Patents by Inventor Tzung-Shiun YEH
Tzung-Shiun YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11810943Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: September 1, 2022Date of Patent: November 7, 2023Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Patent number: 11705539Abstract: An optoelectronic device includes a semiconductor stack including a top surface; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing the top surface of the semiconductor stack; a transparent conductive layer, covering the top surface of the semiconductor stack, including a second opening overlapping the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.Type: GrantFiled: December 29, 2020Date of Patent: July 18, 2023Assignee: EPISTAR CORPORATIONInventors: Tzung-Shiun Yeh, Li-Ming Chang, Chien-Fu Shen
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Publication number: 20230005984Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: September 1, 2022Publication date: January 5, 2023Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung- Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Patent number: 11437427Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: January 23, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Patent number: 11430934Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.Type: GrantFiled: August 5, 2020Date of Patent: August 30, 2022Assignee: EPISTAR CORPORATIONInventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
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Publication number: 20220173272Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.Type: ApplicationFiled: February 17, 2022Publication date: June 2, 2022Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Wen-Hsiang LIN, Pei-Chi CHIANG, Yi-Wen KU
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Patent number: 11282982Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.Type: GrantFiled: January 22, 2020Date of Patent: March 22, 2022Assignee: EPISTAR CORPORATIONInventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Wen-Hsiang Lin, Pei-Chi Chiang, Yi-Wen Ku
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Publication number: 20210119084Abstract: An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, covering the current blocking region and/or a surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.Type: ApplicationFiled: December 29, 2020Publication date: April 22, 2021Inventors: Tzung-Shiun YEH, Li-Ming CHANG, Chien-Fu SHEN
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Publication number: 20210036049Abstract: A light-emitting diode, includes a substrate; a semiconductor stack formed on the substrate; a first current blocking patterned structure and a second current blocking patterned structure formed on the semiconductor stack and separated from each other; and a plurality of electrodes formed on the semiconductor stack and electrically connected to the semiconductor stack; wherein the first current blocking patterned structure is overlapped with one of the plurality of electrodes and the second current blocking patterned structure is not overlapped with the plurality of electrodes.Type: ApplicationFiled: July 30, 2020Publication date: February 4, 2021Inventors: Hsin Ying WANG, Tzung Shiun YEH, Yu Ling LIN, Bo Jiun HU
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Patent number: 10910520Abstract: An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed on the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.Type: GrantFiled: June 4, 2020Date of Patent: February 2, 2021Assignee: EPISTAR CORPORATIONInventors: Tzung-Shiun Yeh, Li-Ming Chang, Chien-Fu Shen
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Publication number: 20210020817Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.Type: ApplicationFiled: August 5, 2020Publication date: January 21, 2021Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
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Publication number: 20200303590Abstract: An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.Type: ApplicationFiled: June 4, 2020Publication date: September 24, 2020Inventors: Tzung-Shiun YEH, Li-Ming CHANG, Chien-Fu SHEN
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Patent number: 10784427Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.Type: GrantFiled: September 23, 2019Date of Patent: September 22, 2020Assignee: EPISTAR CORPORATIONInventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
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Publication number: 20200243598Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: January 23, 2020Publication date: July 30, 2020Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung-Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Publication number: 20200243714Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.Type: ApplicationFiled: January 22, 2020Publication date: July 30, 2020Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Wen-Hsiang LIN, Pei-Chi CHIANG, Yi-Wen KU
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Patent number: 10707376Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes transparent insulated material; a transparent conductive layer, formed on the current blocking region and/or a surface of the semiconductor stack; a first opening, formed in the first pad portion, wherein in a top view, the first opening includes elongated shape; and a first electrode, including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening.Type: GrantFiled: October 3, 2019Date of Patent: July 7, 2020Assignee: EPISTAR CORPORATIONInventors: Tzung-Shiun Yeh, Li-Ming Chang, Chien-Fu Shen
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Publication number: 20200035863Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes transparent insulated material; a transparent conductive layer, formed on the current blocking region and/or a surface of the semiconductor stack; a first opening, formed in the first pad portion, wherein in a top view, the first opening includes elongated shape; and a first electrode, including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening.Type: ApplicationFiled: October 3, 2019Publication date: January 30, 2020Inventors: Tzung-Shiun YEH, Li-Ming CHANG, Chien-Fu SHEN
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Publication number: 20200020839Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.Type: ApplicationFiled: September 23, 2019Publication date: January 16, 2020Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
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Patent number: 10505092Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.Type: GrantFiled: January 18, 2018Date of Patent: December 10, 2019Assignee: EPISTAR CORPORATIONInventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
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Patent number: 10475962Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion, wherein in a top view, the first opening comprises an elongated shape defined by the first pad portion; a transparent conductive layer formed on the current blocking region and/or a surface of the semiconductor stack; and a first electrode formed above the current blocking region; wherein the transparent conductive layer comprises a second opening to expose the first opening, and the first electrode electrically connects the semiconductor stack through the first opening and the second opening.Type: GrantFiled: February 6, 2018Date of Patent: November 12, 2019Assignee: EPISTAR CORPORATIONInventors: Tzung-Shiun Yeh, Li-Ming Chang, Chien-Fu Shen