Patents by Inventor Tzung-Lin Li

Tzung-Lin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual work function gate electrodes
    Publication number: 20050250271
    Abstract: Methods of manufacturing transistor gate electrodes including, in one embodiment, forming a metal layer over first and second regions of a substrate, wherein the first and second regions have different first and second dopant types, respectively. A semiconductor layer is formed over at least a portion of the second region. The metal layer is heated to form a metal gate electrode over the first region, and the metal layer and the semiconductor layer are collectively heated to form a composite metal gate electrode over the second region.
    Type: Application
    Filed: May 5, 2004
    Publication date: November 10, 2005
    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Chih-Hao Wang, Tzung-Lin Li, Yen-Ping Wang, Chun-Yen Chang