Patents by Inventor Tzung-Lin Li
Tzung-Lin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10622348Abstract: A method for fabricating a protection device includes forming a doped well with a first-type impurity in a substrate. A first semiconductor terminal with a second-type impurity is formed on the doped well. A second semiconductor terminal with a second-type impurity is formed on the doped well separating from the first semiconductor terminal. The first semiconductor terminal is connected to a voltage level and a second semiconductor terminal is connected to a ground voltage.Type: GrantFiled: January 15, 2019Date of Patent: April 14, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Sheng-Huei Dai, Tzung-Lin Li
-
Publication number: 20190148356Abstract: A method for fabricating a protection device includes forming a doped well with a first-type impurity in a substrate. A first semiconductor terminal with a second-type impurity is formed on the doped well. A second semiconductor terminal with a second-type impurity is formed on the doped well separating from the first semiconductor terminal. The first semiconductor terminal is connected to a voltage level and a second semiconductor terminal is connected to a ground voltage.Type: ApplicationFiled: January 15, 2019Publication date: May 16, 2019Applicant: United Microelectronics Corp.Inventors: Sheng-Huei Dai, Tzung-Lin Li
-
Patent number: 10262986Abstract: A protection device as provided includes a doped well with a first-type impurity, formed in a substrate. A first semiconductor terminal with a second-type impurity is formed on the doped well. A second semiconductor terminal with a second-type impurity is formed on the doped well separating from the first semiconductor terminal. The first semiconductor terminal is connected to a voltage level and a second semiconductor terminal is connected to a ground voltage.Type: GrantFiled: June 13, 2017Date of Patent: April 16, 2019Assignee: United Microelectronics Corp.Inventors: Sheng-Huei Dai, Tzung-Lin Li
-
Publication number: 20180358351Abstract: A protection device as provided includes a doped well with a first-type impurity, formed in a substrate. A first semiconductor terminal with a second-type impurity is formed on the doped well. A second semiconductor terminal with a second-type impurity is formed on the doped well separating from the first semiconductor terminal. The first semiconductor terminal is connected to a voltage level and a second semiconductor terminal is connected to a ground voltage.Type: ApplicationFiled: June 13, 2017Publication date: December 13, 2018Applicant: United Microelectronics Corp.Inventors: Sheng-Huei Dai, Tzung-Lin Li
-
Patent number: 10062943Abstract: A method for fabricating microstrip line structure is disclosed. First, a substrate is provided, ground patterns are formed on the substrate, an interlayer dielectric (ILD) layer is formed on the ground patterns, contact plugs are formed in the ILD layer, a ground plate is formed on the ILD layer, and a signal line is formed on the ground plate. Preferably, the ground plate includes openings that are completely shielded by the ground patterns.Type: GrantFiled: September 10, 2016Date of Patent: August 28, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventor: Tzung-Lin Li
-
Publication number: 20180076500Abstract: A method for fabricating microstrip line structure is disclosed. First, a substrate is provided, ground patterns are formed on the substrate, an interlayer dielectric (ILD) layer is formed on the ground patterns, contact plugs are formed in the ILD layer, a ground plate is formed on the ILD layer, and a signal line is formed on the ground plate. Preferably, the ground plate includes openings that are completely shielded by the ground patterns.Type: ApplicationFiled: September 10, 2016Publication date: March 15, 2018Inventor: Tzung-Lin Li
-
Patent number: 9705173Abstract: A waveguide structure includes a signal line and two static lines. The signal line is disposed between the static lines in a first direction. The static lines and the signal line are disposed parallel to one another. Each static line includes a first conductive pattern, a second conductive pattern, and a third conductive pattern. The first conductive pattern and the signal line are disposed on an identical plane of a dielectric layer. A thickness of the first conductive pattern is substantially equal to a thickness of the signal line. The second conductive pattern is disposed on the first conductive pattern. A width of the first conductive pattern is larger than a width of the second conductive pattern in the first direction. The third conductive pattern is disposed on the second conductive pattern. A width of the third conductive pattern is larger than the width of the second conductive pattern.Type: GrantFiled: January 22, 2015Date of Patent: July 11, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Tzung-Lin Li, Chien-Yi Lee, Chieh-Pin Chang
