Patents by Inventor Tzu Yao Tseng
Tzu Yao Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10217906Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.Type: GrantFiled: January 25, 2018Date of Patent: February 26, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Wen-Hung Chuang, Cheng-Lin Lu
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Patent number: 10199544Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: GrantFiled: December 29, 2017Date of Patent: February 5, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
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Publication number: 20180233631Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: ApplicationFiled: April 9, 2018Publication date: August 16, 2018Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
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Publication number: 20180212126Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.Type: ApplicationFiled: January 26, 2018Publication date: July 26, 2018Inventors: Yi-Hung Lin, Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Jen-Chieh Yu, Guan-Wu Chen
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Publication number: 20180212110Abstract: A light-emitting device includes a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; and a reflective layer located on the semiconductor structure and comprising an outer edge and a second area; wherein a distance between the first edge and the outer edge is between 0 ?m and 10 ?m, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer.Type: ApplicationFiled: January 18, 2018Publication date: July 26, 2018Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Wen-Hung CHUANG, Tzu-Yao TSENG, Cheng-Lin LU
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Publication number: 20180212125Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.Type: ApplicationFiled: January 25, 2018Publication date: July 26, 2018Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao Tseng, Wen-Hung Chuang, Cheng-Lin LU
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Publication number: 20180145228Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: ApplicationFiled: December 29, 2017Publication date: May 24, 2018Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
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Publication number: 20180076358Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.Type: ApplicationFiled: November 21, 2017Publication date: March 15, 2018Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Chien-Chih LIAO, Tzu-Yao TSENG, Tsun-Kai KO, Chien-Fu SHEN
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Patent number: 9893241Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: GrantFiled: November 14, 2016Date of Patent: February 13, 2018Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
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Patent number: 9859467Abstract: An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.Type: GrantFiled: July 6, 2015Date of Patent: January 2, 2018Assignee: Epistar CorporationInventors: Chao-Hsing Chen, Jia-Kuen Wang, Chien-Chih Liao, Tzu-Yao Tseng, Tsun-Kai Ko, Chien-Fu Shen
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Publication number: 20170373226Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.Type: ApplicationFiled: June 26, 2017Publication date: December 28, 2017Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Wen-Hung CHUANG, Tzu-Yao TSENG, Cheng-Lin LU, Chi-Shiang HSU, Tsung-Hsun CHIANG, Bo-Jiun HU
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Publication number: 20170141260Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.Type: ApplicationFiled: November 14, 2016Publication date: May 18, 2017Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
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Publication number: 20170005232Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.Type: ApplicationFiled: September 14, 2016Publication date: January 5, 2017Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Tsung-Hsun CHIANG, Bo-Jiun HU, Wen-Hung CHUANG, Yu-Ling LIN
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Patent number: 9461209Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.Type: GrantFiled: September 14, 2015Date of Patent: October 4, 2016Assignee: EPISTAR CORPORATIONInventors: Min-Yen Tsai, Chao-Hsing Chen, Tsung-Hsun Chiang, Wen-Hung Chuang, Bo-Jiun Hu, Tzu-Yao Tseng, Jia-Kuen Wang, Kuan-Yi Lee, Yi-Ming Chen, Chun-Yu Lin, Tsung-Hsien Yang, Tzu-Chieh Hsu, Kun-De Lin, Yao-Ning Chan, Chih-Chiang Lu
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Publication number: 20160005926Abstract: An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.Type: ApplicationFiled: July 6, 2015Publication date: January 7, 2016Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Chien-Chih LIAO, Tzu-Yao TSENG, Tsun-Kai KO, Chien-Fu SHEN
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Patent number: D768094Type: GrantFiled: April 22, 2015Date of Patent: October 4, 2016Assignee: EPISTAR CORPORATIONInventors: Chao Hsing Chen, Tsung Hsun Chiang, Chien Chih Liao, Wen Hung Chuang, Min Yen Tsai, Bo Jiun Hu, Tzu Yao Tseng, Kuan Yi Lee, Jia Kuen Wang
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Patent number: D769199Type: GrantFiled: May 8, 2015Date of Patent: October 18, 2016Assignee: EPISTAR CORPORATIONInventors: Chao Hsing Chen, Tsung Hsun Chiang, Chien Chih Liao, Wen Hung Chuang, Bo Jiun Hu, Tzu Yao Tseng, Jia Kuen Wang, Tsun Kai Ko, Chien Fu Shen, Kuan Yi Lee, Min Yen Tsai
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Patent number: D769831Type: GrantFiled: April 17, 2015Date of Patent: October 25, 2016Assignee: EPISTAR CORPORATIONInventors: Chao Hsing Chen, Tzu Yao Tseng, Min Yen Tsai, Bo Jiun Hu, Kuan Yi Lee, Jia Kuen Wang, Tsung Hsun Chiang, Chien Chih Liao, Wen Hung Chuang
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Patent number: D777693Type: GrantFiled: May 4, 2015Date of Patent: January 31, 2017Assignee: EPISTAR CORPORATIONInventors: Chao Hsing Chen, Tsung Hsun Chiang, Chien Chih Liao, Wen Hung Chuang, Min Yen Tsai, Bo Jiun Hu, Tzu Yao Tseng, Jia Kuen Wang, Tsun Kai Ko, Chien Fu Shen, Kuan Yi Lee
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Patent number: D824864Type: GrantFiled: December 22, 2016Date of Patent: August 7, 2018Assignee: EPISTAR CORPORATIONInventors: Chao Hsing Chen, Tsung Hsun Chiang, Chien Chih Liao, Wen Hung Chuang, Min Yen Tsai, Bo Jiun Hu, Tzu Yao Tseng, Jia Kuen Wang, Tsun Kai Ko, Chien Fu Shen, Kuan Yi Lee