate; a first semiconductor layer and a second semiconductor layer formed on the substrate, wherein the first semiconductor layer includes a first exposed portion and a second portion; a plurality of first trenches formed on the substrate and including a surface composed by the first exposed portion; a second trench formed on the substrate and including a surface composed by the second exposed portion at a periphery region of the semiconductor light-emitting device, wherein each of the plurality of first trenches is branched from the second trench; and a patterned metal layer formed on the second semiconductor layer and including a first metal region and a second metal region, and portions of the second metal region are formed in the plurality of first trenches and the second trench to electrically connect to the first exposed portion and the second exposed portion.Type: ApplicationFiled: July 24, 2020Publication date: November 12, 2020Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Tsung-Hsun CHIANG, Bo-Jiun HU, Wen-Hung CHUANG, Yu-Ling LIN
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Publication number: 20200295233Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.Type: ApplicationFiled: June 3, 2020Publication date: September 17, 2020Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
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Publication number: 20200279976Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 ?m and is not greater than 10 ?m; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.Type: ApplicationFiled: May 19, 2020Publication date: September 3, 2020Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Wen-Hung CHUANG, Tzu-Yao TSENG, Cheng-Lin LU
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Patent number: 10749075Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.Type: GrantFiled: July 23, 2019Date of Patent: August 18, 2020Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
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Patent number: 10680136Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 ?m and is not greater than 10 ?m; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.Type: GrantFiled: May 20, 2019Date of Patent: June 9, 2020Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Wen-Hung Chuang, Tzu-Yao Tseng, Cheng-Lin Lu
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Patent number: 10680138Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: GrantFiled: April 15, 2019Date of Patent: June 9, 2020Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
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Patent number: 10651344Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.Type: GrantFiled: January 14, 2019Date of Patent: May 12, 2020Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Wen-Hung Chuang, Cheng-Lin Lu
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Publication number: 20200111935Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.Type: ApplicationFiled: December 4, 2019Publication date: April 9, 2020Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Chien-Chih LIAO, Tzu-Yao TSENG, Tsun-Kai KO, Chien-Fu SHEN
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Publication number: 20200020829Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.Type: ApplicationFiled: September 10, 2019Publication date: January 16, 2020Inventors: Yi-Hung Lin, Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Jen-Chieh Yu, Guan-Wu Chen
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Patent number: 10529893Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.Type: GrantFiled: November 21, 2017Date of Patent: January 7, 2020Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Chien-Chih Liao, Tzu-Yao Tseng, Tsun-Kai Ko, Chien-Fu Shen
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Publication number: 20190348570Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.Type: ApplicationFiled: July 23, 2019Publication date: November 14, 2019Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Tsung-Hsun CHIANG, Bo-Jiun HU, Wen-Hung CHUANG, Yu-Ling LIN
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Patent number: 10446721Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.Type: GrantFiled: January 26, 2018Date of Patent: October 15, 2019Assignee: EPISTAR CORPORATIONInventors: Yi-Hung Lin, Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Jen-Chieh Yu, Guan-Wu Chen
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Patent number: 10411162Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.Type: GrantFiled: September 14, 2016Date of Patent: September 10, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
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Publication number: 20190273186Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 ?m and is not greater than 10 ?m; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.Type: ApplicationFiled: May 20, 2019Publication date: September 5, 2019Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Wen-Hung CHUANG, Tzu-Yao TSENG, Cheng-Lin LU
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Publication number: 20190245116Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: ApplicationFiled: April 15, 2019Publication date: August 8, 2019Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
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Patent number: 10361342Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.Type: GrantFiled: June 26, 2017Date of Patent: July 23, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Wen-Hung Chuang, Tzu-Yao Tseng, Cheng-Lin Lu, Chi-Shiang Hsu, Tsung-Hsun Chiang, Bo-Jiun Hu
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Patent number: 10340423Abstract: A light-emitting device includes a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; and a reflective layer located on the semiconductor structure and comprising an outer edge and a second area; wherein a distance between the first edge and the outer edge is between 0 ?m and 10 ?m, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer.Type: GrantFiled: January 18, 2018Date of Patent: July 2, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Wen-Hung Chuang, Tzu-Yao Tseng, Cheng-Lin Lu
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Patent number: 10297723Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: GrantFiled: April 9, 2018Date of Patent: May 21, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
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Publication number: 20190148600Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.Type: ApplicationFiled: January 14, 2019Publication date: May 16, 2019Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Wen-Hung CHUANG, Cheng-Lin LU