-
Publication number: 20160197391Abstract: A waveguide structure includes a signal line and two static lines. The signal line is disposed between the static lines in a first direction. The static lines and the signal line are disposed parallel to one another. Each static line includes a first conductive pattern, a second conductive pattern, and a third conductive pattern. The first conductive pattern and the signal line are disposed on an identical plane of a dielectric layer. A thickness of the first conductive pattern is substantially equal to a thickness of the signal line. The second conductive pattern is disposed on the first conductive pattern. A width of the first conductive pattern is larger than a width of the second conductive pattern in the first direction. The third conductive pattern is disposed on the second conductive pattern. A width of the third conductive pattern is larger than the width of the second conductive pattern.Type: ApplicationFiled: January 22, 2015Publication date: July 7, 2016Inventors: Tzung-Lin Li, Chien-Yi Lee, Chieh-Pin Chang
-
Publication number: 20160126331Abstract: The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench and comprises a bottom portion and a side portion, wherein a ratio between a thickness of the bottom portion and a thickness of the side portion is between 2 and 5. The trench is filled with the metal layer. The present invention further provides a method of forming the metal gate structure.Type: ApplicationFiled: November 26, 2014Publication date: May 5, 2016Inventors: Chi-Ju Lee, Yao-Chang Wang, Nien-Ting Ho, Chi-Mao Hsu, Kuan-Cheng Su, Main-Gwo Chen, Hsiao-Kwang Yang, Fang-Hong Yao, Sheng-Huei Dai, Tzung-Lin Li
-
Patent number: 9331161Abstract: The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench and comprises a bottom portion and a side portion, wherein a ratio between a thickness of the bottom portion and a thickness of the side portion is between 2 and 5. The trench is filled with the metal layer. The present invention further provides a method of forming the metal gate structure.Type: GrantFiled: November 26, 2014Date of Patent: May 3, 2016Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chi-Ju Lee, Yao-Chang Wang, Nien-Ting Ho, Chi-Mao Hsu, Kuan-Cheng Su, Main-Gwo Chen, Hsiao-Kwang Yang, Fang-Hong Yao, Sheng-Huei Dai, Tzung-Lin Li
-
Patent number: 8929387Abstract: A cognitive radio communication network is provided. The cognitive radio communication network includes a cloud and a wireless communication network. A communication system accessing to a backbone network is provided. The communication system includes a cloud and a wireless communication network connected to the cloud, and having a plurality of cognitive radio access points and a plurality of users, wherein the cloud performs the functions of network management, power control, and radio resource management.Type: GrantFiled: February 28, 2013Date of Patent: January 6, 2015Assignee: National Chiao Tung UniversityInventors: Sau-Hsuan Wu, Hsi-Lu Chao, Chun-Hsien Ko, Shang-Ru Mo, Chang-Ting Jiang, Tzung-Lin Li, Chung-Chieh Cheng, Chiau-Feng Liang
-
Patent number: 8912844Abstract: The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.Type: GrantFiled: October 9, 2012Date of Patent: December 16, 2014Assignee: United Microelectronics Corp.Inventors: Tzung-Lin Li, Chun-Chang Wu, Chih-Yu Tseng
-
Publication number: 20140241259Abstract: A cognitive radio communication network is provided. The cognitive radio communication network includes a cloud and a wireless communication network. A communication system accessing to a backbone network is provided. The communication system includes a cloud and a wireless communication network connected to the cloud, and having a plurality of cognitive radio access points and a plurality of users, wherein the cloud performs the functions of network management, power control, and radio resource management.Type: ApplicationFiled: February 28, 2013Publication date: August 28, 2014Applicant: National Chiao Tung UniversityInventors: Sau-Hsuan WU, Hsi-Lu Chao, Chun-Hsien Ko, Shang-Ru Mo, Chang-Ting Jiang, Tzung-Lin Li, Chung-Chieh Cheng, Chiau-Feng Liang
-
Publication number: 20140097890Abstract: The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.Type: ApplicationFiled: October 9, 2012Publication date: April 10, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Tzung-Lin Li, Chun-Chang Wu, Chih-Yu Tseng
-
Patent number: 8507987Abstract: A radio frequency (RF) device that can achieve high frequency response while maintaining high output impedance and high breakdown voltage includes a substrate, a gate, at least a dummy gate, at least a doped region, a source region and a drain region. The substrate includes a well of first type and a well of second type. The well of second type is adjacent to the well of first type.Type: GrantFiled: September 21, 2009Date of Patent: August 13, 2013Assignee: United Microelectronics Corp.Inventors: Sheng-Yi Huang, Cheng-Chou Hung, Tzung-Lin Li, Chin-Lan Tseng, Victor-Chiang Liang, Chih-Yu Tseng
-
Patent number: 8357988Abstract: A die seal ring disposed outside of a die region of a semiconductor substrate is disclosed. The die seal ring includes a first isolation structure, a second isolation structure, and at least one third isolation structure disposed between the first isolation structure and the second isolation structure; a plurality of first regions between the first isolation structure, the second isolation structure and the third isolation structure; a second region under the first region and the third isolation structure; and a third region under the first isolation structure.Type: GrantFiled: February 6, 2009Date of Patent: January 22, 2013Assignee: United Microelectronics Corp.Inventors: Cheng-Chou Hung, Victor-Chiang Liang, Jui-Meng Jao, Cheng-Hung Li, Sheng-Yi Huang, Tzung-Lin Li, Huai-Wen Zhang, Chih-Yu Tseng
-
Publication number: 20110068415Abstract: A radio frequency (RF) device that can achieve high frequency response while maintaining high output impedance and high breakdown voltage includes a substrate, a gate, at least a dummy gate, at least a doped region, a source region and a drain region. The substrate includes a well of first type and a well of second type. The well of second type is adjacent to the well of first type.Type: ApplicationFiled: September 21, 2009Publication date: March 24, 2011Inventors: Sheng-Yi Huang, Cheng-Chou Hung, Tzung-Lin Li, Chin-Lan Tseng, Victor-Chiang Liang, Chih-Yu Tseng
-
Publication number: 20100200947Abstract: A die seal ring disposed outside of a die region of a semiconductor substrate is disclosed. The die seal ring includes a first isolation structure, a second isolation structure, and at least one third isolation structure disposed between the first isolation structure and the second isolation structure; a plurality of first regions between the first isolation structure, the second isolation structure and the third isolation structure; a second region under the first region and the third isolation structure; and a third region under the first isolation structure.Type: ApplicationFiled: February 6, 2009Publication date: August 12, 2010Inventors: Cheng-Chou Hung, Victor-Chiang Liang, Jui-Meng Jao, Cheng-Hung Li, Sheng-Yi Huang, Tzung-Lin Li, Huai-Wen Zhang, Chih-Yu Tseng
-
Publication number: 20100109080Abstract: A pseudo-drain MOS transistor is disclosed. The transistor includes a semiconductor substrate; a gate structure disposed on the semiconductor substrate; a source, a pseudo-drain, a drain, and a shallow trench isolation disposed in the semiconductor substrate, a p-well disposed in the semiconductor substrate and under the source and the gate structure; and an n-well disposed under the drain. The source and the pseudo-drain are disposed adjacent to two sides of the gate structure and the shallow trench isolation is disposed between the pseudo-drain and the drain, and the n-well is extended toward the pseudo-drain while not reaching the area below the gate structure.Type: ApplicationFiled: November 5, 2008Publication date: May 6, 2010Inventors: Sheng-Yi Huang, Cheng-Chou Hung, Tzung-Lin Li, Chin-Lan Tseng, Victor-Chiang Liang, Chih-Yu Tseng
-
Patent number: 7018883Abstract: Methods of manufacturing transistor gate electrodes including, in one embodiment, forming a metal layer over first and second regions of a substrate, wherein the first and second regions have different first and second dopant types, respectively. A semiconductor layer is formed over at least a portion of the second region. The metal layer is heated to form a metal gate electrode over the first region, and the metal layer and the semiconductor layer are collectively heated to form a composite metal gate electrode over the second region.Type: GrantFiled: May 5, 2004Date of Patent: March 28, 2006Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hao Wang, Tzung-Lin Li, Yen-Ping Wang, Chun-Yen Chang